Search Results - "Yadav, Mani Shankar"
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Analysis and Modeling of Bipolar Resistive Switching in 2-D Graphene Electrode- Based Memristor
Published in IEEE transactions on electron devices (01-10-2023)“…Two-dimensional graphene has attracted considerable interest as an electrode material for the memristor due to its low-voltage operation and high integration…”
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Journal Article -
2
Device-circuit co-design of memristor-based on niobium oxide for large-scale crossbar memory
Published in Memories - Materials, Devices, Circuits and Systems (01-10-2023)“…Memristor-based crossbar architecture emerges as a promising candidate for 3-D memory and neuromorphic computing. However, the sneak current through the…”
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Journal Article -
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Performance of Graphene Oxide-based Memristor for Nonvolatile Memory and Neuromorphic Computing
Published in 2022 IEEE International Conference on Emerging Electronics (ICEE) (11-12-2022)“…In this work, we investigate the performance of two-dimensional graphene oxide (GO)-based memristor and explore their advantages over the most popular metal…”
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Conference Proceeding -
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Can Threshold Memory Switching Memristor be Effectively Utilized for the Hardware Implementation of Brain-Inspired Neuromorphic Systems?
Published in 2024 International Semiconductor Conference (CAS) (09-10-2024)“…Integration of the threshold-type selector layer with the memristor device (TS-MS) has emerged as a promising candidate for suppressing the undesired sneak…”
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Conference Proceeding -
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Memory Switching versus Threshold Memory Switching: Finding a Promising Synaptic Device for Brain-Inspired Artificial Learning Systems
Published in ACS applied engineering materials (23-08-2024)“…The integration of a selector layer with resistive switching devices has emerged as a promising strategy for developing large-scale cross-point memory by…”
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Journal Article -
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Design and modeling of niobium oxide-tantalum oxide based self-selective memristor for large-scale crossbar memory
Published in Chaos, solitons and fractals (01-04-2021)“…Memristor-based crossbar architecture has emerged as a promising candidate for 3-D memory, logic, and neuromorphic computing system as it offers remarkably…”
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Journal Article -
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Exploring the Potential of a 1T-1M HfOX-Based Resistive Switching Device for Articulating Artificial Neural Network Hardware
Published in 2024 International Semiconductor Conference (CAS) (09-10-2024)“…In this work, we investigate the pattern recognition accuracy and energy consumption of crossbar architectures based on HfO X -based one-transistor…”
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Conference Proceeding -
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How Good Silicon Oxide-based Memristor Can be?
Published in 2022 35th International Conference on VLSI Design and 2022 21st International Conference on Embedded Systems (VLSID) (01-02-2022)“…Silicon Oxide (SiO x )-based memristor emerges as a promising candidate for 3-D memory, logic, and neuromorphic computing applications due to their high…”
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Conference Proceeding -
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Modulation of Resistive Switching Behaviour of TaOx-based Memristor Through Device Engineering
Published in 2022 IEEE 7th International conference for Convergence in Technology (I2CT) (07-04-2022)“…Tantalum oxide (TaO x )-based memristor has been emerged as a promising candidate for non-volatile memory and neuromorphic computing system as it offers…”
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Conference Proceeding