Search Results - "Xu, P.S."

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  1. 1

    The electronic structure and spectral properties of ZnO and its defects by Xu, P.S., Sun, Y.M., Shi, C.S., Xu, F.Q., Pan, H.B.

    “…The electronic structure of ZnO and its defects, which include intrinsic point defects and their complexes, have been calculated using full-potential linear…”
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    Journal Article
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    Improved energy storage performance of BST‒BNT ceramics via composition modification by Hu, Y.C., Dang, S.T., Cao, J.Q., Zhang, W.L., Zai, Y.J., Xu, P.S., Wang, X.W.

    Published in Solid state communications (01-03-2023)
    “…Lead-free relaxor ferroelectrics are a promising material owing to their excellent energy storage performance. In this work, a new lead-free ceramic system was…”
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    Journal Article
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    The optimization of a self-focusing e-beam evaporator for carbon evaporation and the application for graphene growth by Chen, S., Fan, L.L., Wang, J., Pan, Y., Chen, F.H., Xu, P.S., Zou, C.W., Wu, Z.Y.

    Published in Surface & coatings technology (15-11-2014)
    “…A self-focusing e-beam evaporator for carbon flux source in a molecular beam epitaxy (MBE) system has been designed and optimized. It is found that the…”
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    Journal Article
  5. 5

    Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms by Tang, J., Kang, C.Y., Li, L.M., Yan, W.S., Wei, S.Q., Xu, P.S.

    “…Graphene films were grown on Si(1 1 1) substrates at different temperatures (600, 700 and 800 °C) by directly depositing solid-state carbon atoms through…”
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  6. 6

    Effects of SiC buffer on the structural and photoelectrical properties of ZnO thin films grown on Si(1 1 1) by PLD by Zhao, C.Y., Liu, Z.R., Sun, B., Tang, J., Xu, P.S., Xie, J.C.

    “…The films of ZnO/SiC/Si(1 1 1) and ZnO/Si(1 1 1) were grown by the pulsed-laser-deposition (PLD) technique and were processed to fabricate ultraviolet (UV)…”
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    Photoemission studies of initial oxidation for ultra-thin zinc film on 6H-SiC(0 0 0 1) surface with synchrotron radiation by Zou, C.W., Wu, Y.Y., Sun, B., Xu, P.S., Pan, H.B., Xu, F.Q.

    Published in Applied surface science (15-02-2007)
    “…The thermal oxidation process of metallic zinc on 6H-SiC(0 0 0 1) surface has been investigated by using atomic force microscopy (AFM), synchrotron radiation…”
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    Journal Article
  9. 9

    Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(1 0 0) interface with synchrotron radiation by Sun, M.H., Zhao, T.X., Jia, C.Y., Xu, P.S., Lu, E.D., Hsu, C.C., Ji, Hang

    Published in Applied surface science (15-08-2005)
    “…The adsorption of K on the n-GaAs(1 0 0) surface was investigated by X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoemission…”
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  10. 10

    Initial interface study of Au deposition on GaN(0 0 0 1) by Zou, C.W., Sun, B., Wang, G.D., Zhang, W.H., Xu, P.S., Pan, H.B., Xu, F.Q.

    Published in Physica. B, Condensed matter (15-12-2005)
    “…Synchrotron radiation photoelectron spectroscopy (SRPES) has been used to study the electronic structure of the Au/GaN(0 0 0 1) system at the initial growth…”
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    Journal Article
  11. 11

    Optimization of a variable-angle spherical grating monochromator by Yu, X.J., Wang, Q.P., Lu, L.J., Pan, H.B., Xu, F.Q., Xu, P.S.

    “…A beamline covering photon energy of 10–300 eV is now under construction in National Synchrotron Radiation Laboratory. The monochromator, optimized for maximum…”
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    Journal Article
  12. 12

    The chemistry, structure and stability of CH 3CSNH 2 passivated GaAs(100) surfaces by Lu, E.D., Xu, F.Q., Sun, Y.M., Pan, H.B., Zhang, F.P., Xu, P.S., Zhang, X.Y.

    “…An organic sulfide, CH 3CSNH 2 treated sulfur-passivated GaAs(100), has been studied using synchrotron radiation photo-emission spectroscopy (SRPES), Auger…”
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  13. 13

    The progress of SR study on the passivation of semiconductor surface in NSRL by Xu, P.S., Zhang, F.P., Lu, E.D., Xu, F.Q., Pan, H.B., Zhang, X.Y.

    “…A new sulfur passivation method for GaAs by using CH 3CSNH 2 has been developed. Its passivation mechanics have been studied. The sulfide passivation layer can…”
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  14. 14

    Synchrotron radiation photoelectron spectroscopy study of ITO surface by Lai, B, Ding, X.M, Yuan, Z.L, Zhou, X, Liao, L.S, Zhang, S.K, Yuan, S, Hou, X.Y, Lu, E.D, Xu, P.S, Zhang, X.Y

    Published in Applied surface science (01-03-2000)
    “…Synchrotron radiation photoelectron spectroscopy (SRPES) has been applied to surface analysis of indium tin oxide (ITO) thin films. Several different…”
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    Journal Article
  15. 15

    Growth and magnetic properties of Fe overlayer on S-passivated GaAs substrate by Zhang, F.P, Xu, P.S, Lu, E.D, Guo, H.Z, Xu, F.Q, Zhang, X.Y

    Published in Thin solid films (31-10-2000)
    “…We have produced epitaxial Fe overlayers on S-passivated GaAs(100) surfaces by CH 3CSNH 2 treatment. The correlation between magnetic properties of the…”
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    Journal Article Conference Proceeding
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    Studies of interface formation between Co with GaAs(100) and S-passivated GaAs(100) by Zhang, F.P, Xu, P.S, Zhu, C.G, Lu, E.D, Guo, H.Z, Xu, F.Q, Zhang, X.Y

    “…Interface formation between Co with GaAs(100) and S-passivated GaAs(100) by CH 3CSNH 2 treatment has been studied with synchrotron radiation photoemission…”
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    Journal Article
  17. 17

    Electronic structure of the Mn/Cd 0.96Zn 0.04Te(111) interface studied by synchrotron radiation by Xu, P.S., Yang, F.Y., Xu, S.H., Lu, E.D., Yu, X.J., Fang, R.C.

    “…The formation and electronic structure of Mn/Cd 0.96Zn 0.04Te(111) have been investigated by photoemission with synchrotron radiation. It is determined that Mn…”
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  18. 18

    Interfaces of Mg and MgOx films with GaAs(100) substrate studied by synchrotron radiation photoemission by Xu, F.Q., Lu, E.D., Sun, Y.M., Pan, H.B., Xu, P.S., Zhang, X.Y.

    “…The interaction of ultrathin Mg and MgOx films with the GaAs(100) semiconductor substrate was investigated using synchrotron radiation photoemission. The…”
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    Interface formation and interaction of Fe overlayer on S-passivated GaAs(100) by Xu, P.S, Zhu, C.G, Zhang, F.P, Xu, F.Q, Lu, E.D, Pan, H.B, Zhang, X.Y

    “…We have studied the interface formation and electronic structure of an Fe overlayer deposited on S-passivated GaAs(100). In the first stage of deposition, Fe…”
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    Journal Article
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    An unexpected electronic structure of Gd by Sun, Y.M, Xu, P.S, Xu, F.Q, Lu, E.D, Zhang, F.P, Pan, H.B, Zhang, X.Y

    “…Contradictory results are obtained when Gd is deposited on S–GaP(100) and GaAs(100) substrates, respectively. The Gd4f spectra from Gd/S–GaP show single peaks…”
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