Search Results - "Yakovlev, Yu.P"

Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution by MOISEEV, K. D, ROMANOV, V. V, VORONINA, T. I, LAGUNOVA, T. S, MIKHAILOVA, M. P, YAKOVLEV, Yu. P

“…Ternary GaAsxSb1-x solid solutions in the composition range 0.05 < x < 0.35 have been grown on InAs(1 0 0) substrates by the MOVPE method. The…”
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A Hydrogen Sensor Based on Pd/InP Structures by Shutaev, V. A., Grebenshchikova, E. A., Sidorov, V. G., Yakovlev, Yu. P.

“…Тhe development of a photoelectrical hydrogen sensor without sensor element heating is presented. For the sensitive element of the hydrogen sensor the Pd/n-InP…”
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Auger Recombination and Amplified Luminescence in InAsSb/InAsSbP Leds at 10–60 K by Kabanau, D. M., Lebiadok, Y. V., Yakovlev, Yu. P.

“…The Varshni parameters of the temperature dependence of the bandgap energy in the range 10–313 K and the temperature dependence of the spin–orbit splitting…”
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Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers by Danilov, L. V., Petukhov, A. A., Mikhailova, M. P., Zegrya, G. G., Ivanov, E. V., Yakovlev, Yu. P.

“…The electroluminescent properties of a light-emitting diode n -GaSb/ n -InGaAsSb/ p -AlGaAsSb heterostructure with high potential barriers are studied in the…”
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Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen medium by Imenkov, A. N., Grebenshchikova, E. A., Shutaev, V. A., Ospennikov, A. M., Sherstnev, V. V., Yakovlev, Yu. P.

“…Pd–oxide–InP (MOS) structures are fabricated, and their physical and photoelectric properties in a hydrogen atmosphere are investigated. It is established that…”
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Collective modes in coupled semiconductor disk lasers in the case of whispering-gallery modes by Royz, M. A., Baranov, A. N., Imenkov, A. N., Burenina, D. S., Pivovarova, A. A., Monakhov, A. M., Grebenshchikova, E. A., Yakovlev, Yu. P.

“…Samples of coupled semiconductor disk laser based on quantum-dimensional GaInAsSb/AlGaAsSb nanoheterostructures (emission wavelength of λ ≈ 2.28 μm) operating…”
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Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range by Kunitsyna, E. V., Grebenshchikova, E. A., Konovalov, G. G., Andreev, I. A., Yakovlev, Yu. P.

“…A new method is used to raise the spectral sensitivity of photodiodes based on GaSb/GaInAsSb/GaAlAsSb heterostructures for the spectral range 1.1–2.4 μm. It is…”
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Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers by Kalinina, K. V., Mikhailova, M. P., Zhurtanov, B. E., Stoyanov, N. D., Yakovlev, Yu. P.

“…The electroluminescence in isotype and anisotype light-emitting diode heterostructures grown by the method of liquid-phase epitaxy with large conduction-band…”
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Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide by Bezyazychnaya, T. V., Bogdanovich, M. V., Kabanov, V. V., Kabanau, D. M., Lebiadok, Y. V., Parashchuk, V. V., Ryabtsev, A. G., Ryabtsev, G. I., Shpak, P. V., Shchemelev, M. A., Andreev, I. A., Kunitsyna, E. V., Sherstnev, V. V., Yakovlev, Yu. P.

“…The spectral characteristics of light emitting diodes based on a InAs/InAsSb/InAsSbP heterostructure, which emit in a wavelength range of 3.5–4.5 µm, are…”
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Wet sulfur passivation of GaSb(1 0 0) surface for optoelectronic applications by Kunitsyna, E.V., L’vova, T.V., Dunaevskii, M.S., Terent’ev, Ya.V., Semenov, A.N., Solov’ev, V.A., Meltser, B.Ya, Ivanov, S.V., Yakovlev, Yu.P.

“…A comparative analysis of the properties of the non-passivated and S-passivated GaSb(1 0 0) surfaces has been performed through PL, AFM and RHEED…”
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High-power LEDs based on InGaAsP/InP heterostructures by Rakovics, V., Imenkov, A. N., Sherstnev, V. V., Serebrennikova, O. Yu, Il’inskaya, N. D., Yakovlev, Yu. P.

