Search Results - "YAHNG, J. S"
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The influence of substrate temperature on femtosecond laser micro-processing of silicon, stainless steel and glass
Published in Optics and lasers in engineering (01-07-2009)“…We report the influence of substrate temperature on femtosecond laser ablation of silicon, stainless steel, and glass. Remarkable decrease in surface roughness…”
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Thickness determination with chemical identification of double-layered polymeric thin film by using multiplex CARS
Published in Optics and lasers in engineering (2011)“…By utilizing characteristic Coherent anti-Stokes Raman Scattering (CARS) spectra from different organic polymers of polystyrene (PS) and polymethylmethacrylate…”
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Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wells
Published in Applied physics letters (20-08-2001)“…We have measured both spectrum- and time-resolved photoluminescence (PL) of InGaN/GaN light-emitting diode structure as a function of an external bias. From…”
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Silicon substrate temperature effects on surface roughness induced by ultrafast laser processing
Published in Optics and lasers in engineering (01-08-2011)“…We report the effect of substrate temperature ( T sub ) in the range 300–900 K on the surface roughness of silicon wafer resulted from femtosecond laser…”
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Nonlinear enhancement of femtosecond laser ablation efficiency by hybridization with nanosecond laser
Published in Optics express (02-10-2006)“…Synchronization of femtosecond laser with nanosecond (~250 ns) laser results in a large enhancement in laser ablation efficiency of the Si wafer 12 times more…”
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Femtosecond Four-Wave Mixing Experiments on GaAs Quantum Wells Using Two Independently Tunable Lasers
Published in Physical review letters (25-05-1998)Get full text
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Probing strained InGaN/GaN nanostructures with ultrashort acoustic phonon wave packets generated by femtosecond lasers
Published in Applied physics letters (24-06-2002)“…Large amplitude time-domain oscillations are detected in InxGa1−xN/GaN structures via femtosecond differential reflectivity spectroscopy. The oscillation…”
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Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy
Published in Microelectronic engineering (2000)“…We have carried out a double-crystal X-ray diffraction (DCXRD) study on ternary In 1− x Ga x As/InP and quaternary In 1− x Ga x As y P 1− y /InP strained…”
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Coherent phonons, nanoseismology and THz radiation in InGaN/GaN heterostructures
Published in Superlattices and microstructures (01-09-2003)“…The ultrafast optical photoexcitation of hot electrons and holes in semiconductors by femtosecond laser pulses can trigger coherent phonon oscillations. We…”
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From Exciton Resonance to Frequency Mixing in GaAs Multiple Quantum Wells
Published in Physical review letters (10-05-1999)Get full text
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Temperature Dependence of Ultrafast Laser Ablation Efficiency of Crystalline Silicon
Published in 2007 Conference on Lasers and Electro-Optics (CLEO) (01-05-2007)“…Ultrafast laser ablation of crystalline silicon was investigated as a function of temperature. The ablation efficiency is slightly enhanced with an apparent…”
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Conference Proceeding -
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Temperature dependence of ultrafast laser ablation efficiency of crystalline silicon
Published in 2007 Quantum Electronics and Laser Science Conference (01-05-2007)“…Ultrafast laser ablation of crystalline silicon was investigated as a function of temperature. The ablation efficiency is slightly enhanced with an apparent…”
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Conference Proceeding -
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The influence of ambient temperature on femtosecond laser ablation of semiconductor and metal
Published in 2007 Conference on Lasers and Electro-Optics - Pacific Rim (01-08-2007)“…Ultrafast laser ablation of silicon and metal was investigated as a function of temperature. The ablation efficiency is slightly enhanced with an apparent…”
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Conference Proceeding -
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Ultrafast spectroscopy of propagating coherent acoustic phonons in GaN/InGaN heterostructures
Published 28-10-2003“…We show that large amplitude, coherent acoustic phonon wavepackets can be generated and detected in In$_x$Ga$_{1-x}$N/GaN epilayers and heterostructures in…”
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From exciton resonance to frequency mixing in the femtosecond nondegenerate four-wave mixing
Published in Technical Digest. CLEO/Pacific Rim '99. Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.99TH8464) (1999)“…We demonstrate a transition from exciton resonance to frequency mixing for the first time, in the nondegenerate femtosecond four wave mixing (FWM) of a…”
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Conference Proceeding -
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Coherent bulk and folded acoustic phonon oscillations in InGaN light-emitting diodes structure
Published in Technical Digest. Summaries of papers presented at the Quantum Electronics and Laser Science Conference. Postconference Technical Digest (IEEE Cat. No.01CH37172) (2001)“…Summary form only given. Recently, there has been much interest in InGaN/GaN multiple-quantum-well (MQW) structures due to their applicability as…”
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Conference Proceeding