Search Results - "XINKE LIU"
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Fabrication and Electrochemical Performance of PVA/CNT/PANI Flexible Films as Electrodes for Supercapacitors
Published in Nanoscale research letters (22-07-2020)“…The flexible and rechargeable energy storage device with excellent performance is highly desired due to the demands of portable and wearable devices. Herein,…”
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2
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing
Published in Applied physics letters (22-06-2020)“…The voids will be formed in the physical vapor deposited (PVD)-AlN epilayer after high temperature annealing. In this work, the formation mechanism of voids…”
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3
Few‐Layer Black Phosphorus Carbide Field‐Effect Transistor via Carbon Doping
Published in Advanced materials (Weinheim) (01-06-2017)“…Black phosphorus carbide (b‐PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes…”
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4
Review of Recent Progress on Vertical GaN-Based PN Diodes
Published in Nanoscale research letters (07-06-2021)“…As a representative wide bandgap semiconductor material, gallium nitride (GaN) has attracted increasing attention because of its superior material properties…”
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5
Automatic Diagnosis Based on Spatial Information Fusion Feature for Intracranial Aneurysm
Published in IEEE transactions on medical imaging (01-05-2020)“…Timely and accurate auxiliary diagnosis of intracranial aneurysm can help radiologist make treatment plans quickly, saving lives and cutting costs at the same…”
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6
ZnO UV Photodetectors Modified by Ag Nanoparticles Using All-Inkjet-Printing
Published in Nanoscale research letters (04-09-2020)“…To further improve the performance of all-inkjet-printing ZnO UV photodetector and maintain the advantages of inkjet printing technology, the inkjet printing…”
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7
Culprit intracranial plaque without substantial stenosis in acute ischemic stroke on vessel wall MRI: A systematic review
Published in Atherosclerosis (01-08-2019)“…Intracranial atherosclerotic plaque is associated with ischemic strokes without substantial stenosis, and needs better characterization. We aim to investigate…”
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8
2D photonic memristor beyond graphene: progress and prospects
Published in Nanophotonics (Berlin, Germany) (01-07-2020)“…Photonic computing and neuromorphic computing are attracting tremendous interests in breaking the memory wall of traditional von Neumann architecture. Photonic…”
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9
Thermal property engineering of InSe layer by a thin Al2O3 stress liner
Published in Applied physics letters (09-07-2018)“…We investigate the thermal properties of thin InSe layers with high-κ oxide Al2O3 stress liners. Temperature-dependent Raman spectroscopy demonstrated that the…”
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10
Investigation of CHF3 treatment on the energy band at the MoS2/HfZrO4 heterostructure
Published in Applied physics letters (01-10-2018)“…The energy band engineering at the multilayer MoS2 (5 nm)/HfZrO4 (15 nm) heterojunction and the effects of CHF3 plasma treatment on the band offset were…”
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11
A novel noncontact detection method of surgeon’s operation for a master-slave endovascular surgery robot
Published in Medical & biological engineering & computing (01-04-2020)“…Master-slave endovascular interventional surgery (EIS) robots have brought revolutionary advantages to traditional EIS, such as avoiding X-ray radiation to the…”
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12
1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
Published in Nanoscale research letters (15-01-2022)“…In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V,…”
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13
Comparison of 7 T and 3 T vessel wall MRI for the evaluation of intracranial aneurysm wall
Published in European radiology (01-04-2022)“…Objectives To compare the visibility of intracranial aneurysm wall and thickness quantification between 7 and 3 T vessel wall imaging and evaluate the…”
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14
Effects of Al2O3 capping layers on the thermal properties of thin black phosphorus
Published in Applied physics letters (26-12-2016)“…We investigate the thermal properties of thin black phosphorus (BP) with Al2O3 capping layer using the temperature-dependent and polarized-laser…”
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15
A novel hybrid termination structure for vertical gallium nitride Schottky barrier diode by using technology computer aided design simulation
Published in Electronics letters (01-01-2021)“…Gallium nitride based high‐power electronic devices are now in full swing. However, the phenomenon that the gallium nitride Schottky diodes break down…”
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16
Ultra-low turn-on voltage (0.37 V) vertical GaN-on-GaN Schottky barrier diode via oxygen plasma treatment
Published in Applied physics letters (20-11-2023)“…In this work, vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) with an ultra-low turn-on voltage VON (0.37 V) were demonstrated. Due to the…”
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17
p-Type transparent amorphous oxide thin-film transistors using low-temperature solution-processed nickel oxide
Published in Journal of alloys and compounds (25-10-2019)“…Transparent amorphous oxide semiconductor (TAOS) represented by a-InGaZnO (IGZO) has achieved their commercial success in the display industry due to its…”
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18
Vertical GaN Schottky barrier diodes on Ge-doped free-standing GaN substrates
Published in Journal of alloys and compounds (05-04-2019)“…Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates grown by hydride vapor phase epitaxy. Detailed material…”
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19
Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition
Published in Advanced electronic materials (01-08-2019)“…2D layered materials such as graphene and transition‐metal dichalcogenides (TMDCs) have emerged as promising candidates for next‐generation nanoelectronic…”
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Band alignment of HfO2/multilayer MoS2 interface determined by x -ray photoelectron spectroscopy: Effect of CHF3 treatment
Published in Applied physics letters (07-09-2015)“…The energy band alignment between HfO2/multilayer (ML)-MoS2 was characterized using high-resolution x-ray photoelectron spectroscopy. The HfO2 was deposited…”
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