Search Results - "Xu, P.S."
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The electronic structure and spectral properties of ZnO and its defects
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (2003)“…The electronic structure of ZnO and its defects, which include intrinsic point defects and their complexes, have been calculated using full-potential linear…”
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2
Improved energy storage performance of BST‒BNT ceramics via composition modification
Published in Solid state communications (01-03-2023)“…Lead-free relaxor ferroelectrics are a promising material owing to their excellent energy storage performance. In this work, a new lead-free ceramic system was…”
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The chemistry, structure and stability of CH3CSNH2 passivated GaAs(100) surfaces
Published in Journal of electron spectroscopy and related phenomena (01-06-1999)Get full text
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4
The optimization of a self-focusing e-beam evaporator for carbon evaporation and the application for graphene growth
Published in Surface & coatings technology (15-11-2014)“…A self-focusing e-beam evaporator for carbon flux source in a molecular beam epitaxy (MBE) system has been designed and optimized. It is found that the…”
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5
Graphene films grown on Si substrate via direct deposition of solid-state carbon atoms
Published in Physica. E, Low-dimensional systems & nanostructures (01-06-2011)“…Graphene films were grown on Si(1 1 1) substrates at different temperatures (600, 700 and 800 °C) by directly depositing solid-state carbon atoms through…”
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6
Effects of SiC buffer on the structural and photoelectrical properties of ZnO thin films grown on Si(1 1 1) by PLD
Published in Physica. E, Low-dimensional systems & nanostructures (2009)“…The films of ZnO/SiC/Si(1 1 1) and ZnO/Si(1 1 1) were grown by the pulsed-laser-deposition (PLD) technique and were processed to fabricate ultraviolet (UV)…”
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7
Photoemission study of the initial oxidation of
Published in Journal of electron spectroscopy and related phenomena (01-03-2006)Get full text
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8
Photoemission studies of initial oxidation for ultra-thin zinc film on 6H-SiC(0 0 0 1) surface with synchrotron radiation
Published in Applied surface science (15-02-2007)“…The thermal oxidation process of metallic zinc on 6H-SiC(0 0 0 1) surface has been investigated by using atomic force microscopy (AFM), synchrotron radiation…”
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Photoemission study of chemisorption and Fermi-level pinning at K/GaAs(1 0 0) interface with synchrotron radiation
Published in Applied surface science (15-08-2005)“…The adsorption of K on the n-GaAs(1 0 0) surface was investigated by X-ray photoelectron spectroscopy (XPS) and synchrotron radiation photoemission…”
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10
Initial interface study of Au deposition on GaN(0 0 0 1)
Published in Physica. B, Condensed matter (15-12-2005)“…Synchrotron radiation photoelectron spectroscopy (SRPES) has been used to study the electronic structure of the Au/GaN(0 0 0 1) system at the initial growth…”
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11
Optimization of a variable-angle spherical grating monochromator
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (21-07-2001)“…A beamline covering photon energy of 10–300 eV is now under construction in National Synchrotron Radiation Laboratory. The monochromator, optimized for maximum…”
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12
The chemistry, structure and stability of CH 3CSNH 2 passivated GaAs(100) surfaces
Published in Journal of electron spectroscopy and related phenomena (1999)“…An organic sulfide, CH 3CSNH 2 treated sulfur-passivated GaAs(100), has been studied using synchrotron radiation photo-emission spectroscopy (SRPES), Auger…”
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13
The progress of SR study on the passivation of semiconductor surface in NSRL
Published in Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment (2001)“…A new sulfur passivation method for GaAs by using CH 3CSNH 2 has been developed. Its passivation mechanics have been studied. The sulfide passivation layer can…”
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14
Synchrotron radiation photoelectron spectroscopy study of ITO surface
Published in Applied surface science (01-03-2000)“…Synchrotron radiation photoelectron spectroscopy (SRPES) has been applied to surface analysis of indium tin oxide (ITO) thin films. Several different…”
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15
Growth and magnetic properties of Fe overlayer on S-passivated GaAs substrate
Published in Thin solid films (31-10-2000)“…We have produced epitaxial Fe overlayers on S-passivated GaAs(100) surfaces by CH 3CSNH 2 treatment. The correlation between magnetic properties of the…”
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Journal Article Conference Proceeding -
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Studies of interface formation between Co with GaAs(100) and S-passivated GaAs(100)
Published in Journal of electron spectroscopy and related phenomena (01-06-1999)“…Interface formation between Co with GaAs(100) and S-passivated GaAs(100) by CH 3CSNH 2 treatment has been studied with synchrotron radiation photoemission…”
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17
Electronic structure of the Mn/Cd 0.96Zn 0.04Te(111) interface studied by synchrotron radiation
Published in Journal of electron spectroscopy and related phenomena (1996)“…The formation and electronic structure of Mn/Cd 0.96Zn 0.04Te(111) have been investigated by photoemission with synchrotron radiation. It is determined that Mn…”
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18
Interfaces of Mg and MgOx films with GaAs(100) substrate studied by synchrotron radiation photoemission
Published in Journal of electron spectroscopy and related phenomena (01-06-1999)“…The interaction of ultrathin Mg and MgOx films with the GaAs(100) semiconductor substrate was investigated using synchrotron radiation photoemission. The…”
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Interface formation and interaction of Fe overlayer on S-passivated GaAs(100)
Published in Journal of electron spectroscopy and related phenomena (01-06-1999)“…We have studied the interface formation and electronic structure of an Fe overlayer deposited on S-passivated GaAs(100). In the first stage of deposition, Fe…”
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An unexpected electronic structure of Gd
Published in Journal of electron spectroscopy and related phenomena (01-06-1999)“…Contradictory results are obtained when Gd is deposited on S–GaP(100) and GaAs(100) substrates, respectively. The Gd4f spectra from Gd/S–GaP show single peaks…”
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