Search Results - "YONENAGA, I"

Anomalous low energy phonon dispersion in bulk silicon-germanium observed by inelastic x-ray scattering by Yokogawa, R., Takeuchi, H., Arai, Y., Yonenaga, I., Tomita, M., Uchiyama, H., Watanabe, T., Ogura, A.

“…We report on an anomalous mode distinct from both optical and acoustic modes in phonon dispersion curves of bulk Si1−xGex alloy with x taking the values of…”
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Growth and fundamental properties of SiGe bulk crystals by Yonenaga, I.

“…Czochralski growth of bulk crystals of Si x Ge 1− x alloys and their fundamental properties were reported. Full single crystals of large size, larger than 25…”
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Insight into physical processes controlling the mechanical properties of the wurtzite group-III nitride family by Yonenaga, I., Deura, M., Tokumoto, Y., Kutsukake, K., Ohno, Y.

“…•Mechanical properties and elastic moduli of BN, AlN, GaN and InN were summarized.•Hardness of the nitrides varied with the a-axis lattice constant a as an…”
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Optical and electrical properties of dislocations in plastically deformed GaN by Yonenaga, I., Ohno, Y., Yao, T., Edagawa, K.

“…Optical and electrical properties of fresh dislocations in GaN bulk crystals deformed plastically at elevated temperatures were reviewed. A dislocation band…”
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In-situ micro and near-field photo-excitation under transmission electron microscopy by Ohno, Y., Yonenaga, I.

“…•We form an intense micro- and near-field light probe for conventional thin specimens under TEM, by which both structural and optical properties are obtained…”
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Dislocation–impurity interaction in Si by Yonenaga, I.

“…Dynamic dislocation–impurity interactions in CZ–Si doped with light impurity (N), acceptor (B), donor (P, As, Sb) and neutral (Ge) impurities were investigated…”
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Thermo-mechanical stability of wide-bandgap semiconductors: high temperature hardness of SiC, AlN, GaN, ZnO and ZnSe by Yonenaga, I.

“…The hardness of single crystals α-SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures was measured by the Vickers indentation method in the temperature range…”
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A novel constitutive model for semiconductors: The case of silicon by Cochard, J., Yonenaga, I., M'Hamdi, M., Zhang, Z.L.

“…The photovoltaic industry relies heavily on solar-grade silicon multicrystals. Understanding their mechanical behavior requires the development of adequate…”
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How to best measure atomic segregation to grain boundaries by analytical transmission electron microscopy by Walther, T., Hopkinson, M., Daneu, N., Recnik, A., Ohno, Y., Inoue, K., Yonenaga, I.

“…This study provides an overview of the recent experiments employing methods that analyse, systematically, series of analytical spectra acquired either in…”
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Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations by OHNO, Y., INOUE, K., FUJIWARA, K., KUTSUKAKE, K., DEURA, M., YONENAGA, I., EBISAWA, N., SHIMIZU, Y., INOUE, K., NAGAI, Y., YOSHIDA, H., TAKEDA, S., TANAKA, S., KOHYAMA, M.

“…Summary We have developed an analytical method to determine the segregation levels on the same tilt boundaries (TBs) at the same nanoscopic location by a joint…”
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Spectroscopic identification of shallow muonium acceptors in Si0.06Ge0.94 by Carroll, B. R., Lichti, R. L., Mengyan, P. W., Baker, B. B., Celebi, Y. G., King, P. J. C., Chow, K. H., Yonenaga, I.

“…We report Muon Spin Resonance spectra for Si0.06Ge0.94 that can be attributed to undissociated shallow muonium acceptors. This effective mass acceptor state is…”
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Czochralski growth of heavily indium-doped Si crystals and co-doping effects of group-IV elements by Inoue, K., Taishi, T., Tokumoto, Y., Kutsukake, K., Ohno, Y., Ohsawa, T., Gotoh, R., Yonenaga, I.

“…Heavily indium (In)-doped Si crystals were grown by the Czochralski method under a consideration of the effects of co-doping of electrically neutral group-IV…”
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Czochralski growth of heavily tin-doped Si crystals by Yonenaga, I., Taishi, T., Inoue, K., Gotoh, R., Kutsukake, K., Tokumoto, Y., Ohno, Y.

“…Heavily tin (Sn)-doped Si crystals in a concentration up to 4×1019cm−3 were grown by the Czochralski method. Variation of Sn concentration in the crystals was…”
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Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si x Ge1−x (0.93 < x < 0.96) single crystals by Yonenaga, I.

“…Undoped and impurity-doped single crystals of Si^sub x^Ge^sub 1-x^ with the composition 0.93 < x < 0.96 were grown by the Czochralski technique. The Hall…”
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Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type SixGe1−x (0.93 < x < 0.96) single crystals by Yonenaga, I.

“…Undoped and impurity-doped single crystals of Si x Ge 1 −x with the composition 0.93 <  x  < 0.96 were grown by the Czochralski technique. The Hall electron…”
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Slip systems in wurtzite ZnO activated by Vickers indentation on {21¯1¯0} and {101¯0} surfaces at elevated temperatures by Ohno, Y., Koizumi, H., Tokumoto, Y., Kutsukake, K., Taneichi, H., Yonenaga, I.

“…Dislocations were introduced in wurtzite zinc oxide single crystals by Vickers indentations on {21¯1¯0} and {101¯0} surfaces at elevated temperatures, and…”
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Cellular structures in Czochralski-grown SiGe bulk crystal by Yonenaga, I., Taishi, T., Ohno, Y., Tokumoto, Y.

“…A high purity Si x Ge 1 −x alloy ( x 0=0.89) 48 mm in length with a maximum diameter of 25 mm was grown by the Czochralski method. Development of the cellular…”
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Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors by Yonenaga, I., Ohno, Y., Taishi, T., Tokumoto, Y.

“…The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From…”
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Segregation coefficients of various dopants in SixGe1-x (0.93<x<0.96) single crystals by YONENAGA, I, AYUZAWA, T

“…Si-rich SixGe1-x alloys (0.93 < x < 0.96) heavily doped with B, Ga, In, P, As and Sb were grown by the Czochralski technique. Full single crystals more than 50…”
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Czochralski growth of heavily impurity doped crystals of GeSi alloys by Yonenaga, I

“…Heavily impurity (boron, gallium, phosphorus) doped single crystals of Si-rich Ge 1− x Si x alloys with the composition 0.80< x<1 were grown by the Czochralski…”
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