Search Results - "Xie, Xuejian"

Research progress of large size SiC single crystal materials and devices by Chen, Xiufang, Yang, Xianglong, Xie, Xuejian, Peng, Yan, Xiao, Longfei, Shao, Chen, Li, Huadong, Hu, Xiaobo, Xu, Xiangang

“…SiC semiconductor is the focus of recent international research. It is also an important raw material for China to achieve carbon emission peak and carbon…”
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Association between leukocyte mitochondrial DNA content and risk of coronary heart disease: A case-control study by Chen, Shuying, Xie, Xuejian, Wang, Yujing, Gao, Yan, Xie, Xiaoli, Yang, Jing, Ye, Jixian

“…Abstract Objective Compelling epidemiological evidence indicates that alterations of mitochondrial DNA (mtDNA), including mutations and abnormal content of…”
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Comparison of Measurements with Finite-Element Analysis of Silicon-Diaphragm-Based Fiber-Optic Fabry-Perot Temperature Sensors by Wang, Rongkun, Xie, Xuejian, Xu, Xiangang, Chen, Xiufang, Xiao, Longfei

“…Silicon-diaphragm-based fiber-optic Fabry-Perot sensors with different intracavity pressures were fabricated by anodic bonding and microelectromechanical…”
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Micropipes in SiC Single Crystal Observed by Molten KOH Etching by Wang, Hejing, Yu, Jinying, Hu, Guojie, Peng, Yan, Xie, Xuejian, Hu, Xiaobo, Chen, Xiufang, Xu, Xiangang

“…Micropipe, a “killer” defect in SiC crystals, severely hampers the outstanding performance of SiC-based devices. In this paper, the etching behavior of…”
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Screening active components from Yu-ping-feng-san for regulating initiative key factors in allergic sensitization by Shen, Dandan, Xie, Xuejian, Zhu, Zhijie, Yu, Xi, Liu, Hailiang, Wang, Huizhu, Fan, Hongwei, Wang, Dawei, Jiang, Guorong, Hong, Min

“…Yu-ping-feng-san (YPFS) is a Chinese medical formula that is used clinically for allergic diseases and characterized by reducing allergy relapse. Our previous…”
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Synthesis and Characterization of Amorphous Molybdenum Sulfide (MoSx)/CdIn2S4 Composite Photocatalyst: Co-Catalyst Using in the Hydrogen Evolution Reaction by Qi Li, Wanli Liu, Xuejian Xie, Xianglong Yang, Xiufang Chen, Xiangang Xu

“…Co-catalyst deposition is used to improve the surface and electrical properties of photocatalysts. In this work, MoSx/CdIn2S4 nanocomposites were prepared by a…”
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Influence of Nitrogen Concentrations on the Lattice Constants and Resistivities of n‑Type 4H-SiC Single Crystals by Cui, Yingxin, Hu, Xiaobo, Yang, Kun, Yang, Xianglong, Xie, Xuejian, Xiao, Longfei, Xu, Xiangang

“…4H-SiC single crystals with different nitrogen doping concentrations were grown by sublimation method. After processing, the standard 4H-SiC substrates were…”
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Effects of All-Trans Retinoic Acid on Lipopolysaccharide-Induced Synovial Explant by LU, Kuiqing, BAO, Qilin, WANG, Dan, NING, Yanhua, XIE, Xuejian, ZHOU, Mingming, ZHOU, Linhua, ZENG, Xiang, SHAN, Jingyan, LI, Yun

“…The present study was conducted to assess the effect of all-trans retinoic acid (ATRA) on synovial explants from rats with rheumatoid arthritis (RA) induced by…”
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Basal Plane Bending of Homoepitaxial MPCVD Single-Crystal Diamond by Han, Xiaotong, Duan, Peng, Peng, Yan, Wang, Xiwei, Xie, Xuejian, Yu, Jinying, Hu, Xiufei, Wang, Dufu, Hu, Xiaobo, Xu, Xiangang

“…We report herein high-resolution X-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). We define SCD (100) as…”
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Research Progress in Capping Diamond Growth on GaN HEMT: A Review by Wang, Yingnan, Hu, Xiufei, Ge, Lei, Liu, Zonghao, Xu, Mingsheng, Peng, Yan, Li, Bin, Yang, Yiqiu, Li, Shuqiang, Xie, Xuejian, Wang, Xiwei, Xu, Xiangang, Hu, Xiaobo

“…With the increased power density of gallium nitride (GaN) high electron mobility transistors (HEMTs), effective cooling is required to eliminate the…”
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Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC by Sun, Li, Wang, Peng, Xie, Xuejian, Chen, Xiufang, Yu, Fapeng, Li, Yanlu, Xu, Xiangang, Zhao, Xian

