Search Results - "Yabuki, Yoshifumi"
-
1
High-Power AlGaInN Laser Diodes with High Kink Level and Low Relative Intensity Noise
Published in Japanese Journal of Applied Physics (2002)“…High-power AlGaInN laser diodes with both high kink level and low relative intensity noise (RIN) are fabricated. A kink level of higher than 100 mW is obtained…”
Get full text
Journal Article -
2
AlGaInN high-power lasers grown on an ELO-GaN layer
Published in Journal of crystal growth (01-12-2000)“…Epitaxially laterally overgrown (ELO)-GaN substrates with dislocation-free regions can be prepared with a relatively small thickness using atmospheric pressure…”
Get full text
Journal Article Conference Proceeding -
3
Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate
Published in Physica status solidi. A, Applied research (01-11-2003)“…AlGaInN‐based blue–violet laser diodes with a single broad‐area stripe emitter were successfully fabricated on GaN substrates. Three stripe widths were…”
Get full text
Journal Article Conference Proceeding