Search Results - "Yaita, Junya"

Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC/Si (111) substrate by Suto, Takeru, Yaita, Junya, Iwasaki, Takayuki, Hatano, Mutsuko

“…We report the synthesis of highly oriented diamond (HOD) (111) films on 3C-SiC/Si (111) substrates. Bias-enhanced nucleation (BEN) is a key process for the…”
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Characterization of Schottky Barrier Diodes on Heteroepitaxial Diamond on 3C-SiC/Si Substrates by Murooka, Takuya, Hatano, Mutsuko, Yaita, Junya, Makino, Toshiharu, Ogura, Masahiko, Kato, Hiromitsu, Yamasaki, Satoshi, Natal, Meralys, Saddow, Stephen E., Iwasaki, Takayuki

“…We demonstrated and characterized Schottky barrier diodes (SBDs) fabricated on heteroepitaxial diamond films grown onto 3C-SiC/Si substrates. SBDs showed clear…”
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24.4 W/mm X band GaN HEMTs on AlN substrates with the LPCVD grown high breakdown field SiNx layer by Kotani, Junji, Yaita, Junya, Homma, Kenji, Ozaki, Shirou, Yamada, Atsushi, Sato, Masaru, Ohki, Toshihiro, Nakamura, Norikazu

“…This paper reports on an AlGaN/GaN high-electron-mobility transistor (HEMT) on free-standing AlN substrates with a record-high output power density of 24.4…”
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In situ bias current monitoring of nucleation for epitaxial diamonds on 3C-SiC/Si substrates by Yaita, Junya, Suto, Takeru, Natal, Meralys-Reyes, Saddow, Stephen E., Hatano, Mutsuko, Iwasaki, Takayuki

“…Heteroepitaxial diamond on Si substrates can offer large-area, low-cost diamond wafers for many practical applications. Bias-enhanced nucleation (BEN) has been…”
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600 V Diamond Junction Field-Effect Transistors Operated at 200 by Iwasaki, Takayuki, Yaita, Junya, Kato, Hiromitsu, Makino, Toshiharu, Ogura, Masahiko, Takeuchi, Daisuke, Okushi, Hideyo, Yamasaki, Satoshi, Hatano, Mutsuko

“…Blocking characteristics of diamond junction field-effect transistors were evaluated at room temperature (RT) and 200 ° C. A high source-drain bias (breakdown…”
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Growth of microcrystalline diamond films after fabrication of GaN high-electron-mobility transistors for effective heat dissipation by Yaita, Junya, Yamada, Atsushi, Kotani, Junji

“…Diamond films were grown on GaN high-electron mobility transistors (HEMTs) to improve thermal dissipation. We observed the temperature reduction in GaN HEMTs…”
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Enhancement of two-dimensional electron gas mobility using strain reduced AlGaN barriers grown by metalorganic vapor phase epitaxy under nitrogen atmosphere by Yamada, Atsushi, Yaita, Junya, Kotani, Junji

“…Abstract We demonstrated high-electron-mobility transistors (HEMTs) with enhanced two-dimensional electron gas (2DEG) mobility using a low-strain AlGaN barrier…”
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Low-sheet-resistance high-electron-mobility transistor structures with strain-controlled high-Al-composition AlGaN barrier grown by MOVPE by Yamada, Atsushi, Yaita, Junya, Nakamura, Norikazu, Kotani, Junji

“…•Low temperature growth with N2 carrier gas reduces strain in an AlGaN barrier.•Reduction of strain in the AlGaN barrier improves electron…”
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Improved Channel Electron Mobility Through Electric Field Reduction in GaN Quantum-Well Double-Heterostructures by Yaita, Junya, Fukuda, Koichi, Yamada, Atsushi, Iwasaki, Takuya, Nakaharai, Shu, Kotani, Junji

“…To improve the electron mobility of quantum well (QW) gallium nitride (GaN) high electron mobility transistors (HEMT), we investigated QW and conventional…”
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Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment by Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Minoura, Yuichi, Ohki, Toshihiro, Okamoto, Naoya, Nakamura, Norikazu, Kotani, Junji

