Search Results - "Wu, Owen K."

Influence of the interfacial oxide on titanium silicide formation by rapid thermal annealing by Pramanik, D., Saxena, A. N., Wu, Owen K., Peterson, G. G., Tanielian, M.

“…The interaction of titanium films with single crystal silicon during rapid thermal annealing (RTA) has been studied by Auger analysis and SEM. The diffusion of…”
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Silicon production from the interaction between silicon oxide (SiO) molecular beam and a tungsten carbide surface by Wu, Owen K. T, Burns, Richard P

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MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3-1.6 mum avalanche photodectors by Wu, Owen K, Rajavel, Rajesh D, De Lyon, Terry J, Jensen, John E

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Status of II–VI molecular-beam epitaxy technology by Wu, Owen K., Rajavel, R.D., Jensen, J.E.

“…II–VI materials have numerous optoelectronic applications such as HgCdTe for IR imaging and ZnSe for full color flat panel, optical recording and under-water…”
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MBE-grown HgCdTe multi-layer heterojunction structures for high speed low-noise 1.3–1.6 µm avalanche photodetectors by Wu, Owen K., Rajavel, Rajesh D., De Lyon, Terry J., Jensen, John E., Jack, Mike D., Kosai, Ken, Chapman, George R., Sen, Sanghamitra, Baumgratz, Bonnie A., Walker, Bobby, Johnson, Bill

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Chemical doping of HgCdTe by molecular‐beam epitaxy by Wu, Owen K., Kamath, G. S., Radford, W. A., Bratt, P. R., Patten, E. A.

“…Chemical doping of HgCdTe is an important issue in II–VI compound semiconductors. In this paper, we will report on the molecular‐beam epitaxy (MBE) growth and…”
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HgCdTe molecular beam epitaxy technology: a focus on material properties by WU, O. K, JAMBA, D. M, KAMATH, G. S, CHAPMAN, G. R, JOHNSON, S. M, PETERSON, J. M, KOSAI, K, COCKRUM, C. A

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