Search Results - "Xu, Shengqiang"

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  1. 1

    Multicenter phase II trial of Camrelizumab combined with Apatinib and Eribulin in heavily pretreated patients with advanced triple-negative breast cancer by Liu, Jieqiong, Wang, Ying, Tian, Zhenluan, Lin, Ying, Li, Hengyu, Zhu, Zhaowen, Liu, Qiang, Su, Shicheng, Zeng, Yinduo, Jia, Weijuan, Yang, Yaping, Xu, Shengqiang, Yao, Herui, Jiang, Wen, Song, Erwei

    Published in Nature communications (31-05-2022)
    “…In the later-line setting or for patients with PD-L1-negative tumors, immunotherapy-based regimens remain ineffective against advanced triple-negative breast…”
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  2. 2

    Intratumoral heterogeneity as a predictive biomarker in anti-PD-(L)1 therapies for non-small cell lung cancer by Fang, Wenfeng, Jin, Haoxuan, Zhou, Huaqiang, Hong, Shaodong, Ma, Yuxiang, Zhang, Yaxiong, Su, Xiaofan, Chen, Longyun, Yang, Yunpeng, Xu, Shengqiang, Liao, Yuwei, He, Yuming, Zhao, Hongyun, Huang, Yan, Gao, Zhibo, Zhang, Li

    Published in Molecular cancer (23-02-2021)
    “…The role of ITH in melanoma, esophageal and gastric cancer, head and neck cancer, and kidney cancer is acceptable, which will further expand the cancer types…”
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  3. 3

    High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform by Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia

    Published in Optics express (16-04-2018)
    “…We report the first demonstration of high-performance GeSn metal-semiconductor-metal (MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET)…”
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  4. 4

    Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate by Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia

    Published in IEEE transactions on electron devices (01-09-2018)
    “…Germanium-tin (GeSn) p-channel fin field-effect transistor (p-FinFET) was realized on a novel GeSn-on-insulator (GeSnOI) substrate. The high-quality GeSnOI…”
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  6. 6

    AIF downregulation and its interaction with STK3 in renal cell carcinoma by Xu, Shengqiang, Wu, Hongjin, Nie, Huan, Yue, Lei, Jiang, Huadong, Xiao, Sheng, Li, Yu

    Published in PloS one (03-07-2014)
    “…Apoptosis-inducing factor (AIF) plays a crucial role in caspase-independent programmed cell death by triggering chromatin condensation and DNA fragmentation…”
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  7. 7

    A Taylor expansion approach for solving partial differential equations with random Neumann boundary conditions by Xu, Shengqiang, Duan, Jinqiao

    Published in Applied mathematics and computation (01-08-2011)
    “…Nonlinear partial differential equation with random Neumann boundary conditions are considered. A stochastic Taylor expansion method is derived to simulate…”
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  8. 8

    Ribosomal protein RPL41 induces rapid degradation of ATF4, a transcription factor critical for tumour cell survival in stress by Wang, Aiyuan, Xu, Shengqiang, Zhang, Xiaoxian, He, Jie, Yan, Donghui, Yang, Zhangmin, Xiao, Sheng

    Published in The Journal of pathology (01-10-2011)
    “…By activating protective pathways, tumour cells are not only capable of survival in stress, but often associated with increased aggressiveness and metastasis…”
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  9. 9

    RPL41, a Small Ribosomal Peptide Deregulated in Tumors, Is Essential for Mitosis and Centrosome Integrity by Wang, Shan, Huang, Jianmin, He, Jie, Wang, Aiyuan, Xu, Shengqiang, Huang, Shiu-Feng, Xiao, Sheng

    Published in Neoplasia (New York, N.Y.) (01-03-2010)
    “…Ribosomal large subunit protein RPL41 is a basic (positively charged) peptide consisting of only 25 amino acids. An antisense-based functional screening…”
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  10. 10

    Strain relaxation of germanium-tin (GeSn) fins by Kang, Yuye, Huang, Yi-Chiau, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Masudy-Panah, Saeid, Dong, Yuan, Wu, Ying, Xu, Shengqiang, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia

    Published in AIP advances (01-02-2018)
    “…Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate…”
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  11. 11

    Expression profile of mouse Mterfd2, a novel component of the mitochondrial transcription termination factor (MTERF) family by Xu, QianQian, Zhang, FengWei, He, HongJuan, Xu, ShengQiang, Li, Kai, Liu, ShanShan, Li, Yu, Wu, Qiong

    Published in Genes & Genetic Systems (2011)
    “…Mterfd2 is a component of mitochondria transcription termination factor (MTERF) family which belongs to the MTERF4 subfamily. In this report, we characterized…”
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  12. 12

