Search Results - "Xuanwu Kang"

Development of UV light-emitting diodes based AlGaN/GaN heterojunction utilizing thermal oxidation annealing by Li, Qiuen, Kang, Xuanwu, Wu, Hao, Zheng, Yingkui, Liu, Xinyu, Huang, Chengjun

“…Ultraviolet (UV) irradiation has a significant impact on enhancing the performance of sensors. Currently, there is still an urgent need for devices that are…”
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Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices by Huang, Sen, Liu, Xinyu, Wang, Xinhua, Kang, Xuanwu, Zhang, Jinhan, Fan, Jie, Shi, Jingyuan, Wei, Ke, Zheng, Yingkui, Gao, Hongwei, Sun, Qian, Wang, Maojun, Shen, Bo, Chen, Kevin J.

“…(Al)GaN recess-free normally OFF technology is developed for fabrication of high-yield lateral GaN-based power devices. The recess-free process is achieved by…”
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Design and fabrication of field-plated normally off β-Ga2O3 MOSFET with laminated-ferroelectric charge storage gate for high power application by Feng, Zhaoqing, Cai, Yuncong, Li, Zhe, Hu, Zhuangzhuang, Zhang, Yanni, Lu, Xing, Kang, Xuanwu, Ning, Jing, Zhang, Chunfu, Feng, Qian, Zhang, Jincheng, Zhou, Hong, Hao, Yue

“…In this work, an enhancement-mode (E-mode) β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) has been achieved by incorporating a…”
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High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure by Sen Huang, Xinyu Liu, Xinhua Wang, Xuanwu Kang, Jinhan Zhang, Qilong Bao, Ke Wei, Yingkui Zheng, Chao Zhao, Hongwei Gao, Qian Sun, Zhaofu Zhang, Chen, Kevin J.

“…Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF GaN metal- insulator-semiconductor high-electron-mobility…”
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CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon by Van Hove, M., Boulay, S., Bahl, S. R., Stoffels, S., Xuanwu Kang, Wellekens, D., Geens, K., Delabie, A., Decoutere, S.

“…We report on a novel Au-free CMOS process-compatible process for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors. The process starts…”
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Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures by Zhang, Jinhan, Kang, Xuanwu, Wang, Xinhua, Huang, Sen, Chen, Chen, Wei, Ke, Zheng, Yingkui, Zhou, Qi, Chen, Wanjun, Zhang, Bo, Liu, Xinyu

“…We report on the electrical and microstructural characterization of Au-free Ti/Al/Ti/TiN contacts for AlGaN/GaN heterostructures. Ultra-low Au-free ohmic…”
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Time-Dependent Breakdown Mechanisms and Reliability Improvement in Edge Terminated AlGaN/GaN Schottky Diodes Under HTRB Tests by Jie Hu, Stoffels, Steve, Ming Zhao, Tallarico, Andrea Natale, Rossetto, Isabella, Meneghini, Matteo, Xuanwu Kang, Bakeroot, Benoit, Marcon, Denis, Kaczer, Ben, Decoutere, Stefaan, Groeseneken, Guido

“…In this letter, we investigate the time-dependent breakdown mechanisms in edge terminated AlGaN/GaN lateral Schottky diodes under high-temperature reverse bias…”
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Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics by Sun, Yue, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Li, Pengfei, Wang, Wenbo, Liu, Xinyu, Zhang, Guoqi

“…The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was…”
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Facile integration of MoS2/SiC photodetector by direct chemical vapor deposition by Xiao, Yifan, Min, Long, Liu, Xinke, Liu, Wenjun, Younis, Usman, Peng, Tonghua, Kang, Xuanwu, Wu, Xiaohan, Ding, Shijin, Zhang, David Wei

“…The MoS photodetector on different substrates stacked via van der Waals force has been explored extensively because of its great potential in optoelectronics…”
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Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode by Zhang, Haitao, Kang, Xuanwu, Zheng, Yingkui, Wu, Hao, Wei, Ke, Liu, Xinyu, Ye, Tianchun, Jin, Zhi

“…This work investigates the transient characteristics of an AlGaN/GaN lateral Schottky barrier diode (SBD) and its recovery process with a dedicated dynamic…”
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Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode by Zhang, Haitao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Wu, Hao, Liu, Xinyu, Ye, Tianchun, Jin, Zhi

