A Novel Phase Change Material RF Switch with 16nm Technology to Achieve Low Voltage and Low RonCoff for mmWave

We present an enhanced phase change material (PCMe) RF switch (RFS) to achieve an impressive Ron*Coff of 11.6fs and operates below 1.8V. The PCMe material has low-resistivity that exhibits 40% insertion loss (IL) improvement compared to Ge50Te50, which is greater than -0.5dB, and isolation (ISO) les...

Full description

Saved in:

Bibliographic Details
Published in:	2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) pp. 1 - 2
Main Authors:	Li, H.J., Chang, K.P., Chen, C.E., Hsieh, W.T, Kuo, H.H., Huang, C.C., Chen, H.C., Ya, Z.H., Chen, H.Y., Jin, J.D., Yang, S. H., Ting, Y.W., Tseng, K.C., Huang, K.C., Chuang, Harry
Format:	Conference Proceeding
Language:	English
Published:	IEEE 16-06-2024
Subjects:	Insertion loss ISO Low voltage Phase change materials Radio frequency Switches Very large scale integration
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	We present an enhanced phase change material (PCMe) RF switch (RFS) to achieve an impressive Ron*Coff of 11.6fs and operates below 1.8V. The PCMe material has low-resistivity that exhibits 40% insertion loss (IL) improvement compared to Ge50Te50, which is greater than -0.5dB, and isolation (ISO) less than -28dB at 30GHz. The switch operates 100 million cycles at -40C and 125C with stable Ron, and the transistor underneath is unaffected after RESET/SET 10Mc operations.
ISSN:	2158-9682
DOI:	10.1109/VLSITechnologyandCir46783.2024.10631337