“…Epitaxial graphene on SiC without substrate interaction is viewed as one of the most promising two-dimensional (2D) materials in the microelectronics field. In…”
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Reduction of dislocation density of SiC crystals grown on seeds after H2 etching by Xiufang Chen, Fusheng Zhang, Xianglong Yang, Yan Peng, Xuejian Xie, Tian Li, Xiaobo Hu, Xiangang Xu, Guanglei Li, Ruiqi Wang

“…Three-inch 6H-SiC bulk crystals were grown by the PVT method on the seeds processed by different treatments. The influences of seed surface morphology and…”
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Correlation between the response performance of epitaxial graphene/SiC UV-photodetectors and the number of carriers in graphene by Li, Xiaomeng, Wang, Rongkun, Zuo, Zhiyuan, Ge, Lei, Chen, Xiufang, Xie, Xuejian, Xiao, Longfei, Peng, Yan, Xu, Xiangang, Hu, Xiaobo

“…Metal-Graphene-Metal (MGM) UV photodetectors have been fabricated by using an Epitaxial Graphene (EG)/SiC junction on a semi-insulating 4H–SiC. The migration…”
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Hot-zone design and optimization of resistive heater for SiC single crystal growth by Wang, Xinglong, Xie, Xuejian, Yu, Wancheng, Yang, Xianglong, Chen, Xiufang, Li, Xiaomeng, Sun, Li, Peng, Yan, Hu, Xiaobo, Xu, Xiangang

“…In recent years, SiC single crystal growth technology has been developed toward larger size and thickness to reduce the cost of SiC-based power devices…”
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Self-powered epitaxial graphene/SiC-C heterojunction UV photodetector by Chen, Huiqing, Shao, Chen, Li, Xiaomeng, Chen, Xiufang, Wang, Rongkun, Xiao, Longfei, Li, Yangfan, Xu, Mingsheng, Yang, Xianglong, Xie, Xuejian, Xu, Xiangang

“…In this paper, local oxygen plasma treatment of SiC carbon surface epitaxial graphene (EG/SiC-C) samples was carried out by using an oxygen plasma processor…”
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Sublimation growth and property characterization of p-type 4H-SiC by Al B co-doping technique by Xie, Xuejian, Sun, Li, Chen, Xiufang, Yang, Xianglong, Hu, Xiaobo, Xu, Xiangang

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Effect of basal plane bending on the atomic step morphology of the 4H–SiC substrate surface by Shao, Chen, Guo, Fenglin, Chen, Xiufang, Li, Xiaomeng, Yu, Wancheng, Yang, Xianglong, Xie, Xuejian, Hu, Xiaobo, Xu, Xiangang

“…The atomic step morphology of the SiC (0001) surface is determined by the crystal structure of SiC and reflects the real crystal morphology of the SiC…”
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Influence of Net Doping Concentration on Carrier Lifetime in 4H-SiC Substrates by Shao, Hongyu, Yang, Xianglong, Wang, Desheng, Li, Xiaomeng, Chen, Xiufang, Hu, Guojie, Li, Huadong, Xiong, Xixi, Xie, Xuejian, Hu, Xiaobo, Xu, Xiangang

“…Lightly nitrogen-doped (N-doped) and vanadium-doped (V-doped) 4H-SiC single crystals grown by physical vapor transport were used to investigate the effect of…”
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Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field by Hu, Guojie, Zhong, Guanglei, Xiong, Xixi, Li, Huadong, Shao, Hongyu, Zhao, Laibin, Li, Xiaomeng, Yang, Xianglong, Chen, Xiufang, Xie, Xuejian, Peng, Yan, Yu, Guojian, Hu, Xiaobo, Xu, Xiangang

“…8-inch N-type 4H–SiC single crystals were grown on 4° off-axis seeds by the physical vapor transport (PVT) method. The electrical properties of 8-inch 4H–SiC…”
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Dislocation proliferation at the growth crystal/seed interface of physical vapor transport-grown 4H-SiC crystals by Li, Huadong, Yang, Xianglong, Jiang, Xiaocheng, Shao, Hongyu, Hu, Guojie, Li, Xiaomeng, Peng, Yan, Chen, Xiufang, Hu, Xiaobo, Xie, Xuejian, Yu, Guojian, Xu, Xiangang

“…Abstract 4H-SiC single crystal with [000 1 ¯ ] direction 4° off axis was prepared by physical vapor transfer method. To enlarge the observed interface area…”
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