Search Results - "Yabuki, Yoshifumi"

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  1. 1

    High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise by Tojyo, Tsuyoshi, Uchida, Shiro, Mizuno, Takashi, Asano, Takeharu, Takeya, Motonobu, Hino, Tomonori, Kijima, Satoru, Goto, Shu, Yabuki, Yoshifumi, Ikeda, Masao

    “…High-power AlGaInN laser diodes with both high kink level and low relative intensity noise (RIN) are fabricated. A kink level of higher than 100 mW is obtained…”
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    Journal Article
  2. 2

    AlGaInN high-power lasers grown on an ELO-GaN layer by Takeya, Motonobu, Yanashima, Katsunori, Asano, Takeharu, Hino, Tomonori, Ikeda, Shinro, Shibuya, Katsuyoshi, Kijima, Satoru, Tojyo, Tsuyoshi, Ansai, Shinichi, Uchida, Shiro, Yabuki, Yoshifumi, Aoki, Tsuneyoshi, Asatsuma, Tsunenori, Ozawa, Masafumi, Kobayashi, Toshimasa, Morita, Etsuo, Ikeda, Masao

    Published in Journal of crystal growth (01-12-2000)
    “…Epitaxially laterally overgrown (ELO)-GaN substrates with dislocation-free regions can be prepared with a relatively small thickness using atmospheric pressure…”
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    Journal Article Conference Proceeding
  3. 3

    Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate by Goto, Shu, Ohta, Makoto, Yabuki, Yoshifumi, Hoshina, Yukio, Naganuma, Kaori, Tamamura, Koshi, Hashizu, Toshihiro, Ikeda, Masao

    Published in Physica status solidi. A, Applied research (01-11-2003)
    “…AlGaInN‐based blue–violet laser diodes with a single broad‐area stripe emitter were successfully fabricated on GaN substrates. Three stripe widths were…”
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    Journal Article Conference Proceeding