Search Results - "Xi, P. S."

Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy by Ma, Y. J., Zhang, Y. G., Gu, Y., Xi, S. P., Chen, X. Y., Liang, Baolai, Juang, Bor-Chau, Huffaker, Diana L., Du, B., Shao, X. M., Fang, J. X.

“…We report structural properties as well as electrical and optical behaviors of beryllium (Be)-doped InGaAsP lattice-matched to InP grown by gas source…”
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Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP by Gu, Y., Zhang, Y. G., Chen, X. Y., Ma, Y. J., Xi, S. P., Du, B., Li, Hsby

“…This work reports on the demonstration of a short-wave infrared detector nearly lattice matched to InP substrate using quaternary InGaAsBi as the absorption…”
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Extension of REBMIX algorithm to von Mises parametric family for modeling joint distribution of wind speed and direction by Ye, X.W., Xi, P.S., Nagode, Marko

“…•An improved mixture parameter estimation algorithm is proposed.•The joint mixture distribution model of wind speed and direction is established.•The wind…”
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Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells by Gu, Y., Zhang, Y. G., Chen, X. Y., Xi, S. P., Du, B., Ma, Y. J.

“…We report the effect of Bi surfactant on the properties of highly strained InAs/InGaAs triangular quantum wells grown on InP substrates. Reduced surface…”
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Analysis of non-stationary wind characteristics at an arch bridge using structural health monitoring data by Ye, X. W., Xi, P. S., Su, Y. H.

“…The accurate characterization of the wind characteristics of extreme wind events is crucial to the structural design and safety evaluation. However, the…”
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Metamorphic InAs1-xBix/In0.83Al0.17As quantum well structures on InP for mid-infrared emission by Gu, Y., Zhang, Y. G., Chen, X. Y., Ma, Y. J., Xi, S. P., Du, B., Ji, W. Y., Shi, Y. H.

“…This work reports on InP-based metamorphic quantum well structures with bismuth incorporation for mid-infrared applications. InAs1-xBix quantum well structures…”
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Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors by Chen, X.Y., Gu, Y., Zhang, Y.G., Xi, S.P., Guo, Z.X., Zhou, L., Li, A.Z., Li, Hsby

“…The impact of buffer schemes on the strain relaxation and structural characteristics of In0.83Ga0.17As photodetector structures with relatively high lattice…”
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Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 mu m by Gu, Y, Zhang, Y G, Chen, X Y, Cao, Y Y, Zhou, L, Xi, S P, Li, A Z, Li, Hsby

“…The effects of well widths and well numbers of InGaAs triangular quantum well lasers in 2.30-2.44 mu m range using antimony-free material system on InP…”
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InGaAsP/InP photodetectors targeting on 1.06μm wavelength detection by Xi, S.P., Gu, Y., Zhang, Y.G., Chen, X.Y., Ma, Y.J., Zhou, L., Du, B., Shao, X.M., Fang, J.X.

“…•InGaAsP photodetectors targeting on 1.06μm wavelength have been demonstrated.•The dark current is dramatically lower than In0.53Ga0.47As detector.•The…”
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Characteristics of InGaAsBi with various lattice mismatches on InP substrate by Chen, X. Y., Gu, Y., Zhang, Y. G., Xi, S. P., Du, B., Ma, Y. J., Ji, W. Y., Shi, Y. H.

“…To develop bismuth-containing infrared optoelectronic devices, InGaAsBi/InP films with different lattice mismatches have been investigated. The lattice…”
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Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides by Gu, Y., Zhang, Y.G., Chen, X.Y., Ma, Y.J., Ji, W.Y., Xi, S.P., Du, B., Shi, Y.H., Li, A.Z.

“…•Metamorphic InAs quantum well lasers were grown on InP by MBE.•The structure with trapezoidal quantum wells exhibited improved performances.•The laser…”
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InP-based type-I quantum well lasers up to 2.9  μ m at 230 K in pulsed mode on a metamorphic buffer by Gu, Y., Zhang, Y. G., Ma, Y. J., Zhou, L., Chen, X. Y., Xi, S. P., Du, B.

“…This work reports on up to 2.9 μm lasing at 230 K of InP-based type-I quantum well lasers. This record long wavelength lasing is achieved by applying InP-based…”
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Stochastic characterization of wind field characteristics of an arch bridge instrumented with structural health monitoring system by Ye, X.W., Xi, P.S., Su, Y.H., Chen, B., Han, J.P.

“…•The stochastic characterization of wind field characteristics is carried out.•A genetic algorithm (GA)-based finite mixture modeling approach is proposed.•The…”
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Analysis and probabilistic modeling of wind characteristics of an arch bridge using structural health monitoring data during typhoons by X.W. Ye, P.S. Xi, Y.H. Su, B. Chen

“…The accurate evaluation of wind characteristics and wind-induced structural responses during a typhoon is of significant importance for bridge design and…”
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Effects of continuously graded or step-graded InxAl1−xAs buffer on the performance of InP-based In0.83Ga0.17As photodetectors by Xi, S.P., Gu, Y., Zhang, Y.G., Chen, X.Y., Zhou, L., Li, A.Z., Li, Hsby

“…InP-based high indium content In0.83Ga0.17As photodetector structures with lattice mismatch up to 2.1% have been grown by gas source molecular beam epitaxy…”
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Effects of continuously graded or step-graded In sub(x)Al sub(1-x)As buffer on the performance of InP-based In sub(0.83)Ga sub(0.17)As photodetectors by Xi, S P, Gu, Y, Zhang, Y G, Chen, X Y, Zhou, L, Li, A Z, Li, Hsby

“…InP-based high indium content In sub(0.83)Ga sub(0.17)As photodetector structures with lattice mismatch up to 2.1% have been grown by gas source molecular beam…”
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Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors by Chen, X.Y., Zhang, Y.G., Gu, Y., Ji, X.L., Xi, S.P., Du, B., Ma, Y.J., Ji, W.Y., Shi, Y.H., Li, A.Z.

“…•InP- and GaAs-based In0.83Ga0.17As photodetectors were grown by GSMBE.•GaAs-based photodetector shows higher dark current than InP-based photodetector.•DLTS…”
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2.25- \mu m Avalanche Photodiodes Using Metamorphic Absorber and Lattice-Matched Multiplier on InP by Ma, Y. J., Li, Y. F., Fang, J. X., Zhang, Y. G., Gu, Y., Chen, X. Y., Shi, Y. H., Ji, W. Y., Xi, S. P., Du, B., Tang, H. J.

“…A separated absorption and multiplication avalanche photodiode for light detection to wavelengths as long as 2.25~μm is reported. Photons were absorbed in a…”
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Effects of material parameters on the temperature dependent spectral response of In sub(0.83)Ga sub(0.17)As photodetectors by Zhou, L, Zhang, Y G, Gu, Y, Ma, Y J, Chen, X Y, Xi, S P, Li, Hsby

“…The effects of material parameters on the temperature dependent features of the spectral response of wavelength extended In sub(0.83)Ga sub(0.17)As…”
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Effects of continuously or step-continuously graded buffer on the performance of wavelength extended InGaAs photodetectors by Du, B., Gu, Y., Zhang, Y.G., Chen, X.Y., Xi, S.P., Ma, Y.J., Ji, W.Y., Shi, Y.H., Li, X., Gong, H.M.

“…High In content In0.83Ga0.17As photodetector structures with a new kind of buffer scheme have been grown on InP substrate by gas source molecular beam epitaxy…”
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