Search Results - "X.M. Long"

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    A high speed asymmetric T-shape cell in NMOS-selected phase change memory chip by Wang, J.H., Zhou, J., Zhou, W.L., Tong, H., Huang, D.Q., Sun, J.J., Zhang, L., Long, X.M., Chen, Y., Qu, L.W., Miao, X.S.

    Published in Solid-state electronics (01-03-2013)
    “…► A high SET/RESET speed phase change memory cell with a NMOS selector is achieved by optimizing cell structure, material, programming circuit and testing…”
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    Journal Article
  3. 3

    Electrochemical behaviour of bismuth in sulfuric acid solution by Li, W.S., Long, X.M., Yan, J.H., Nan, J.M., Chen, H.Y., Wu, Y.M.

    Published in Journal of power sources (25-08-2006)
    “…Bismuth is considered to be a detrimental element to lead–acid batteries because it has lower hydrogen evolution overpotential than lead. On the other hand,…”
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    Journal Article Conference Proceeding
  4. 4

    Oxygen evolution reaction on lead–bismuth alloys in sulfuric acid solution by Li, W.S., Chen, H.Y., Long, X.M., Wu, F.H., Wu, Y.M., Yan, J.H., Zhang, C.R.

    Published in Journal of power sources (25-08-2006)
    “…Lead–bismuth alloys with bismuth from 0 to 8 wt.% were prepared. Oxygen evolution reaction on the alloys with lead dioxides was investigated by using linear…”
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    Journal Article Conference Proceeding
  5. 5

    Effect of bismuth on hydrogen evolution reaction on lead in sulfuric acid solution by Wu, Y.M., Li, W.S., Long, X.M., Wu, F.H., Chen, H.Y, Yan, J.H., Zhang, C.R.

    Published in Journal of power sources (01-06-2005)
    “…The effect of bismuth on hydrogen evolution on lead in sulfuric acid solution is investigated by linear potential sweep, alternating current (ac) impedance,…”
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    Journal Article Conference Proceeding
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    Dynamic switching characteristic dependence on sidewall angle for phase change memory by Long, X.M., Miao, X.S., Sun, J.J., Cheng, X.M., Tong, H., Li, Y., Yang, D.H., Huang, J.D., Liu, C.

    Published in Solid-state electronics (2012)
    “…► We model the volume-minimized type of phase change memory cell. ► The dynamic switching characteristic dependence on the sidewall angle is researched by…”
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    Journal Article