Search Results - "YAHNG, J. S"

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  1. 1

    The influence of substrate temperature on femtosecond laser micro-processing of silicon, stainless steel and glass by Yahng, J.S., Nam, J.R., Jeoung, S.C.

    Published in Optics and lasers in engineering (01-07-2009)
    “…We report the influence of substrate temperature on femtosecond laser ablation of silicon, stainless steel, and glass. Remarkable decrease in surface roughness…”
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    Journal Article
  2. 2

    Thickness determination with chemical identification of double-layered polymeric thin film by using multiplex CARS by Yahng, J.S., Jeoung, S.C.

    Published in Optics and lasers in engineering (2011)
    “…By utilizing characteristic Coherent anti-Stokes Raman Scattering (CARS) spectra from different organic polymers of polystyrene (PS) and polymethylmethacrylate…”
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    Journal Article
  3. 3
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    Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells by Jho, Y. D., Yahng, J. S., Oh, E., Kim, D. S.

    Published in Applied physics letters (20-08-2001)
    “…We have measured both spectrum- and time-resolved photoluminescence (PL) of InGaN/GaN light-emitting diode structure as a function of an external bias. From…”
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    Journal Article
  5. 5

    Silicon substrate temperature effects on surface roughness induced by ultrafast laser processing by Yahng, J.S., Jeoung, S.C.

    Published in Optics and lasers in engineering (01-08-2011)
    “…We report the effect of substrate temperature ( T sub ) in the range 300–900 K on the surface roughness of silicon wafer resulted from femtosecond laser…”
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    Journal Article
  6. 6

    Nonlinear enhancement of femtosecond laser ablation efficiency by hybridization with nanosecond laser by Yahng, J S, Chon, B H, Kim, C H, Jeoung, S C, Kim, H R

    Published in Optics express (02-10-2006)
    “…Synchronization of femtosecond laser with nanosecond (~250 ns) laser results in a large enhancement in laser ablation efficiency of the Si wafer 12 times more…”
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    Journal Article
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    Probing strained InGaN/GaN nanostructures with ultrashort acoustic phonon wave packets generated by femtosecond lasers by Yahng, J. S., Jho, Y. D., Yee, K. J., Oh, E., Woo, J. C., Kim, D. S., Sanders, G. D., Stanton, C. J.

    Published in Applied physics letters (24-06-2002)
    “…Large amplitude time-domain oscillations are detected in InxGa1−xN/GaN structures via femtosecond differential reflectivity spectroscopy. The oscillation…”
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    Journal Article
  9. 9

    Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy by Woo, D.H, Oh, M.S, Koh, E.H, Yahng, J.S, Kim, S.H, Kim, Y.D

    Published in Microelectronic engineering (2000)
    “…We have carried out a double-crystal X-ray diffraction (DCXRD) study on ternary In 1− x Ga x As/InP and quaternary In 1− x Ga x As y P 1− y /InP strained…”
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    Journal Article
  10. 10

    Coherent phonons, nanoseismology and THz radiation in InGaN/GaN heterostructures by Stanton, C.J, Sanders, G.D, Liu, R, Chern, G.W, Sun, C.-K, Yahng, J.S, Jho, Y.D, Sohn, J.Y, Oh, E, Kim, D.S

    Published in Superlattices and microstructures (01-09-2003)
    “…The ultrafast optical photoexcitation of hot electrons and holes in semiconductors by femtosecond laser pulses can trigger coherent phonon oscillations. We…”
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    Journal Article
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    Temperature Dependence of Ultrafast Laser Ablation Efficiency of Crystalline Silicon by Yahng, J.S., Jeoung, S.C.

    “…Ultrafast laser ablation of crystalline silicon was investigated as a function of temperature. The ablation efficiency is slightly enhanced with an apparent…”
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    Conference Proceeding
  13. 13

    Temperature dependence of ultrafast laser ablation efficiency of crystalline silicon by Yahng, J. S., Jeoung, S. C.

    “…Ultrafast laser ablation of crystalline silicon was investigated as a function of temperature. The ablation efficiency is slightly enhanced with an apparent…”
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    Conference Proceeding
  14. 14
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    The influence of ambient temperature on femtosecond laser ablation of semiconductor and metal by Yahng, J.S., Nam, J.R., Yoon, T.O., Jeoung, S.C.

    “…Ultrafast laser ablation of silicon and metal was investigated as a function of temperature. The ablation efficiency is slightly enhanced with an apparent…”
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    Conference Proceeding
  16. 16

    Ultrafast spectroscopy of propagating coherent acoustic phonons in GaN/InGaN heterostructures by Liu, Rongliang, Kim, Chang Sub, Sanders, G. D, Stanton, C. J, Yahng, J. S, Jho, Y. D, Yee, K. J, Oh, E, Kim, D. S

    Published 28-10-2003
    “…We show that large amplitude, coherent acoustic phonon wavepackets can be generated and detected in In$_x$Ga$_{1-x}$N/GaN epilayers and heterostructures in…”
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    Journal Article
  17. 17

    From exciton resonance to frequency mixing in the femtosecond nondegenerate four-wave mixing by Ahn, Y.H., Yahng, J.S., Sohn, J.Y., Kim, D.S.

    “…We demonstrate a transition from exciton resonance to frequency mixing for the first time, in the nondegenerate femtosecond four wave mixing (FWM) of a…”
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    Conference Proceeding
  18. 18

    Coherent bulk and folded acoustic phonon oscillations in InGaN light-emitting diodes structure by Yahng, J.S., Jho, Y.D., Yee, K.J., Oh, E.S., Kim, D.S.

    “…Summary form only given. Recently, there has been much interest in InGaN/GaN multiple-quantum-well (MQW) structures due to their applicability as…”
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    Conference Proceeding