Search Results - "XINKE LIU"

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  1. 1

    Fabrication and Electrochemical Performance of PVA/CNT/PANI Flexible Films as Electrodes for Supercapacitors by Ben, Jianwei, Song, Zhiyuan, Liu, Xinke, Lü, Wei, Li, Xiaohua

    Published in Nanoscale research letters (22-07-2020)
    “…The flexible and rechargeable energy storage device with excellent performance is highly desired due to the demands of portable and wearable devices. Herein,…”
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  2. 2

    The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing by Ben, Jianwei, Shi, Zhiming, Zang, Hang, Sun, Xiaojuan, Liu, Xinke, Lü, Wei, Li, Dabing

    Published in Applied physics letters (22-06-2020)
    “…The voids will be formed in the physical vapor deposited (PVD)-AlN epilayer after high temperature annealing. In this work, the formation mechanism of voids…”
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  3. 3

    Few‐Layer Black Phosphorus Carbide Field‐Effect Transistor via Carbon Doping by Tan, Wee Chong, Cai, Yongqing, Ng, Rui Jie, Huang, Li, Feng, Xuewei, Zhang, Gang, Zhang, Yong‐Wei, Nijhuis, Christian A., Liu, Xinke, Ang, Kah‐Wee

    Published in Advanced materials (Weinheim) (01-06-2017)
    “…Black phosphorus carbide (b‐PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes…”
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  4. 4

    Review of Recent Progress on Vertical GaN-Based PN Diodes by Pu, Taofei, Younis, Usman, Chiu, Hsien-Chin, Xu, Ke, Kuo, Hao-Chung, Liu, Xinke

    Published in Nanoscale research letters (07-06-2021)
    “…As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties…”
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  5. 5

    Automatic Diagnosis Based on Spatial Information Fusion Feature for Intracranial Aneurysm by Zeng, Yuwen, Liu, Xinke, Xiao, Nan, Li, Youxiang, Jiang, Yuhua, Feng, Junqiang, Guo, Shuxiang

    Published in IEEE transactions on medical imaging (01-05-2020)
    “…Timely and accurate auxiliary diagnosis of intracranial aneurysm can help radiologist make treatment plans quickly, saving lives and cutting costs at the same…”
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  6. 6

    ZnO UV Photodetectors Modified by Ag Nanoparticles Using All-Inkjet-Printing by Wang, Hsiang-Chun, Hong, Yuehua, Chen, Zhangwei, Lao, Changshi, Lu, Youming, Yang, Zhichao, Zhu, Youhua, Liu, Xinke

    Published in Nanoscale research letters (04-09-2020)
    “…To further improve the performance of all-inkjet-printing ZnO UV photodetector and maintain the advantages of inkjet printing technology, the inkjet printing…”
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  7. 7

    Culprit intracranial plaque without substantial stenosis in acute ischemic stroke on vessel wall MRI: A systematic review by Wang, Yuting, Liu, Xinke, Wu, Xiao, Degnan, Andrew J., Malhotra, Ajay, Zhu, Chengcheng

    Published in Atherosclerosis (01-08-2019)
    “…Intracranial atherosclerotic plaque is associated with ischemic strokes without substantial stenosis, and needs better characterization. We aim to investigate…”
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  8. 8

    2D photonic memristor beyond graphene: progress and prospects by Feng, Xuewei, Liu, Xinke, Ang, Kah-Wee

    Published in Nanophotonics (Berlin, Germany) (01-07-2020)
    “…Photonic computing and neuromorphic computing are attracting tremendous interests in breaking the memory wall of traditional von Neumann architecture. Photonic…”
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  9. 9

    Thermal property engineering of InSe layer by a thin Al2O3 stress liner by Li, Kuilong, Hong, Yuehua, Li, Zhiwen, Liu, Xinke

    Published in Applied physics letters (09-07-2018)
    “…We investigate the thermal properties of thin InSe layers with high-κ oxide Al2O3 stress liners. Temperature-dependent Raman spectroscopy demonstrated that the…”
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  10. 10

    Investigation of CHF3 treatment on the energy band at the MoS2/HfZrO4 heterostructure by Li, Kuilong, Li, Zhiwen, Hong, Yuehua, Hu, Cong, Mao, Wei, Liu, Xinke

    Published in Applied physics letters (01-10-2018)
    “…The energy band engineering at the multilayer MoS2 (5 nm)/HfZrO4 (15 nm) heterojunction and the effects of CHF3 plasma treatment on the band offset were…”
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  11. 11

    A novel noncontact detection method of surgeon’s operation for a master-slave endovascular surgery robot by Zhao, Yan, Xing, Huiming, Guo, Shuxiang, Wang, Yuxin, Cui, Jinxin, Ma, Youchun, Liu, Yu, Liu, Xinke, Feng, Junqiang, Li, Youxiang