“…Herein, Al2O3/InAlGaN/GaN metal–insulator–semiconductor high‐electron‐mobility transistors (MIS‐HEMTs) using H2O vapor pretreatment to decrease the amount of…”
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A Poisson-Schrodinger and cellular automaton coupled approach for two-dimensional electron gas transport modeling of GaN-based high mobility electron transistors by Fukuda, Koichi, Hattori, Junichi, Asai, Hidehiro, Yaita, Junya, Kotani, Junji

“…We propose the modeling of electron transport in GaN-based high electron mobility transistors (HEMTs) by combining the Poisson-Schrodinger method and the…”
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Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al 2 O 3 ‐Based Insulated‐Gate Structures with H 2 O Vapor Pretreatment by Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Minoura, Yuichi, Ohki, Toshihiro, Okamoto, Naoya, Nakamura, Norikazu, Kotani, Junji

“…Herein, Al 2 O 3 /InAlGaN/GaN metal–insulator–semiconductor high‐electron‐mobility transistors (MIS‐HEMTs) using H 2 O vapor pretreatment to decrease the…”
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Cellular automaton approach for carrier degeneracy effects on the electron mobility of high electron mobility transistors by Fukuda, Koichi, Hattori, Junichi, Asai, Hidehiro, Ninomiya, Mariko, Yaita, Junya, Kotani, Junji

“…Abstract GaN-based high electron mobility transistors (HEMTs) are expected to have high performance in base station applications. Recently, it was reported…”
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24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN x Layer by Kotani, Junji, Yaita, Junya, Homma, Kenji, Ozaki, Shirou, Yamada, Atsushi, Sato, Masaru, Ohki, Toshihiro, Nakamura, Norikazu

“…This paper reports on an AlGaN/GaN high-electron-mobility transistor (HEMT) on free-standing AlN substrates with a record-high output power density of 24.4…”
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Temperature-dependent mobility modeling of GaN HEMTs by cellular automaton method by Fukuda, Koichi, Hattori, Junichi, Asai, Hidehiro, Yaita, Junya, Kotani, Junji

“…GaN HEMTs are expected to achieve better device performance for microwave applications. The cellular automaton method is effective for predicting the transport…”
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600 V Diamond Junction Field-Effect Transistors Operated at 200 °C by IWASAKI, Takayuki, YAITA, Junya, KATO, Hiromitsu, MAKINO, Toshiharu, OGURA, Masahiko, TAKEUCHI, Daisuke, OKUSHI, Hideyo, YAMASAKI, Satoshi, HATANO, Mutsuko

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A continuous cellular automaton method with flux interpolation for two-dimensional electron gas electron transport analysis by Fukuda, Koichi, Hattori, Junichi, Asai, Hidehiro, Yaita, Junya, Kotani, Junji

“…Due to the innovation of microwave communication using GaN-based HEMT, further improvement of HEMT device performance is expected. Prediction of transport…”
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Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs by Kamada, Yoichi, Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Ohki, Toshihiro, Minoura, Yuichi, Kumazaki, Yusuke, Okamoto, Naoya, Makiyama, Kozo, Nakamura, Norikazu, Kotani, Junji

“…We investigated a thermally stable and low trap density insulator for AlGaN/GaN metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMTs)…”
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Thermally stable and low trap density SiN x /AlON bi-layer structure for AlGaN/GaN MIS-HEMTs by Kamada, Yoichi, Ozaki, Shiro, Yaita, Junya, Yamada, Atsushi, Ohki, Toshihiro, Minoura, Yuichi, Kumazaki, Yusuke, Okamoto, Naoya, Makiyama, Kozo, Nakamura, Norikazu, Kotani, Junji

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Observation of Interface Defects in Diamond Lateral p-n-Junction Diodes and Their Effect on Reverse Leakage Current by Iwasaki, Takayuki, Suwa, Taisuke, Yaita, Junya, Kato, Hiromitsu, Makino, Toshiharu, Ogura, Masahiko, Takeuchi, Daisuke, Yamasaki, Satoshi, Hatano, Mutsuko

“…We investigated an effect of interface defects in diamond lateral p-n-junction diodes on their reverse-biased leakage currents. Defects at the p-n interface…”
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