Search Results - "YABLONSKII, G. P"

MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers by Tuna, Ö., Hahn, H., Kalisch, H., Giesen, C., Vescan, A., Rzheutski, M.V., Pavlovskii, V.N., Lutsenko, E.V., Yablonskii, G.P., Heuken, M.

“…A series of Mg-doped thick InGaN layers with different Cp2Mg flows were grown on n-type GaN layers. The Mg doping effect on optical and electrical properties…”
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Structural, electrical and optical characterization of MOCVD grown In-rich InGaN layers by Tuna, Ö., Linhart, W.M., Lutsenko, E.V., Rzheutski, M.V., Yablonskii, G.P., Veal, T.D., McConville, C.F., Giesen, C., Kalisch, H., Vescan, A., Heuken, M.

“…We report on the growth of In-rich InGaN layers on GaN/sapphire templates. InGaN layers of various In contents were grown at a low temperature of 550°C by…”
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Photoluminescence, stimulated and laser emission in CuInSe2 crystals by Svitsiankou, I. E., Pavlovskii, V. N., Lutsenko, E. V., Yablonskii, G. P., Mudryi, A. V., Borodavchenko, O. M., Zhivulko, V. D., Martin, R. W., Yakushev, M. V.

“…Excitonic quality CuInSe2 crystals were studied using low-temperature (10 K) photoluminescence (PL) excited by continuous wave and nanosecond pulsed lasers at…”
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Photoluminescence of Low-Density Polyethylene Composites with the CaGa2S4:Eu2+ Phosphor by Tagiev, O. B., Ibragimov, T. D., Ramazanov, I. S., Asadov, E. A., Nuraliyev, A. F., Orudzhev, T. Ya, Lutsenko, E. V., Pavlovskii, V. N., Danilchyk, A. V., Yablonskii, G. P.

“…A study was carried out on the luminescence excitation spectra and photoluminescence (PL) spectra as well as the luminescence kinetics of low-density…”
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Effect of 4-MeV Electron Irradiation on Radiative Recombination of Cu(In,Ga)(S,Se)2 Thin Films in Solar Cells by Zhivulko, V. D., Mudryi, A. V., Borodavchenko, O M., Lutsenko, E. V., Pavlovskii, V. N., Yablonskii, G. P., Yakushev, M. V.

“…The effect of irradiation with different doses of 4-MeV electrons on radiative recombination of nonequilibrium charge carriers in Cu(In,Ga)(S,Se) 2 thin films…”
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Growth and investigation of m-plane (In)GaN buffer layers on LiAlO2 substrates by MAUDER, C, RAHIMZADEH KHOSHROO, L, KALISCH, H, JANSEN, R. H, BEHMENBURG, H, WEN, T. C, DIKME, Y, RZHEUTSKII, M. V, YABLONSKII, G. P, WOITOK, J, CHOU, M. M. C, HEUKEN, M

“…We deposited pure m-plane GaN (1 1_ 0 0) layers on LiAlO2 (1 0 0) substrates by MOVPE using Mg-doped InGaN buffer layers of various thickness. These sealing…”
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Correction to: Photoluminescence of Low-Density Polyethylene Composites with the CaGa2S4:Eu2+ Phosphor by Tagiev, O. B., Ibragimov, T. D., Ramazanov, I. S., Asadov, E. G., Nuraliyev, A. F., Orudzhev, T. Ya, Lutsenko, E. V., Pavlovskii, V. N., Danilchyk, A. V., Yablonskii, G. P.

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Photoluminescence of CaAl2O4:Eu3+ Nanoluminophores over Wide Intervals of Temperature and Laser Excitation Level by Tagiev, O. B., Urmanov, B. D., Leonenia, M. S., Yablonskii, G. P., Ibrahimov, H. J.

“…Excitation and photoluminescence spectra of CaAl 2 O 4 :Eu 3+ nanoluminophores were studied over wide intervals of temperature from 10 to 300 K and laser…”
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Structure of Photoluminescence Spectra of Oxygen-Doped Graphitic Carbon Nitride by Chubenko, E. B., Baglov, A. V., Leonenya, M. S., Yablonskii, G. P., Borisenko, V. E.

“…The relationships governing variation of the photoluminescence of graphitic carbon nitride synthesized by heat treatment of melamine in a closed air medium…”
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Spontaneous and Stimulated Emission in Thin Films of Cu(In1 –xGax)(SySe1 –y)2 Solid Solutions in the Сomposition of Solar Cells by Svitsiankou, I. E., Pavlovskii, V. N., Muravitskaya, E. V., Lutsenko, E. V., Yablonskii, G. P., Borodavchenko, O. M., Zhivulko, V. D., Mudry, A. V., Yakushev, M. V., Kognovitckii, S. O.

