Search Results - "Yagudin, I. T."

Single-Electron Emission–Injection Transport in a Microstructure with Colloidal Quantum Dots of Narrow-Gap Semiconductors by Zhukov, N. D., Gavrikov, M. V., Kabanov, V. F., Yagudin, I. T.

“…It is shown by approximating the I – V characteristics of colloidal quantum dots of InSb and PbS narrow-gap semiconductors that, in the single-electron mode,…”
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Peculiarities of Electron Transport and Photoconductivity in a Layer of Lead Sulfide Nanoparticles by Shishkin, M. I., Gavrikov, M. V., Yagudin, I. T., Rokakh, A. G.

“…The main laws of electron transport in layers of lead sulfide (PbS) nanoparticles deposited from aqueous ethanol suspensions were determined by analysis of…”
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Effect of Low γ-Radiation Doses on the Optical Properties of Porous Silicon by Bilenko, D. I., Belobrovaya, O. Ya, Terin, D. V., Galushka, V. V., Galushka, I. V., Zharkova, E. A., Polyanskaya, V. P., Sidorov, V. I., Yagudin, I. T.

“…The possibility of modifying the photoluminescence properties of porous silicon by irradiation with low doses of γ photons from a 226 Ra radioisotope source…”
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Gamma-Radiation Monitoring of Luminescent Porous Silicon for Tumor Imaging by Galushka, V. V., Belobrovaya, O. Ya, Bratashov, D. N., Kondrateva, O. Yu, Polyanskaya, V. P., Sidorov, V. I., Yagudin, I. T., Terin, D. V.

“…Photoluminescent macroporous silicon is studied for tumor imaging application. Gamma-radiation is used for modification of morphology of pores and their size…”
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A Study of Quantum Dots in a Multigrain Layer of a Planar-End Microstructure by Zhukov, N. D., Yagudin, I. T., Aban’shin, N. P., Mosiyash, D. S.

“…Quantum dots (QDs) of CdSe, PbS, and InSb semiconductors in a multigrain layer of a planar-end microstructure have been studied. A model of an ordered QDs…”
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Effect of low doses of gamma radiation on the transformation ir spectra of porous silicon by Bilenko, D. I., Terin, D. V., Belobrovaya, O. Ya, Galushka, I. V., Zharkova, E. A., Polyanskaya, V. P., Sidorov, V. I., Yagudin, I. T.

“…The possibilities of modifying the IR spectra of porous silicon under irradiation by low doses of gamma - quanta of radioisotope source of 226 Ra and…”
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Investigation of structures «porous silicon-solid electrolyte AgI by Bilenko, D. I., Galushka, V. V., Mysenko, I. B., Terin, D. V., Kochnev, D. O., Yagudin, I. T.

“…Heterostructures porous silicon-solid electrolyte (pSi-SiMP:Ag-AgI) have change of phase with hysteresis more than 10°C were investigated…”
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