    High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrate by Xu, Shengqiang, Wang, Wei, Huang, Yi-Chiau, Dong, Yuan, Masudy-Panah, Saeid, Wang, Hong, Gong, Xiao, Yeo, Yee-Chia

    Published in Optics express (18-02-2019)
    “…We report high-speed photo detection at two-micron-wavelength achieved by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode, exhibiting a 3-dB bandwidth…”
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  13. 13

    High Field Temperature-Independent Field-Effect Mobility of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Downscaling by Han, Kaizhen, Samanta, Subhranu, Xu, Shengqiang, Wu, Ying, Gong, Xiao

    Published in IEEE transactions on electron devices (01-01-2021)
    “…We investigate the temperature dependence of field-effect mobility (<inline-formula> <tex-math notation="LaTeX">\mu _{eff} </tex-math></inline-formula>) on…”
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  14. 14

    A Route toward High-Detectivity and Low-Cost Short-Wave Infrared Photodetection: GeSn/Ge Multiple-Quantum-Well Photodetectors with a Dielectric Nanohole Array Metasurface by Chen, Qimiao, Zhou, Hao, Xu, Shengqiang, Huang, Yi-Chiau, Wu, Shaoteng, Lee, Kwang Hong, Gong, Xiao, Tan, Chuan Seng

    Published in ACS nano (11-07-2023)
    “…High-detectivity and low-cost short-wave infrared photodetectors with complementary metal–oxide–semiconductor (CMOS) compatibility are attractive for various…”
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  15. 15

    Germanium–tin (Ge 1–x Sn x ) photodetectors for 2 μm wavelength band by Gong, Xiao, Dong, Yuan, Xu, Shengqiang, Wang, Wei

    Published in Japanese Journal of Applied Physics (01-05-2021)
    “…Abstract Germanium–Tin (Ge 1– x Sn x ) alloy, due to its attractive and interesting properties, is promising for many applications in photonic devices and…”
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  16. 16

    Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth by Dong, Yuan, Wang, Wei, Xu, Shengqiang, Lei, Dian, Gong, Xiao, Guo, Xin, Wang, Hong, Lee, Shuh-Ying, Loke, Wan-Khai, Yoon, Soon-Fatt, Yeo, Yee-Chia

    Published in Optics express (10-07-2017)
    “…We report the demonstration of a germanium-tin (Ge Sn ) multiple-quantum-well p-i-n photodiode on silicon (Si) substrate for 2 μm-wavelength light detection…”
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  17. 17

    Ge0.95Sn0.05 Gate-All-Around p‑Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub‑3 nm Nanowire Width by Kang, Yuye, Xu, Shengqiang, Han, Kaizhen, Kong, Eugene Y.-J, Song, Zhigang, Luo, Sheng, Kumar, Annie, Wang, Chengkuan, Fan, Weijun, Liang, Gengchiau, Gong, Xiao

    Published in Nano letters (14-07-2021)
    “…We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (W NW) on a GeSn-on-insulator (GeSnOI)…”
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  18. 18

    Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate by Zhou, Hao, Xu, Shengqiang, Wu, Shaoteng, Huang, Yi-Chiau, Zhao, Peng, Tong, Jinchao, Son, Bongkown, Guo, Xin, Zhang, Daohua, Gong, Xiao, Tan, Chuan Seng

    Published in Optics express (09-11-2020)
    “…A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark…”
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  19. 19

    Low Subthreshold Swing and High Mobility Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor With Thin HfO2 Gate Dielectric and Excellent Uniformity by Samanta, Subhranu, Chand, Umesh, Xu, Shengqiang, Han, Kaizhen, Wu, Ying, Wang, Chengkuan, Kumar, Annie, Velluri, Hasita, Li, Yida, Fong, Xuanyao, Thean, Aaron Voon-Yew, Gong, Xiao

    Published in IEEE electron device letters (01-06-2020)
    “…We report high performance amorphous Indium-Gallium-Zinc-Oxide (<inline-formula> <tex-math notation="LaTeX">{a} </tex-math></inline-formula>-IGZO) thin-film…”
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  20. 20

    High-Performance Back-Illuminated Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection by Wu, Shaoteng, Xu, Shengqiang, Zhou, Hao, Jin, Yuhao, Chen, Qimiao, Huang, Yi-Chiau, Zhang, Lin, Gong, Xiao, Tan, Chuan Seng

    “…Recently, high-performance GeSn photodiodes (PDs) with external light illuminated on the device's top surface have been demonstrated on various platforms…”
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