Search Results - "Xhurxhi, S."

Relaxation Dynamics and Threading Dislocations in ZnSe and ZnSySe1−y/GaAs (001) Heterostructures by Kujofsa, T., Cheruku, S., Yu, W., Outlaw, B., Xhurxhi, S., Obst, F., Sidoti, D., Bertoli, B., Rago, P. B., Suarez, E. N., Jain, F. C., Ayers, J. E.

“…The design of lattice-mismatched semiconductor devices requires a predictive model for strains and threading dislocation densities. Previous work enabled…”
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Plastic Flow and Dislocation Compensation in ZnSySe1−y/GaAs (001) Heterostructures by Kujofsa, T., Yu, W., Cheruku, S., Outlaw, B., Xhurxhi, S., Obst, F., Sidoti, D., Bertoli, B., Rago, P.B., Suarez, E.N., Jain, F.C., Ayers, J.E.

“…An important goal of lattice-mismatched semiconductor device design is control of threading dislocation densities, which are of particular importance for…”
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S-Graded Buffer Layers for Lattice-Mismatched Heteroepitaxial Devices by Xhurxhi, S., Obst, F., Sidoti, D., Bertoli, B., Kujofsa, T., Cheruku, S., Correa, J. P., Rago, P. B., Suarez, E. N., Jain, F. C., Ayers, J. E.

“…We have conducted a theoretical study of the equilibrium strain and misfit dislocation density profiles for “S-graded” buffer layers of In x Ga 1− x As on GaAs…”
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Design of S-Graded Buffer Layers for Metamorphic ZnSySe1−y/GaAs (001) Semiconductor Devices by Kujofsa, T., Antony, A., Xhurxhi, S., Obst, F., Sidoti, D., Bertoli, B., Cheruku, S., Correa, J. P., Rago, P. B., Suarez, E. N., Jain, F. C., Ayers, J. E.

“…We present design equations for error function (or “S-graded”) graded buffers for use in accommodating lattice mismatch of heteroepitaxial semiconductor…”
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Critical Layer Thickness in Exponentially Graded Heteroepitaxial Layers by Sidoti, D., Xhurxhi, S., Kujofsa, T., Cheruku, S., Reed, J., Bertoli, B., Rago, P. B., Suarez, E. N., Jain, F. C., Ayers, J. E.

“…Exponentially graded semiconductor layers are of interest for use as buffers in heteroepitaxial devices because of their tapered dislocation density and strain…”
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Relaxation Dynamics and Threading Dislocations in ZnSe and ZnS y Se1−y /GaAs (001) Heterostructures by Kujofsa, T., Cheruku, S., Yu, W., Outlaw, B., Xhurxhi, S., Obst, F., Sidoti, D., Bertoli, B., Rago, P. B., Suarez, E. N., Jain, F. C., Ayers, J. E.

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S-Graded Buffet Layers for Lattice-Mismatched Heteroepitaxial Devices by Xhurxhi, S, Obst, F, Sidoti, D, Bertoli, B, Kujofsa, T

“…We have conducted a theoretical study of the equilibrium strain and misfit dislocation density profiles for "S-graded" buffer layers of In sub(x)Ga sub(1-x) As…”
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Relaxation Dynamics and Threading Dislocations in ZnSe and ZnS^sub y^Se^sub 1-y^/GaAs (001) Heterostructures by Kujofsa, T, Cheruku, S, Yu, W, Outlaw, B, Xhurxhi, S, Obst, F, Sidoti, D, Bertoli, B, Rago, P B, Suarez, E N, Jain, F C, Ayers, J E

“…The design of lattice-mismatched semiconductor devices requires a predictive model for strains and threading dislocation densities. Previous work enabled…”
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Design of S-Graded Buffer Layers for Metamorphic ZnS^sub y^Se^sub 1-y^/GaAs (001) Semiconductor Devices by Kujofsa, T, Antony, A, Xhurxhi, S, Obst, F, Sidoti, D, Bertoli, B, Cheruku, S, Correa, J P, Rago, P B, Suarez, E N, Jain, F C, Ayers, J E

“…We present design equations for error function (or "S-graded") graded buffers for use in accommodating lattice mismatch of heteroepitaxial semiconductor…”
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Design of S-Graded Buffer Layers for Metamorphic ZnS y Se1−y /GaAs (001) Semiconductor Devices by Kujofsa, T., Antony, A., Xhurxhi, S., Obst, F., Sidoti, D., Bertoli, B., Cheruku, S., Correa, J. P., Rago, P. B., Suarez, E. N., Jain, F. C., Ayers, J. E.

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Plastic Flow and Dislocation Compensation in ZnS y Se1−y /GaAs (001) Heterostructures by Kujofsa, T., Yu, W., Cheruku, S., Outlaw, B., Xhurxhi, S., Obst, F., Sidoti, D., Bertoli, B., Rago, P.B., Suarez, E.N., Jain, F.C., Ayers, J.E.

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Plastic Flow and Dislocation Compensation in ZnS sub(y)Se sub(1-y)/GaAs (001) Heterostructures by Kujofsa, T, Yu, W, Cheruku, S, Outlaw, B, Xhurxhi, S, Obst, F, Sidoti, D, Bertoli, B, Rago, P B, Suarez, EN

“…An important goal of lattice-mismatched semiconductor device design is control of threading dislocation densities, which are of particular importance for…”
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Plastic Flow and Dislocation Compensation in ZnS^sub y^Se^sub 1-y^/GaAs (001) Heterostructures by Kujofsa, T, Yu, W, Cheruku, S, Outlaw, B, Xhurxhi, S, Obst, F, Sidoti, D, Bertoli, B, Rago, Pb, Suarez, En, Jain, Fc, Ayers, Je

“…An important goal of lattice-mismatched semiconductor device design is control of threading dislocation densities, which are of particular importance for…”
Get full text