Search Results - "Yamaguchi, Hizuru"

Copper Wires for High Speed Logic LSI Prepared by Low Pressure Long Throw Sputtering Method by Saito, Tatsuyuki, Hashimoto, Takashi, Ohashi, Naofumi, Fujiwara, Tsuyoshi, Yamaguchi, Hizuru

“…Copper sputtering method for fabrication of high performance logic LSI was studied. Extension of target to substrate distance is effective to improve step…”
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Light Emission Analysis of Dielectric Breakdown in Stressed Damascene Copper Interconnection by Takeda, Ken-ichi, Hinode, Kenji, Noguchi, Junji, Yamaguchi, Hizuru

“…Visible light emission observed in biased comb-type capacitors with a copper (Cu) damascene structure appears to be caused by electroluminescence. Photon…”
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Effect of NH3-plasma treatment and CMP modification on TDDB improvement in Cu metallization by Noguchi, J, Ohashi, N, Jimbo, T, Yamaguchi, H, Takeda, K.-i, Hinode, K

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Dependence of Time-Dependent Dielectric Breakdown Lifetime on NH 3 -Plasma Treatment in Cu Interconnects by Noguchi, Junji, Ohashi, Naofumi, Yamaguchi, Hizuru, Takeda, Ken-ichi

“…The time-dependent dielectric breakdown (TDDB) between adjacent Cu wires was investigated. TDDB lifetime strongly depends on the conditions of the chemical…”
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Cu-ion-migration phenomena and its influence on TDDB lifetime in Cu metallization by Noguchi, J., Miura, N., Kubo, M., Tamaru, T., Yamaguchi, H., Hamada, N., Makabe, K., Tsuneda, R., Takeda, K.

“…Time-dependent dielectric breakdown (TDDB) of sub-half-micron Cu interconnects was investigated with regard to the waiting time between Cu-CMP and barrier…”
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Molecular dynamics analysis of reflow process of sputtered aluminum films by Saito, Y., Hirasawa, S., Saito, T., Nezu, H., Yamaguchi, H., Owada, N.

“…It is important that aluminum films fill the grooves on silicon substrates if high-density devices are to be produced. In this paper, we calculate the changes…”
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Enhanced dielectric breakdown lifetime of the copper/silicon nitride/silicon dioxide structure by Takeda, K.-I., Hinode, K., Oodake, I., Oohashi, N., Yamaguchi, H.

“…Time-dependent dielectric breakdown (TDDB) of MIS and MIM capacitors with Cu electrodes is investigated. The dielectric breakdown lifetime strongly depends on…”
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