Search Results - "Xiaojuen Yuan"

Formulation and validation of Berenger's PML absorbing boundary for the FDTD simulation of acoustic scattering by Xiaojuen Yuan, Borup, D., Wiskin, J.W., Berggren, M., Eidens, R., Johnson, S.A.

“…Berenger's perfectly matched layer (PML) absorbing boundary condition for electromagnetic (EM) waves is derived to absorb 2-D and 3-D acoustic waves in finite…”
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Simulation of acoustic wave propagation in dispersive media with relaxation losses by using FDTD method with PML absorbing boundary condition by Xiaojuen Yuan, Borup, D., Wiskin, J., Berggren, M., Johnson, S.A.

“…We present a method to incorporate the relaxation dominated attenuation into the finite-difference time-domain (FDTD) simulation of acoustic wave propagation…”
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Demonstration of a SiGe RF LNA design using IBM design kits in 0.18 /spl mu/m SiGe BiCMOS technology by Yiming Chen, Xiaojuen Yuan, Scagnelli, D., Mecke, J., Gross, J., Harame, D.

“…A 1.5 GHz-2.0 GHz low noise amplifier (LNA) is designed in IBM 0.18 um BiCMOS technology using IBM design kits in cadence design flow. The fabricated LNA chip…”
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Design and modeling of a high-Q on-chip hairpin inductor for RFIC applications by Wan Ni, Xiaojuen Yuan, Tretiakov, Y.V., Groves, R., Larsona, L.E.

“…The design and modeling of a high Q hairpin inductor is presented. The inductor is designed and fabricated using the thick top-level metal (4um thickness, 14um…”
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"RF-SoC": low-power single-chip radio design using Si/SiGe BiCMOS technology by Lie, D.Y.C., Xiaojuen Yuan, Larson, L.E., Wang, Y.H., Senior, A., Mecke, J.

“…The integration level of RFICs has exhibited considerable progress during the last decade. Si-based single-chip GSM, Bluetooth and DECT transceivers have been…”
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RF linearity study of SiGe HBTs for low power RFIC design. I by Xiaojuen Yuan, Lie, D.Y.C., Larson, L.E., Blonski, J., Gross, J., Kumar, M., Mecke, J., Senior, A., Chen, Y., Poh, A., Harame, D.

“…The RF linearity characteristics of a 0.2 /spl mu/m/120 GHz f/sub T/ silicon germanium (SiGe) heterojunction bipolar transistor (HBT) are analyzed using a…”
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Finite-difference time-domain modeling of acoustic and electromagnetic wave scattering by Yuan, Xiaojuen

“…The finite-difference time-domain method (FDTD) is one of the most powerful numerical methods for both acoustic and electromagnetic simulations. It is also one…”
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Finite-difference time-domain modeling of acoustic and electromagnetic wave scattering by Yuan, Xiaojuen

“…The finite-difference time-domain method (FDTD) is one of the most powerful numerical methods for both acoustic and electromagnetic simulations. It is also one…”
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Design and modeling of a high-Q on-chip hairpin inductor for RFIC applications by Wan Ni, Xiaojuen Yuan, Tretiakov, Y.V., Groves, R., Larson, L.E.

“…The design and modeling of a high Q hairpin inductor is presented. The inductor is designed and fabricated using the thick top-level metal (4/spl mu/m…”
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Demonstration of a SiGe RF LNA Design Using IBM Design Kits in 0.18um SiGe BiCMOS Technology by Chen, Yiming, Yuan, Xiaojuen, Scagnelli, David, Mecke, James, Gross, Jeff, Harame, David

“…A 1.5GHz-2.0GHz Low Noise Amplifier (LNA) is designed in IBM 0.18um BiCMOS technology using IBM design kits in Cadence Design Flow. The fabricated LNA chip is…”
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Meeting the design challenges in modern RFCMOS technology by Xudong Wang, Pekarik, J., Xiaojuen Yuan, Raghunadha Anna, Parker, S.

“…This paper describes the challenges of designing RF integrated circuits using the advanced RFCMOS technology. Following an overview of the RFCMOS process,…”
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