Search Results - "YAKUSHEV, M. V"

Electronic and structural characterisation of Cu3BiS3 thin films for the absorber layer of sustainable photovoltaics by Yakushev, M.V., Maiello, P., Raadik, T., Shaw, M.J., Edwards, P.R., Krustok, J., Mudryi, A.V., Forbes, I., Martin, R.W.

“…Thin films of p-type Cu3BiS3 with an orthorhombic wittichenite structure, a semiconductor with high potential for thin film solar cell absorber layers, were…”
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Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe by Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, G. Yu, Yakushev, M. V.

“…Dark currents in medium-wave nBn structures based on HgCdTe grown with the aid of molecular beam epitaxy on the (013) GaAs substrates are studied. The…”
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Strong interband Faraday rotation in 3D topological insulator Bi2Se3 by Ohnoutek, L., Hakl, M., Veis, M., Piot, B. A., Faugeras, C., Martinez, G., Yakushev, M. V., Martin, R. W., Drašar, Č., Materna, A., Strzelecka, G., Hruban, A., Potemski, M., Orlita, M.

“…The Faraday effect is a representative magneto-optical phenomenon, resulting from the transfer of angular momentum between interacting light and matter in…”
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Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy by Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Yu, Yakushev, M. V.

“…The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on…”
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Fabrication and characterisation of Cu(In,Ga)Se2 solar cells on polyimide by ZACHMANN, H, PUTTNINS, S, YAKUSHEV, M. V, LUCKERT, F, MARTIN, R. W, KAROTKI, A. V, GREMENOK, V. F, MUDRYI, A. V

“…Solar cells with the structure ZnO:Al/i-ZnO/CdS/Cu(In,Ga)Se2/Mo/polyimide were examined using a range of techniques. The elemental composition of the…”
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Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures by Komkov, O. S., Yakushev, M. V.

“…— Multilayer mercury–cadmium–telluride photodetecting heterostructures grown by molecular beam epitaxy on Si and GaAs substrates were studied using the…”
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Temperature Dependence of the Spectra of Optical Constants of CdTe in the Region of the Absorption Edge by Shvets, V. A., Marin, D. V., Yakushev, M. V., Rykhiitskii, S. V.

“…In this work, the spectra of optical constants of epitaxial layers of cadmium telluride near the fundamental absorption edge are studied. For this purpose,…”
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In situ Ellipsometric Control of Growth Processes of ZnTe and CdTe Buffer Layers in Technology of Molecular Beam Epitaxy of Mercury Cadmium Telluride by Shvets, V. A., Marin, D. V., Yakushev, M. V., Rykhlitskii, S. V.

“…The problems of in situ ellipsometric control during the growth of ZnTe and CdTe buffer layers intended for cadmium-mercury-tellurium epitaxy are considered…”
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Study of MIS structures based on CdHgTe and HfO2 applied by PEALD by Gorshkov, D. V., Zakirov, E. R., Sidorov, G. Yu, Sabinina, I. V., Marin, D. V., Ikusov, D. G., Yakushev, M. V., Golyashov, V. A., Tereshchenko, O. E.

“…We investigate the HfO2/Hg0.78Cd0.22Te interface fabricated by plasma-enhanced atomic layer deposition (PEALD) at 120 °C During the deposition of HfO2, no…”
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Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te by Ruzhevich, M. S., Firsov, D. D., Komkov, O. S., Mynbaev, K. D., Varavin, V. S., Yakushev, M. V.

“…The results of photoluminescence (PL) study of As-doped Cd 0.3 Hg 0.7 Te solid solutions films grown by molecular beam epitaxy on a Si substrate are presented…”
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Reconversion of the CdHgTe conductivity type after plasma etching process at low temperature by Gorshkov, D. V., Sidorov, G. Yu, Varavin, V. S., Sabinina, I. V., Yakushev, M. V.

“…We report on the relaxation of Hall coefficient RH (77 K) depending on the magnetic field in p-Cdx Hg 1 − xT (x = 0.222) to the initial values, which were…”
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The band structure of CuInTe2 studied by optical reflectivity by Yakushev, M. V., Mudryi, A. V., Kärber, E., Edwards, P. R., Martin, R. W.

“…CuInTe2 is a semiconductor with high potential for use as a thermoelectric material and as the absorber in thin film solar cells. Studying the optical…”
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Erratum to: Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te by Ruzhevich, M. S., Firsov, D. D., Komkov, O. S., Mynbaev, K. D., Varavin, V. S., Yakushev, M. V.

“…An Erratum to this paper has been published: https://doi.org/10.1134/S1063782624060010…”
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Optical properties of high quality Cu2ZnSnSe4 thin films by Luckert, F., Hamilton, D. I., Yakushev, M. V., Beattie, N. S., Zoppi, G., Moynihan, M., Forbes, I., Karotki, A. V., Mudryi, A. V., Grossberg, M., Krustok, J., Martin, R. W.

“…Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of…”
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Temperature Dependence of Optical Reflection Spectra of Cuinse2 Single Crystals with the Chalcopyrite Structure by Borodavchenko, O. M., Zhivulko, V. D., Myalik, I. D., Mudryi, A. V., Yakushev, M. V.

“…Resonances of free excitons at energies A ~ 1.0409 eV, B ~ 1.0445 eV, and C ~ 1.2690 eV were detected in reflection spectra of single crystals of the…”
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Optical probing of extended defects in CdTe virtual substrates via isolated emitters produced by weakly perturbed fragments of partial dislocations by Krivobok, V. S., Chentsov, S. I., Nikolaev, S. N., Chernopitssky, M. A., Onishchenko, E. E., Pruchkina, A. A., Martovitskiy, V. P., Bagaev, V. S., Ikusov, D. G., Marin, D. V., Mikhailov, N. N., Yakushev, M. V.

“…It is shown that, at helium temperatures, relaxed CdTe films reveal isolated emitters, the properties of which indicate their relation with a weakly perturbed…”
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Optical Studies of Molecular-Beam Epitaxy-Grown Hg1−xCdxTe with x = 0.7–0.8 by Mynbaev, K. D., Smirnov, A. M., Bazhenov, N. L., Mikhailov, N. N., Remesnik, V. G., Yakushev, M. V.

“…Optical transmission, photoluminescence and photoconductivity were used to study Hg 1− x Cd x Te with x  = 0.7–0.8 (bandgap 0.8–1.1 eV at 300 K) grown by…”
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An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy by Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Dvoretsky, S. A., Mikhailov, N. N., Sidorov, G. Y., Yakushev, M. V.

“…Mid-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (013) substrates were fabricated. The composition in the absorbing…”
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Photoluminescence of Hg0.3Cd0.7Te and Hg0.7Cd0.3Te Epitaxial Films by Ruzhevich, M. S., Mynbaev, K. D., Bazhenov, N. L., Varavin, V. S., Remesnik, V. G., Mikhailov, N. N., Yakushev, M. V.

“…The results of a study of photoluminescence (PL) of epitaxial films of Hg 0.3 Cd 0.7 Te and Hg 0.7 Cd 0.3 Te solid solutions grown by molecular beam epitaxy…”
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Effect of 4-MeV Electron Irradiation on Radiative Recombination of Cu(In,Ga)(S,Se)2 Thin Films in Solar Cells by Zhivulko, V. D., Mudryi, A. V., Borodavchenko, O M., Lutsenko, E. V., Pavlovskii, V. N., Yablonskii, G. P., Yakushev, M. V.

“…The effect of irradiation with different doses of 4-MeV electrons on radiative recombination of nonequilibrium charge carriers in Cu(In,Ga)(S,Se) 2 thin films…”
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