    “…Master-slave endovascular interventional surgery (EIS) robots have brought revolutionary advantages to traditional EIS, such as avoiding X-ray radiation to the…”
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  12. 12

    1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer by He, Wei, Li, Jian, Liao, Zeliang, Lin, Feng, Wu, Junye, Wang, Bing, Wang, Maojun, Liu, Nan, Chiu, Hsien-Chin, Kuo, Hao-Chung, Lin, Xinnan, Li, Jingbo, Liu, Xinke

    Published in Nanoscale research letters (15-01-2022)
    “…In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V,…”
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  13. 13

    Comparison of 7 T and 3 T vessel wall MRI for the evaluation of intracranial aneurysm wall by Feng, Junqiang, Liu, Xinke, Zhang, Zihao, Wu, Yue, Li, Zhixin, Zhang, Qiang, Jiang, Yuhua, You, Wei, Liu, Peng, Wang, Yan, Mossa-Basha, Mahmud, Saloner, David, Li, Youxiang, Zhu, Chengcheng

    Published in European radiology (01-04-2022)
    “…Objectives To compare the visibility of intracranial aneurysm wall and thickness quantification between 7 and 3 T vessel wall imaging and evaluate the…”
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  14. 14

    Effects of Al2O3 capping layers on the thermal properties of thin black phosphorus by Li, Kuilong, Ang, Kah-Wee, Lv, Youming, Liu, Xinke

    Published in Applied physics letters (26-12-2016)
    “…We investigate the thermal properties of thin black phosphorus (BP) with Al2O3 capping layer using the temperature-dependent and polarized-laser…”
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  15. 15

    A novel hybrid termination structure for vertical gallium nitride Schottky barrier diode by using technology computer aided design simulation by Li, Jian, Lin, Feng, Chen, Yong, He, Wei, Liu, Xinke

    Published in Electronics letters (01-01-2021)
    “…Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down…”
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  16. 16

    Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment by Wu, Junye, Liao, Zeliang, Wang, Haofan, Zou, Ping, Zhu, Renqiang, Cai, Weixiong, Zhuang, Wenrong, Tu, Yudi, Chen, Shaojun, Xiong, Xinbo, Chiu, Hsien-Chin, Li, Xiaohua, Liu, Xinke

    Published in Applied physics letters (20-11-2023)
    “…In this work, vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) with an ultra-low turn-on voltage VON (0.37 V) were demonstrated. Due to the…”
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  17. 17

    p-Type transparent amorphous oxide thin-film transistors using low-temperature solution-processed nickel oxide by Xu, Wangying, Zhang, Junpeng, Li, Yujia, Zhang, Lingjiao, Chen, Lin, Zhu, Deliang, Cao, Peijiang, Liu, Wenjun, Han, Shun, Liu, Xinke, Lu, Youming

    Published in Journal of alloys and compounds (25-10-2019)
    “…Transparent amorphous oxide semiconductor (TAOS) represented by a-InGaZnO (IGZO) has achieved their commercial success in the display industry due to its…”
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  18. 18

    Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates by Gu, Hong, Hu, Cong, Wang, Jiale, Lu, Youming, Ao, Jin-Ping, Tian, Feifei, Zhang, Yi, Wang, Maojun, Liu, Xinke, Xu, Ke

    Published in Journal of alloys and compounds (05-04-2019)
    “…Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates grown by hydride vapor phase epitaxy. Detailed material…”
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  19. 19

    Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition by Wang, Lin, Chen, Li, Wong, Swee Liang, Huang, Xin, Liao, Wugang, Zhu, Chunxiang, Lim, Yee‐Fun, Li, Dabing, Liu, Xinke, Chi, Dongzhi, Ang, Kah‐Wee

    Published in Advanced electronic materials (01-08-2019)
    “…2D layered materials such as graphene and transition‐metal dichalcogenides (TMDCs) have emerged as promising candidates for next‐generation nanoelectronic…”
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  20. 20

    Band alignment of HfO2/multilayer MoS2 interface determined by x -ray photoelectron spectroscopy: Effect of CHF3 treatment by Liu, Xinke, He, Jiazhu, Liu, Qiang, Tang, Dan, Jia, Fang, Wen, Jiao, Lu, Youming, Yu, Wenjie, Zhu, Deliang, Liu, Wenjun, Cao, Peijiang, Han, Sun, Pan, Jisheng, He, Zhubing, Ang, Kah-Wee

    Published in Applied physics letters (07-09-2015)
    “…The energy band alignment between HfO2/multilayer (ML)-MoS2 was characterized using high-resolution x-ray photoelectron spectroscopy. The HfO2 was deposited…”
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