“…High-power light-emitting diodes (LEDs) with mesa diameters of 100, 200, and 300 μm are developed on the basis of InGaAsP/InP heterostructures. The mesas are…”
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Type II GaAs x Sb 1− x /InAs ( x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution by Moiseev, K.D., Romanov, V.V., Voronina, T.I., Lagunova, T.S., Mikhailova, M.P., Yakovlev, Yu.P.

“…Ternary GaAs x Sb 1− x solid solutions in the composition range 0.05< x<0.35 have been grown on InAs(1 0 0) substrates by the MOVPE method. The…”
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Narrow gap III–V materials for infrared photodiodes and thermophotovoltaic cells by Kunitsyna, E.V., Andreev, I.A., Sherstnev, V.V., L’vova, T.V., Mikhailova, M.P., Yakovlev, Yu.P., Ahmetoglu (Afrailov), M., Kaynak, G., Gurler, O.

“…The paper describes liquid phase epitaxial growth and characterization of the GaSb- and InAs-related materials for the photodiodes and thermophotovoltaic…”
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Electrical and optical characteristics of the InAs/InAs 0.7Sb 0.1P 0.2 single heterojunction photodiodes for the spectral range 1.6–3.5 μm by Ahmetoglu (Afrailov), M., Andreev, I.A., Kunitsyna, E.V., Moiseev, K.D., Mikhailova, M.P., Yakovlev, Yu.P.

“…► In this study presented the results of dark current analysis InAs based photodiodes were studied in several temperatures. ► The results shows that, at low…”
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Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application by Ahmetoglu (Afrailov), M., Kucur, B., Andreev, I.A., Kunitsyna, E.V., Mikhailova, M.P., Yakovlev, Yu.P.

“…The electrical end optical characteristics of a type II double heterojunction (DH) in the GaSb/GaInAsSb/GaAlAsSb system with staggered band alignment were…”
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Electrical and optical characteristics of the InAs/InAs0.7Sb0.1P0.2 single heterojunction photodiodes for the spectral range 1.6–3.5μm by Ahmetoglu (Afrailov), M., Andreev, I.A., Kunitsyna, E.V., Moiseev, K.D., Mikhailova, M.P., Yakovlev, Yu.P.

“…The electrical end optical characteristics of InAs/InAs0.7Sb0.1P0.2 heterojunctions were studied. The dark current mechanisms in the heterostructures were…”
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InAsSb/InAsSbP double heterostructure lasers for 3–4 μm spectral range by Astakhova, A.P., Imenkov, A.N., Danilova, T.N., Sherstnev, V.V., Yakovlev, Yu.P.

“…InAsSb/InAsSbP double heterostructure diode lasers for the spectral range of 3–4 μm grown by liquid phase epitaxy have been investigated. The laser tuning was…”
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Portable optical water-and-oil analyzer based on a mid-IR (1.6–2.4 μm) optron consisting of an LED array and a wideband photodiode by Kalinina, K. V., Molchanov, S. S., Stoyanov, N. D., Astakhova, A. P., Salikhov, Kh. M., Yakovlev, Yu. P.

“…An optical method for measuring the water and oil content using mid-IR (1.6–2.4 μm) LEDs and a wideband photodiode is suggested for the first time. This method…”
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Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface by Moiseev, K.D., Mikhailova, M.P., Yakovlev, Yu.P.

“…A new physical approach for the design of mid-IR lasers operating at 3– 5 μm based on type II heterojunctions with effective electron–hole confinement owing to…”
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Growth of Ga 1− xIn xAs ySb 1− y solid solutions from the five-component Ga–In–As–Sb–Pb melt by liquid phase epitaxy by Kunitsyna, E.V, Andreev, I.A, Charykov, N.A, Solov'ev, Yu.V, Yakovlev, Yu.P

“…Gallium antimonide (GaSb) and its solid solutions are widely used in optoelectronic devices for the ecologically important spectral range 2–5 μm. In this paper…”
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