Search Results - "Yamaguchi, Atsushi A."

Growth and strain characterization of high quality GaN crystal by HVPE by Geng, Huiyuan, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Atsushi Yamaguchi, A., Usui, Akira

“…Freestanding GaN crystals were fabricated by hydride vapor phase epitaxy using a random-islands facet-initiated epitaxial overgrowth technique. In this method,…”
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Theoretical analysis of optical polarization properties in semipolar and nonpolar InGaN quantum wells for precise determination of valence-band parameters in InGaN alloy material by Sakai, Shigeta, Yamaguchi, Atsushi A.

“…In order to make a precise determination of InGaN material parameters (valence‐band A parameters and deformation potentials), reported experimental data on…”
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Surface Morphologies and Optical Properties of Si Doped InGaN Multi-Quantum-Well Grown on Vicinal Bulk GaN(0001) Substrates by Sasaoka, Chiaki, Miyasaka, Fumito, Koi, Tomoaki, Kobayashi, Masahide, Murase, Yasuhiro, Ando, Yuji, Yamaguchi, Atsushi A

“…Morphological and optical properties of Si doped In 0.07 Ga 0.93 N multi-quantum-well (MQW) were studied on a vicinal bulk GaN(0001) substrate with low…”
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Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurements by utilizing Helmholtz resonance by Tosa, Hiroki, Mori-Tamamura, Keito, Yamaguchi, Atsushi A.

“…Accurate estimation of internal quantum efficiency (IQE) is essential for a comprehensive understanding of carrier dynamics in light-emitting materials in…”
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Gain Anisotropy Analysis in Green Semipolar InGaN Quantum Wells with Inhomogeneous Broadening by Kojima, Kazunobu, Yamaguchi, Atsushi A, Funato, Mitsuru, Kawakami, Yoichi, Noda, Susumu

“…Polarization switching phenomena in semipolar ($11\bar{2}2$)-oriented InGaN quantum wells (QWs) were theoretically investigated by a newly formulated model…”
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Photoluminescence Study of Plasma-Induced Damage of GaInN Single Quantum Well by Izumi, Shouichiro, Minami, Masaki, Kamada, Michiru, Tatsumi, Tetsuya, Yamaguchi, Atsushi A, Ishikawa, Kenji, Hori, Masaru, Tomiya, Shigetaka

“…Plasma-induced damage (PID) due to Cl 2 /SiCl 4 /Ar plasma etching of the GaN capping layer (CAP)/GaInN single quantum well (SQW)/GaN structure was…”
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Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage by Mori-Tamamura, Keito, Morimoto, Yuya, Yamaguchi, Atsushi A., Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tomiya, Shigetaka

“…In this study, we have separately evaluated the radiative and non-radiative recombination lifetimes for InGaN quantum well (QW) samples with different amounts…”
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Evaluation of radiative and nonradiative recombination lifetimes in c-plane InGaN quantum wells with emission colors ranging from blue to red by Mori-Tamamura, Keito, Morimoto, Yuya, Yamaguchi, Atsushi A., Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tomiya, Shigetaka

“…In this study, we investigate In composition and the carrier density dependences of radiative and nonradiative recombination lifetimes for a series of c -plane…”
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Precise determination of deformation potentials in InGaN alloy material in semipolar and nonpolar InGaN quantum wells by Sakai, Shigeta, Kojima, Kazunobu, Chichibu, Shigefusa F., Yamaguchi, Atsushi A.

“…Deformation potentials of InGaN have been precisely determined in order to make a reliable prediction of optical gain characteristics in semipolar and nonpolar…”
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Enhancement of optical gain by controlling waveguide modes in semipolar InGaN quantum well laser diodes by Sakai, Shigeta, Matsuura, Keigo, Yamaguchi, Atsushi A.

“…Waveguide modes in semipolar InGaN quantum‐well (QW) laser diodes (LDs) with cleaved‐facet cavity mirrors have been theoretically investigated using a 4 × 4…”
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InGaN quantum wells with improved photoluminescence properties through strain-controlled modification of the InGaN underlayer by Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tasai, Kunihiko, Yamaguchi, Atsushi A., Tomiya, Shigetaka

“…The effect of internal strain on the luminescence properties of an InGaN single quantum well (SQW) was investigated as a function of modification via an…”
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Impact of potential fluctuation on temperature dependence of optical gain characteristics in InGaN quantum-well laser diodes by Oshima, Itsuki, Ikeda, Yuma, Sakai, Shigeta, Yamaguchi, Atsushi A., Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tomiya, Shigetaka

“…The effects of the potential fluctuation (alloy compositional fluctuation and/or well-width fluctuation) in InGaN quantum wells (QWs) on the characteristics of…”
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Residual Strain Evaluation by Cross-Sectional Micro-Reflectance Spectroscopy of Freestanding GaN Grown by Hydride Vapor Phase Epitaxy by Geng, Huiyuan, Yamaguchi, A Atsushi, Sunakawa, Haruo, Sumi, Norihiko, Yamamoto, Kazutomi, Usui, Akira

“…Distributions of residual stresses in the cross-section of as-grown $c$-plane freestanding GaN substrates grown by hydride vapor phase epitaxy (HVPE) were…”
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Experimental studies and model analysis on potential fluctuation in InGaN quantum-well layers by Fujita, Takashi, Sakai, Shigeta, Ikeda, Yuma, Yamaguchi, Atsushi A., Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tomiya, Shigetaka

“…The bandgap energy of InGaN alloy materials can be controlled by changing their alloy composition. Since the compositional fluctuation in the InGaN quantum…”
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Anisotropic Optical Matrix Elements in Strained GaN Quantum Wells on Semipolar and Nonpolar Substrates by Yamaguchi, A. Atsushi

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All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation by Ishii, Ryota, Kaneta, Akio, Funato, Mitsuru, Kawakami, Yoichi, Yamaguchi, Atsushi A.

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A simple theoretical approach to analyze polarization properties in semipolar and nonpolar InGaN quantum wells by Yamaguchi, Atsushi A., Kojima, Kazunobu

“…By using a simple theoretical approach, the previously reported experimental results of the polarization properties in semipolar and nonpolar InGaN quantum…”
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Theoretical investigation on polarization control of semipolar-oriented InGaN quantum-well emission using (Al)InGaN alloy substrates by Yamaguchi, A. Atsushi

“…The polarization properties of InGaN quantum wells on semipolar AlInGaN alloy substrates are calculated numerically using a 6 × 6 ⋅ k ⋅ p Hamiltonian. It is…”
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Absolute evaluation of internal and external quantum efficiencies and light extraction efficiency in InGaN single quantum wells by simultaneous photoacoustic and photoluminescence measurements combined with integrating-sphere method by Mori-Tamamura, Keito, Takahashi, Yuchi, Sakai, Shigeta, Morimoto, Yuya, Hirama, Junji, Yamaguchi, Atsushi A., Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tomiya, Shigetaka

“…ABSTRACTSeparated evaluation of factors in the external quantum efficiency (EQE) is important in order to improve the characteristics of semiconductors optical…”
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Direct Measurement of Internal and External Quantum Efficiency in InGaN Quantum-Well Active Layers by Mori, Keito, Takahashi, Yuchi, Sakai, Shigeta, Morimoto, Yuya, Yamaguchi, Atsushi A., Kusanagi, Susumu, Kanitani, Yuya, Kudo, Yoshihiro, Tomiya, Shigetaka

“…Internal quantum efficiency (IQE) in InGaN quantum-well active layers have been estimated by simultaneous photoacoustic and photoluminescence measurements…”
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