“…The emission spectra of thin nanocrystalline films of Cu(In 1 – x Ga x )(S y Se 1 – y ) 2 (CIGSSe) direct-gap solid solutions in the structure of solar cells,…”
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Temperature Dependence of the Band-Gap Width of Mn1.5AgIn8.0S14 Single Crystals by Bodnar, I. V., Than, Ch. B., Pavlovskii, V. N., Svitsiankou, I. E., Yablonskii, G. P.

“…Mn 1.5 AgIn 8.0 S 14 single crystals were grown by Bridgman directed melt crystallization. Their composition and crystal structure were determined. Single…”
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MBE AlGaN/GaN HEMT Heterostructures with Optimized AlN Buffer on Al2O3 by Lutsenko, E. V., Rzheutski, M. V., Vainilovich, A. G., Svitsiankou, I. E., Shulenkova, V. A., Muravitskaya, E. V., Alexeev, A. N., Petrov, S. I., Yablonskii, G. P.

“…The effect of molecular-beam epitaxy (MBE) growth conditions on properties of AlN epitaxial layers was investigated resulting in determination of optimal…”
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Stimulated Emission of Thin Cu(In, Ga)Se2 Films Irradiated by Protons by Svitsiankou, I. E., Pavlovskii, V. N., Lutsenko, Е. V., Yablonskii, G. P., Мudryi, А. V., Borodavchenko, О. М., Zhivulko, V. D., Yakushev, М. V.

“…Spontaneous and stimulated emission (SE) of thin Cu(In,Ga)Se 2 films, deposited on sodium-containing glass substrates and irradiated by protons with an energy…”
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Random Lasers Based on Mixtures of Micropowders of ZnCdSSe Solid Solutions and Phosphors Ca4Ga2S7:Eu2+ and Ca(Al0.1Ga0.9)2S4:Eu2 by Urmanov, B. D., Leanenia, M. S., Yablonskii, GP, Tagiev, O. B., Asadov, E. G.

“…Random lasing was achieved in CdS and Zn 0.65 Cd 0.35 Se micropowders at optical pump levels of 0.1–2 MW/cm 2 with N 2 -laser radiation at wavelength 337 nm…”
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Luminescence and Stimulated Emission of Polycrystalline Cu(In,Ga)Se2 Films Deposited by Magnetron-Assisted Sputtering by Svitsiankou, I. E., Pavlovskii, V. N., Lutsenko, E. V., Yablonskii, G. P., Shiripov, V. Y., Khokhlov, E. A., Mudryi, A. V., Zhivulko, V. D., Borodavchenko, O. M., Yakushev, M. V.

“…The stimulated emission of Cu(In,Ga)Se 2 alloy thin films formed by magnetron-assisted sputtering onto a sodium-fluoride layer deposited onto a molybdenum…”
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Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE by Lutsenko, E. V., Pavlovskii, V. N., Danilchyk, A. V., Osipov, K. A., Rzheutskii, N. V., Zubialevich, V. Z., Gurskii, A. L., Yablonskii, G. P., Malinauskas, T., Jarašiūnas, K., Kazlauskas, K., Juršėnas, S., Miasojedovas, S., Žukauskas, A., Dikme, Y., Kalisch, H., Jansen, R. H., Schineller, B., Heuken, M.

“…Optical properties and carrier dynamics were investigated in a set of samples grown on Si utilizing different layer combinations between the topmost GaN layer…”
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Stimulated Emission and Optical Properties of Solid Solutions of Cu(In,Ga)Se2 Direct Band Gap Semiconductors by Svitsiankou, I. E., Pavlovskii, V. N., Lutsenko, E. V., Yablonskii, G. P., Mudryi, A. V., Borodavchenko, O. M., Zhivulko, V. D., Yakushev, M. V., Martin, R.

“…Stimulated emission, optical properties, and structural characteristics of non-irradiated and proton-irradiated Cu(In,Ga)Se 2 thin films deposited on soda lime…”
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Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures by Yablonskii, G.P., Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Gurskii, A.L., Kalisch, H., Szymakowskii, A., Jansen, R.A., Alam, A., Dikme, Y., Schineller, B., Heuken, M.

“…Photoluminescence (PL) and stimulated emission of GaN/Si layers grown by MOVPE with AlN and AlGaN buffers have been investigated. It has been found that…”
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AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique by Jmerik, V.N., Shubina, T.V., Mizerov, A.M., Belyaev, K.G., Sakharov, A.V., Zamoryanskaya, M.V., Sitnikova, A.A., Davydov, V.Yu, Kop’ev, P.S., Lutsenko, E.V., Rzheutskii, N.V., Danilchik, A.V., Yablonskii, G.P., Ivanov, S.V.

“…Al-rich AlGaN layers and quantum well (QW) structures with a reasonable structural quality have been grown by plasma-assisted molecular beam epitaxy (PA-MBE)…”
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Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates by MAUDER, C, REUTERS, B, RAHIMZADEH KHOSHROO, L, RZHEUTSKII, M. V, LUTSENKO, E. V, YABLONSKII, G. P, WOITOK, J. F, HEUKEN, M, KALISCH, H, JANSEN, R. H

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