Search Results - "Xiang, Jinjuan"

Electric Field Gradient‐Controlled Domain Switching for Size Effect‐Resistant Multilevel Operations in HfO2‐Based Ferroelectric Field‐Effect Transistor by Zeng, Binjian, Liu, Chen, Dai, Siwei, Zhou, Pingan, Bao, Keyu, Zheng, Shuaizhi, Peng, Qiangxiang, Xiang, Jinjuan, Gao, Jianfeng, Zhao, Jie, Liao, Min, Zhou, Yichun

“…The ferroelectric field‐effect transistor (FeFET) is a promising memory technology due to its high switching speed, low power consumption, and high capacity…”
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Experimental Extraction and Simulation of Charge Trapping During Endurance of FeFET With TiN/HfZrO/SiO2/Si (MFIS) Gate Structure by Zhao, Shujing, Tian, Fengbin, Xu, Hao, Xiang, Jinjuan, Li, Tingting, Chai, Junshuai, Duan, Jiahui, Han, Kai, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun

“…We investigate the charge trapping during endurance fatigue of FeFET with TiN/Hf 0.5 Zr 0.5 O 2 /SiO 2 /Si (MFIS) gate structure. We propose a method of…”
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Wake-Up Free Hf₀.₅Zr₀.₅O₂ Ferroelectric Capacitor by Annealing and Inserting a Top Dielectric Layer by Liao, Min, Chai, Junshuai, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu

“…In this work, we realize the fabrication of wake-up free Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric (FE) capacitors with metal/dielectric…”
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Depolarization Field in FeFET Considering Minor Loop Operation and Charge Trapping by Jia, Xinpei, Xiang, Jinjuan, Xu, Hao, Liu, Wenjun, Wang, Xiaolei, Wang, Wenwu

“…The ferroelectric field-effect transistor (FeFET) is a promising candidate for emerging memory. However, data retention loss is a key issue. One reason for the…”
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The Effect of Interface Traps at the Si/SiO₂ Interface on the Transient Negative Capacitance of Ferroelectric FETs by Sun, Xiaoqing, Zhang, Yuanyuan, Xiang, Jinjuan, Han, Kai, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun

“…We theoretically investigated the effect of interface traps (<inline-formula> <tex-math notation="LaTeX">{D}_{it} </tex-math></inline-formula>) at the Si/SiO 2…”
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Experimental investigation on dipole and band offset affected by charge neutrality level modulation by Zhou, Lixing, Xiang, Jinjuan, Wang, Xiaolei, Zhang, Yamin, Wang, Wenwu, Feng, Shiwei

“…Band alignment has been keeping fascinating because of its importance to the heterojunction interface for engineering the device performances. One of the most…”
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A Compact Model of Double Hysteresis Loop for Antiferroelectric Capacitor by Liao, Min, Chai, Junshuai, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu

“…We propose a compact model of a double hysteresis loop for antiferroelectric (AFE) capacitors by considering the interaction between mechanical stress and…”
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Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack by Wang, Xiaolei, Sun, Xiaoqing, Zhang, Yuanyuan, Zhou, Lixing, Xiang, Jinjuan, Ma, Xueli, Yang, Hong, Li, Yongliang, Han, Kai, Luo, Jun, Zhao, Chao, Wang, Wenwu

“…This article theoretically investigates the impact of charges at the ferroelectric/interlayer interface on the depolarization field of ferroelectric FET…”
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FinFET With Improved Subthreshold Swing and Drain Current Using 3-nm Ferroelectric Hf0.5Zr0.5O2 by Zhang, Zhaohao, Xu, Gaobo, Zhang, Qingzhu, Hou, Zhaozhao, Li, Junjie, Kong, ZhenZhen, Zhang, Yongkui, Xiang, Jinjuan, Xu, Qiuxia, Wu, Zhenhua, Zhu, Huilong, Yin, Huaxiang, Wang, Wenwu, Ye, Tianchun

“…High-performance negative capacitance p-type FinFETs (p-FinFETs) with a 3-nm-thick ferroelectric (FE) hafnium zirconium oxides (Hf 0.5 Zr 0.5 O 2 ) layer are…”
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Switching Dynamics of HfO2-ZrO2 Nanolaminates With Different Laminate Thicknesses by Ke, Xiaoyu, Chai, Junshuai, Shao, Xianzhou, Duan, Jiahui, Sun, Xiaoqing, Yang, Shuai, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu

“…In this work, the switching dynamics of HfO2-ZrO2 nanolaminate ferroelectric (FE) films with different laminate thicknesses are investigated. Metal/FE…”
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Trap Generation in Whole Gate Stacks of FeFET With TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) Gate Structure During Endurance Fatigue by Duan, Jiahui, Zhao, Shujing, Tian, Fengbin, Jinjuan Xiang, Han, Kai, Li, Tingting, Xu, Hao, Wang, Xiaolei, Wang, Wenwu, Ye, Tianchun

