Search Results - "Xu, M.W"

Self-heating induced soft degradation of the Early voltage in SiGe:C HBTs by Xu, M.W., Sibaja-Hernandez, A., Sadovnikov, A., Decoutere, S.

“…A soft degradation of the Early voltage measured in a constant V/sub be/ forced mode in SiGe:C HBTs is observed, which occurs at collector current levels far…”
Get full text

Electrochemical performance of Ba2Co9O14+SDC composite cathode for intermediate-temperature solid oxide fuel cells by Li, Yan, Xu, M.W., Goodenough, John B.

“…► A 50–50 Ba2Co9O14 (BCO)+Sm0.2Ce0.8O1.9 (SDC) composite was evaluated as a cathode for an IT SOFC. ► The composite serves two functions: improved electrolyte…”
Get full text

Protein splicing involving the Saccharomyces cerevisiae VMA intein. The steps in the splicing pathway, side reactions leading to protein cleavage, and establishment of an in vitro splicing system by Chong, S. (New England Biolabs, Beverly, MA.), Shao, Y, Paulus, H, Benner, J, Perler, F.B, Xu, M.W

“…Protein splicing involves the excision of an internal protein segment, the intein, from a precursor protein and the concomitant ligation of the flanking N- and…”
Get full text

Reliable 2-D carrier profiling with SSRM on InP-based devices by Xu, M.W., Hantschel, T., Vandervorst, W.

“…Reliable application of SSRM on InP-based devices requires the use of particular probes. The application of a pyramid metal probe on InP-based device is…”
Get full text

High resolution electrical characterization of laterally overgrown epitaxial InP by Anand, S., Sun, Y.T., Lourdudoss, S., Xu, M.W., Vandervorst, W.

“…Dopant incorporation in epitaxial lateral over-growth of InP is investigated by scanning capacitance microscopy (SCM) and scanning spreading resistance…”
Get full text

Ultra low power SiGe:C HBT for 0.18 /spl mu/m RF-BiCMOS by Xu, M.W., Decoutere, S., Sibaja-Hernandez, A., Van Wichelen, K., Witters, L., Loo, R., Kunnen, E., Knorr, C., Sadovnikov, A., Bulucea, C.

“…A SiGe:C HBT in 0.18 /spl mu/m BiCMOS is developed for ultra low power applications based on a unique optimization solution, including a dedicated PIN e/b…”
Get full text

Lateral and vertical scaling of a QSA HBT for a 0.13/spl mu/m 200GHz SiGe:C BiCMOS technology by Van Huylenbroeck, S., Sibaja-Hernandez, A., Piontek, A., Choi, L.J., Xu, M.W., Ouassif, N., Vleugels, F., Van Wichelen, K., Witters, L., Kunnen, E., Leray, P., Devriendt, K., Shi, X., Loo, R., Decoutere, S.

“…A 200 GHz F/sub t/ SiGe:C HBT has been integrated into a 0.13 /spl mu/m BiCMOS technology. A previous generation low complexity quasi self-aligned architecture…”
Get full text