Search Results - "Xing, Z.G."

Investigation of characteristics of laterally overgrown GaN on striped sapphire substrates patterned by wet chemical etching by Wang, Jing, Guo, L.W., Jia, H.Q., Xing, Z.G., Wang, Y., Yan, J.F., Yu, N.S., Chen, H., Zhou, J.M.

“…The new developed maskless lateral-epitaxial-overgrowth technique, in which the striped substrates are patterned by wet chemical etching, is systematically…”
Get full text

Lateral epitaxial overgrowth of GaN films on patterned sapphire substrates fabricated by wet chemical etching by Wang, Jing, Guo, L.W., Jia, H.Q., Xing, Z.G., Wang, Y., Chen, H., Zhou, J.M.

“…A promising technique of lateral epitaxial overgrowth, namely CantiBridge epitaxy, is developed and demonstrated in order to reduce the threading dislocation…”
Get full text

Interfacial energy between γ/γ′ phases of Ni–Al alloys extracted by using a new method by Liang, S.X., Liu, K.Y., Zhou, Y.X., Yin, L.X., Shi, Y.D., Zheng, L.Y., Xing, Z.G.

“…The interfacial energy greatly affects the size and morphology of precipitates which are the key influencing factors of properties. Thus, research on…”
Get full text

Effects and mechanism of lipoic acid on beta-amyloid-intoxicated C6 glioma cells by Xing, Z G, Yu, G D, Qin, L, Jiang, F, Zhao, W H

“…β-amyloid peptides (Aβs) can exert neurotoxic effects through induction of oxidative damage, whereas lipoic acid (LA), a powerful antioxidant, can alleviate…”
Get full text

Characteristics of the improved a-plane GaN films grown on r-plane sapphire with two-step AlN buffer layer by Yan, J.F., Guo, L.W., Zhang, J., Zhu, X.L., Ding, G.J., Xing, Z.G., Zhou, Z.T., Pei, X.J., Wang, Y., Jia, H.Q., Chen, H., Zhou, J.M.

“…Structural, electrical and optical properties of an improved a-plane GaN films grown on ( 1 1 ¯ 0 2 ) r-plane sapphire by metalorganic chemical vapor…”
Get full text

Near ultraviolet InGaN/GaN MQWs grown on maskless periodically grooved sapphire substrates fabricated by wet chemical etching by Yu, N.S., Guo, L.W., Chen, H., Xing, Z.G., Ge, B.H., Wang, J., Zhu, X.L., Peng, M.Z., Yan, J.F., Jia, H.Q., Zhou, J.M.

“…In the paper, we describe the fabrication and characteristics of near ultraviolet InGaN/GaN multiple quantum wells (MQWs) grown on maskless periodically…”
Get full text

High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 {mu}m grown by molecular-beam epitaxy by Wang, S.M., Gu, Q.F., Wei, Y.Q., Sadeghi, M., Larsson, A., Zhao, Q.X., Wang, X.D., Ma, C.H., Xing, Z.G., Physical Electronics and Photonics, Department of Physics, Goeteborg University, 41296 Goeteborg, Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing, State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, P.O. Box 603, 100080 Beijing

“…High-quality GaNAs/GaAs quantum wells with high substitutional N concentrations, grown by molecular-beam epitaxy, are demonstrated using a reduced growth rate…”
Get full text

Influence of threading dislocations on the properties of InGaN-based multiple quantum wells by Yu, H.B., Chen, H., Li, Dongsheng, Wang, J., Xing, Z.G., Zheng, X.H., Huang, Q., Zhou, J.M.

“…The relationship of the threading dislocations (TDs) and InGaN-based quantum well (QW) optical characteristics is studied by temperature-dependent…”
Get full text