Search Results - "Wu, Ssu Kuan"
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Substrate-induced strain in 2D layered GaSe materials grown by molecular beam epitaxy
Published in Scientific reports (31-07-2020)“…Two-dimensional (2D) layered GaSe films were grown on GaAs (001), GaN/Sapphire, and Mica substrates by molecular beam epitaxy (MBE). The in situ reflective…”
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Structural and surface characterizations of 2D β-In2Se3/3D β-Ga2O3 heterostructures grown on c-Sapphire substrates by molecular beam epitaxy
Published in Scientific reports (01-03-2024)“…Integrating two-dimensional (2D) layered materials with wide bandgap β-Ga 2 O 3 has unveiled impressive opportunities for exploring novel physics and device…”
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Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy
Published in Scientific reports (28-11-2019)“…Regardless of the dissimilarity in the crystal symmetry, the two-dimensional GaSe materials grown on GaAs(001) substrates by molecular beam epitaxy reveal a…”
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The Effect of Heavy Fe-Doping on 3D Growth Mode and Fe Diffusion in GaN for High Power HEMT Application
Published in Materials (10-03-2022)“…The high electron mobility transistor (HEMT) structures on Si (111) substrates were fabricated with heavily Fe-doped GaN buffer layers by metalorganic chemical…”
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Nanotribological Characteristics of the Al Content of AlxGa1−xN Epitaxial Films
Published in Nanomaterials (Basel, Switzerland) (01-11-2023)“…The nanotribological properties of aluminum gallium nitride (AlxGa1−xN) epitaxial films grown on low-temperature-grown GaN/AlN/Si substrates were investigated…”
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Novel Method for the Growth of Two-Dimensional Layered InSe Thin Films on Amorphous Substrate by Molecular Beam Epitaxy
Published in Frontiers in materials (23-03-2022)“…A two-dimensional (2D) material known as indium selenide (InSe) is widely considered a promising layered semiconductor with potential applications in…”
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Solid Phase Epitaxy of Single Phase Two-Dimensional Layered InSe Grown by MBE
Published in Nanomaterials (Basel, Switzerland) (15-07-2022)“…Single-phase two-dimensional (2D) indium monoselenide (γ-InSe) film is successfully grown via solid phase epitaxy in the molecular beam epitaxy (MBE) system…”
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High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT
Published in Nanomaterials (Basel, Switzerland) (07-07-2021)“…The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor…”
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Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery
Published in Scientific reports (06-10-2021)“…Hydrostatically pressurized studies using diamond anvil cells on the structural phase transition of the free-standing screw-dislocation-driven (SDD) GaSe thin…”
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Molecular Beam Epitaxy of Two-Dimensional GaTe Nanostructures on GaAs(001) Substrates: Implication for Near-Infrared Photodetection
Published in ACS applied nano materials (24-09-2021)“…Molecular beam epitaxy of two-dimensional (2D) GaTe nanostructures on GaAs(001) substrates has been reported in this study. A trade-off between growth…”
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Nanotribological Characteristics of the Al Content of Al[sub.x]Ga[sub.1−x]N Epitaxial Films
Published in Nanomaterials (Basel, Switzerland) (01-10-2023)“…The nanotribological properties of aluminum gallium nitride (Al[sub.x]Ga[sub.1−x]N) epitaxial films grown on low-temperature-grown GaN/AlN/Si substrates were…”
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Control of Lateral Epitaxial Nanothin β‑In2Se3 Grown by Molecular Beam Epitaxy: Implications in Fabricating of Next-Generation Transistors
Published in ACS applied nano materials (13-09-2024)“…This study was meticulously conducted, delving into the epitaxial growth of nanothin β-In2Se3 films on sapphire (0001) using molecular beam epitaxy. The growth…”
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Structural and surface characterizations of 2D β-In 2 Se 3 /3D β-Ga 2 O 3 heterostructures grown on c-Sapphire substrates by molecular beam epitaxy
Published in Scientific reports (01-03-2024)“…Integrating two-dimensional (2D) layered materials with wide bandgap β-Ga O has unveiled impressive opportunities for exploring novel physics and device…”
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