“…This work investigates trap generation in gate stacks of ferroelectric field-effect transistor (FeFET) with TiN/Hf0.5Zr0.5O2/SiOx/Si gate structure during…”
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Atomic Layer Deposition (ALD) of Metal Gates for CMOS by Zhao, Chao, Xiang, Jinjuan

“…The continuous down-scaling of complementary metal oxide semiconductor (CMOS) field effect transistors (FETs) had been suffering two fateful technical issues,…”
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Investigation of Trap Evolution of Hf0.5Zr0.5O2 FeFET During Endurance Fatigue by Gate Leakage Current by Tian, Fengbin, Sun, Xiaoqing, Li, Songwei, Xu, Shuangshuang, Chai, Junshuai, Jinjuan Xiang, Han, Kai, Wang, Yanrong, Xu, Hao, Zhang, Jing, Wang, Xiaolei, Wang, Wenwu

“…In this work, we study trap evolution in TiN/Hf0.5Zr0.5O2/interlayer/Si FeFET during endurance fatigue by the gate leakage current. We fabricated the FeFET…”
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Investigation of Charge Trapping Induced Trap Generation in Si FeFET With Ferroelectric Hf0.5Zr0.5O2 by Jia, Xinpei, Chai, Junshuai, Duan, Jiahui, Sun, Xiaoqing, Shao, Xianzhou, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu

“…We investigate charge trapping induced trap generation in Si ferroelectric field-effect transistor (FeFET) with ferroelectric Hf0.5Zr0.5O2/SiO2 gate stacks by…”
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Impact of Saturated Spontaneous Polarization on the Endurance Fatigue of Si FeFET With Metal/Ferroelectric/Interlayer/Si Gate Structure by Liao, Min, Xu, Hao, Duan, Jiahui, Zhao, Shujing, Tian, Fengbin, Chai, Junshuai, Han, Kai, Jiang, Yibo, Xiang, Jinjuan, Wang, Wenwu, Wang, Xiaolei

“…We investigate the impact of saturated spontaneous polarization (<inline-formula> <tex-math notation="LaTeX">\textit{P}_{\text{s}}\text{)}</tex-math>…”
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A Physics-Based Model of Charge Trapping Behavior of Si FeFET With Metal/Ferroelectric/Interlayer/Si Structure by Sun, Xiaoqing, Chai, Junshuai, Tian, Fengbin, Zhao, Shujing, Duan, Jiahui, Xiang, Jinjuan, Han, Kai, Xu, Hao, Wang, Xiaolei, Wang, Wenwu

“…To find the driving force of charge trapping effect of the Si ferroelectric field effect transistor (FeFET), we propose a physics-based model. This effect…”
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Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors by Dai, Saifei, Li, Songwei, Xu, Shuangshuang, Tian, Fengbin, Chai, Junshuai, Duan, Jiahui, Xiong, Wenjuan, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Zhang, Jing, Wang, Xiaolei, Wang, Wenwu

“…In this study, we investigate the impact of nitridation in Hf<inline-formula> <tex-math notation="LaTeX">_{{0}.{5}}…”
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Investigation of Endurance Degradation Mechanism of Si FeFET With HfZrO Ferroelectric by an In Situ Vth Measurement by Shao, Xianzhou, Chai, Junshuai, Tian, Fengbin, Zhao, Shujing, Duan, Jiahui, Ke, Xiaoyu, Sun, Xiaoqing, Jinjuan Xiang, Han, Kai, Wang, Yanrong, Xu, Hao, Wang, Xiaolei, Zhang, Jing, Wang, Wenwu, Ye, Tianchun

“…We propose an in situ [Formula Omitted] measurement method to investigate the endurance fatigue mechanism of Si ferroelectric field-effect transistor (FeFET)…”
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Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method by Li, Yilin, Zhu, Hui, Liu, Xing, Wang, Xiaolei, Xu, Hao, Pan, Shijie, Xiang, Jinjuan, Zhou, Lixing, Yao, Zhiwen, Sun, Yerong, Feng, Shiwei

“…The trap characteristics and polarization effect on the trapping behavior in Hf0.5Zr0.5O2 ferroelectric field-effect transistors were analyzed. The current…”
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Ferroelectric Vertical Gate-All-Around Field-Effect-Transistors With High Speed, High Density, and Large Memory Window by Huang, Weixing, Zhu, Huilong, Zhang, Yongkui, Yin, Xiaogen, Ai, Xuezheng, Li, Junjie, Li, Chen, Li, Yangyang, Xie, Lu, Liu, Yongbo, Xiang, Jinjuan, Jia, Kunpeng, Li, Junfeng, Ye, T. C.

“…Ferroelectric vertical gate-all-around field-effect-transistor (Fe-VGAAFET) suits a memory cell with a 5 nm technology node and beyond since it is less…”
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