“…In this study, a dedicated dynamic measurement system was used to investigate the transient capacitance and recovery process of AlGaN/GaN lateral Schottky…”
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Fabrication and Performance of Au-Free AlGaN/GaN-on-Silicon Power Devices With and / Gate Dielectrics by Van Hove, Marleen, Xuanwu Kang, Stoffels, Steve, Wellekens, Dirk, Ronchi, Nicolo, Venegas, Rafael, Geens, Karen, Decoutere, Stefaan

“…Au-free GaN-based metal-insulator-semiconductor high electron-mobility transistors grown on 150-mm Si substrates are reported. The device characteristics for…”
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The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate by Tian-Li Wu, Marcon, Denis, De Jaeger, Brice, Van Hove, Marleen, Bakeroot, Benoit, Lin, Dennis, Stoffels, Steve, Xuanwu Kang, Roelofs, Robin, Groeseneken, Guido, Decoutere, Stefaan

“…The selection of the gate dielectric is one of the most critical stability issues in recessed gate AlGaN/GaN transistors. In this work, we show that the…”
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New source-side breakdown mechanism in AlGaN/GaN insulated-gate HEMTs by Bahl, Sandeep R., Van Hove, Marleen, Xuanwu Kang, Marcon, Denis, Zahid, Mohammed, Decoutere, Stefaan

“…We find that off-state breakdown in AlGaN/GaN insulated-gate HEMTs can occur at the source-side of the gate with increase in the drain voltage. This new…”
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Investigation of current collapse mechanism of LPCVD Si3N4 passivated AlGaN/GaN HEMTs by fast soft-switched current-DLTS and CC-DLTFS by Xinhua Wang, Xuanwu Kang, Jinhan Zhang, Ke Wei, Sen Huang, Xinyu Liu

“…In this work, we investigated the current collapse mechanism of AlGaN/GaN high-electron mobility transistors (HEMTs) with LPCVD Si 3 N 4 passivation. With…”
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Positive bias temperature instability evaluation in fully recessed gate GaN MIS-FETs by Tian-Li Wu, Franco, Jacopo, Marcon, Denis, De Jaeger, Brice, Bakeroot, Benoit, Xuanwu Kang, Stoffels, Steve, Van Hove, Marleen, Groeseneken, Guido, Decoutere, Stefaan

“…In this paper, positive bias temperature instability (PBTI) in fully recessed gate GaN MIS-FETs is studied by using an eMSM (extended Measure-Stress-Measure)…”
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Combined plasma-enhanced-atomic-layer-deposition gate dielectric and in situ SiN cap layer for reduced threshold voltage shift and dynamic ON-resistance dispersion of AlGaN/GaN high electron mobility transistors on 200 mm Si substrates by Ronchi, Nicolò, De Jaeger, Brice, Van Hove, Marleen, Roelofs, Robin, Wu, Tian-Li, Hu, Jie, Kang, Xuanwu, Decoutere, Stefaan

“…In this work we will present the experimental path followed to optimize the dynamic ON-resistance (RDS-ON) dispersion and to reduce the threshold voltage shift…”
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Fast Recovery Performance and Design Method for High-Power Microwave Limiter Using GaN-SBD Technology by Zhao, Rikang, Kang, Xuanwu, Zheng, Yingkui, Wu, Hao, Gao, Jianjun, Wei, Ke, Liu, Xinyu

“…In this article, we report a major breakthrough in the recovery performance of microwave high-power limiters achieved through the utilization of gallium…”
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High temperature behaviour of GaN-on-Si high power MISHEMT devices by Wellekens, D., Venegas, R., Xuanwu Kang, Zahid, M., Tian-Li Wu, Marcon, D., Srivastava, P., Van Hove, M., Decoutere, S.

“…The device performance of GaN-on-Si AlGaN/GaN MISHEMT devices with a Si 3 N 4 /Al 2 O 3 bi-layer gate dielectric is studied as a function of temperature. In…”
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High-Power Microwave Limiters Using Recess-Free AlGaN/GaN Schottky Barrier Diodes by Zhao, Rikang, Kang, Xuanwu, Zheng, Yingkui, Wu, Hao, Wei, Nan, Deng, Shixiong, Wei, Ke, Liu, Xinyu

“…In this letter, a thin-barrier AlGaN/GaN Schottky barrier diode (SBD) is proposed and implemented in a three-stage high-power RF limiter module. Benefited from…”
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