Search Results - "YONGJIK PARK"

Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO2-Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation by Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Jung, Sunghun, Park, Yongjik, Park, Byung-Gook

“…To analyze and explain the gradual reset switching property of the bipolar switching resistive random access memory (RRAM) for multilevel cell (MLC) operation,…”
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FN-degradation of S-RCAT with different grain size and oxidation method by Park, Segeun, Kim, Ilgweon, Park, Yongjik, Choi, Joosun, Roh, Yonghan

“…•We realized Sphere-shaped-recess-cell-array-transistor to improve short channel effect.•Negative shift of threshold voltage and increase of swing were…”
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FN-degradation of S-RCAT with different grain size and oxidation method: Micro/Nano Devices and Systems 2013: An open thematic journal issue by SEGEUN PARK, ILGWEON KIM, YONGJIK PARK, JOOSUN CHOI, YONGHAN ROH

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Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO 2 -Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation by Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Jung, Sunghun, Park, Yongjik, Park, Byung-Gook

“…To analyze and explain the gradual reset switching property of the bipolar switching resistive random access memory (RRAM) for multilevel cell (MLC) operation,…”
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Effect of Oxidation Amount on Gradual Switching Behavior in Reset Transition of Al/TiO 2 -Based Resistive Switching Memory and Its Mechanism for Multilevel Cell Operation by Oh, Jeong-Hoon, Ryoo, Kyung-Chang, Jung, Sunghun, Park, Yongjik, Park, Byung-Gook

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COB stack DRAM cell technology beyond 100 nm technology node by Yongjik Park, Kinam Kim

“…In this paper, the key technologies for future DRAM cells are investigated based on the COB stack cell for DRAM technology generations from 0.15 /spl mu/m node…”
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