Search Results - "YONGHAN ROH"
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Triple boron doped silicon for selective epitaxial growth of 3D NAND flash memory
Published in Journal of the Korean Physical Society (01-06-2022)“…Selective epitaxial growth (SEG) plays a critical role in vertical NAND (VNAND) flash memory because it serves as a ground select line (GSL) transistor, which…”
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An Expandable Yield Prediction Framework Using Explainable Artificial Intelligence for Semiconductor Manufacturing
Published in Applied sciences (01-02-2023)“…Enormous amounts of data are generated and analyzed in the latest semiconductor industry. Established yield prediction studies have dealt with one type of data…”
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n- and p‑Type Doping Phenomenon by Artificial DNA and M‑DNA on Two-Dimensional Transition Metal Dichalcogenides
Published in ACS nano (25-11-2014)“…Deoxyribonucleic acid (DNA) and two-dimensional (2D) transition metal dichalcogenide (TMD) nanotechnology holds great potential for the development of…”
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4
Improvement of Quantum Dot Light Emitting Device Characteristics by CdSe/ZnS Blended with HMDS (Hexamethyldisilazane)
Published in Applied sciences (01-09-2020)“…We demonstrated the way to improve the characteristics of quantum dot light emitting diodes (QD-LEDs) by adding a simple step to the conventional fabrication…”
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5
Roles of Residual Stress in Dynamic Refresh Failure of a Buried-Recessed-Channel-Array Transistor (B-CAT) in DRAM
Published in IEEE electron device letters (01-07-2016)“…We clarify the role of metal gates (e.g., TiN) on the degradation of the state-of-the-art buried-channel-array transistor (B-CAT) in dynamic random access…”
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6
Analysis of asymmetrical hysteresis phenomena observed in TMD-based field effect transistors
Published in AIP advances (01-09-2018)“…To realize field effect transistors with multi-layered MoS2 and WSe2 (hereafter denoted as MoS2 FET and WSe2 FET), many device instability problems should be…”
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7
Effect of body bias on negative bias temperature instability in pMOSFET with SiON gate dielectrics
Published in Solid-state electronics (01-01-2014)“…•We evaluated the body bias effect on NBTI degradation in pMOSFET devices.•Our results can resolve the conflicting arguments on whether Vbs enhances NBTI or…”
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8
Coverage Control of DNA Crystals Grown by Silica Assistance
Published in Angewandte Chemie International Edition (19-09-2011)“…A surface‐assisted fabrication scheme enables direct surface coverage control of functionalized DNA nanostructures on centimeter‐scaled silica (SiO2)…”
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Selective Growth of the Silicon-Oxide Nanodot Array Using Nanosphere Lithography and Liquid-Phase Deposition
Published in IEEE transactions on nanotechnology (01-05-2010)“…In this paper, we demonstrated that a well-ordered array of silicon oxide dots with diameter of 50-60 nm can be easily formed at low temperature using a newly…”
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10
Partial Crystallization of HfO2 for Two-Bit/Four-Level SONOS-Type Flash Memory
Published in IEEE transactions on electron devices (01-12-2007)“…Highly efficient two-bit and four-level device operation is demonstrated by channel hot electron injection programming and hot hole injection erasing for…”
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11
Methane and hydrogen sensing properties of catalytic combustion type single-chip micro gas sensors with two different Pt film thicknesses for heaters
Published in Micro and nano systems letters (15-11-2018)“…A catalytic combustible type single-chip micro gas sensor was fabricated by MEMS technology and responses with input powers and methane and hydrogen gas…”
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12
Selective Alignment of Gold Nanowires Synthesized With DNA as Template by Surface-Patterning Technique
Published in IEEE transactions on nanotechnology (01-03-2010)“…The direct and selective assembly of deoxyribonucleic acid (DNA)-templated metal (e.g., Ag, Au, Cu, and Pd) nanowires (NWs) is a key technique for the…”
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13
Characteristics of Ultrashallow Hetero Indium-Gallium-Zinc-Oxide/Germanium Junction
Published in IEEE electron device letters (01-10-2012)“…In this letter, we demonstrate an n-indium-gallium-zinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of ~ 37 nm…”
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Controlled gold nanoparticle assembly on DNA molecule as template for nanowire formation
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-2006)“…A reducer was used to construct Au nanowires (AuNWs) by the conjugation of 2-aminoethanthiol-capped gold nanoparticles (AET-AuNPs) and the immobilized DNA…”
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Fabrication of SiO2 nano-dots by block copolymer lithography and liquid phase deposition
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15-02-2008)“…Block copolymer thin films have been used as templates for the nanopatterning of metallic or semiconducting materials. We demonstrated less than 50nm nano-dots…”
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Data Additive Residual Learning based Yield Prediction for Semiconductor Manufacturing
Published in 2023 IEEE 39th International Conference on Data Engineering (ICDE) (01-04-2023)“…In semiconductor manufacturing, yield prediction and yield-related factor detection are critical. Various process data are analyzed to predict the yield and…”
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Conference Proceeding -
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Nanometer-scaled triangular platinum islands fabricated using the bridge phenomenon of polystyrene beads
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-07-2008)“…The authors optimized the fabrication of nanometer-scaled triangular platinum islands using the bridge phenomenon of polystyrene beads. Both the mixture ratio…”
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Leakage Current Reduction Mechanism of Oxide--Nitride--Oxide Inter-Poly Dielectrics through the Post Plasma Oxidation Treatment
Published in Japanese Journal of Applied Physics (01-04-2011)“…High quality oxide--nitride--oxide (ONO) inter-poly dielectrics were successfully fabricated by the optimized plasma oxidation without H 2 . The bottom low…”
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Leakage Current Reduction Mechanism of Oxide–Nitride–Oxide Inter-Poly Dielectrics through the Post Plasma Oxidation Treatment
Published in Japanese Journal of Applied Physics (01-04-2011)Get full text
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20
Improving hole injection ability using a newly proposed WO3/NiOx bilayer in solution processed quantum dot light-emitting diodes
Published in Current applied physics (01-06-2022)“…We propose a novel device structure with a WO3/NiOx bilayer to improve the hole injection ability in QLEDs fabricated mainly by a solution-based process…”
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