Search Results - "Yamada, W.E."

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  1. 1
    Characteristics of GaAs heterojunction FETs (HFETs) and source follower FET logic (SFFL) inverters exoposed to high energy neutrons

    Characteristics of GaAs heterojunction FETs (HFETs) and source follower FET logic (SFFL) inverters exoposed to high energy neutrons by Janousek, B.K., Krantz, R.J., Bloss, W.L., Yamada, W.E., Brown, S., Remke, R.L., Witmer, S.

    “…This paper reports GaAs heterojunction field effect transistors (HFETs), and inverters and ring oscillators comprising HFETs exposed to neutron fluences of 5…”
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  2. 2
    Characteristics of GaAs buffered FET logic (BFL) MESFETs and inverters exposed to high-energy neutrons

    Characteristics of GaAs buffered FET logic (BFL) MESFETs and inverters exposed to high-energy neutrons by Rosenbluth, M., Bloss, W.L., Yamada, W.E., Janousek, B.K.

    Published in IEEE transactions on nuclear science (01-02-1991)
    “…A systematic investigation of the effects of high-energy neutrons on GaAs metal-semiconductor field-effect transistors (MESFETs) and buffered FET logic (BFL)…”
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  3. 3
    Characteristics of GaAs heterojunction FETs (HFETs) and source follower FET logic (SFFL) inverters exposed to high energy neutrons

    Characteristics of GaAs heterojunction FETs (HFETs) and source follower FET logic (SFFL) inverters exposed to high energy neutrons by Janousek, B.K., Krantz, R.J., Bloss, W.L., Yamada, W.E., Brown, S., Remke, R.L., Witmer, S.

    Published in IEEE transactions on nuclear science (01-12-1989)
    “…GaAs heterojunction field-effect transistors (HFETs) and inverters and ring oscillators comprising HFETs have been exposed to neutron fluences of 5*10/sup 13/…”
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  4. 4
    Characteristics of GaAs DCFL MESFET's and inverters exposed to high-energy neutrons

    Characteristics of GaAs DCFL MESFET's and inverters exposed to high-energy neutrons by Bloss, W.L., Yamada, W.E., Rosenbluth, M.L., Janousek, B.K.

    “…A systematic investigation of the effects of high-energy neutrons on GaAs metal-semiconductor field-effect transistors (MESFETs) and direct-coupled FET logic…”
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  5. 5
    Characteristics of GaAs MESFET inverters exposed to high energy neutrons

    Characteristics of GaAs MESFET inverters exposed to high energy neutrons by Bloss, W.L., Yamada, W.E., Young, A.M., Janousek, B.K.

    Published in IEEE transactions on nuclear science (01-10-1988)
    “…GaAs MESFET circuits were exposed to high-energy neutrons with fluences ranging from 1*10/sup 14/ n/cm/sup 2/ to 2*10/sup 15/ n/cm/sup 2/. The reflections of…”
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  6. 6
    Neutron radiation effects in GaAs junction field effect transistors

    Neutron radiation effects in GaAs junction field effect transistors by Janousek, B.K., Yamada, W.E., Bloss, W.L.

    Published in IEEE transactions on nuclear science (01-12-1988)
    “…The effect of high-energy neutrons on GaAs junction field-effect transistors (JFETs) was investigated. The device threshold voltage, transconductance, and…”
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