Search Results - "Wouters, D. J"

Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode by Chen, Y.Y., Goux, L., Pantisano, L., Swerts, J., Adelmann, C., Mertens, S., Afanasiev, V.V., Wang, X.P., Govoreanu, B., Degraeve, R., Kubicek, S., Paraschiv, V., Verbrugge, B., Jossart, N., Altimime, L., Jurczak, M., Kittl, J., Groeseneken, G., Wouters, D.J.

“…We proposed a new, simpler, and fully BEOL CMOS-compatible TiN/HfO2/TiN RRAM stack using the Plasma Enhanced Atomic Layer Deposition (PEALD) for the…”
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3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaOX/Pt-ReRAM Devices by Kim, W., Menzel, S., Wouters, D. J., Waser, R., Rana, V.

“…The influence of two different ohmic electrodes (W and Ta) on the resistive switching characteristics of TaO x -based resistive random access memory (ReRAM)…”
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Solution growth of metal-organic complex CuTCNQ in small dimension interconnect structures by Demolliens, A., Muller, Ch, Müller, R., Turquat, Ch, Goux, L., Deleruyelle, D., Wouters, D.J.

“…In this paper, we report two different elaboration routes to grow metal-organic complex CuTCNQ in liquid phase within small interconnect structures (i.e. via…”
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Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells by Goux, L., Czarnecki, P., Chen, Y. Y., Pantisano, L., Wang, X. P., Degraeve, R., Govoreanu, B., Jurczak, M., Wouters, D. J., Altimime, L.

“…In this letter, we study the influence of the Pt top-electrode thickness and of the chamber atmosphere during cell operation on the resistive switching of…”
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A Novel Method for Extracting the Temperature-Dependent Crystal-Growth Parameters in Fast-Growth Phase-Change Memories by Goux, L, Hurkx, G A M, Wang, X P, Delhougne, R, Attenborough, K, Gravesteijn, D, Wouters, D J, Perez Gonzalez, J

“…In this letter, we propose a novel method for the extraction of the crystal-growth parameters as a function of temperature in a reset-programmed phase-change…”
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Accurate evaluation method for HRS retention of VCM ReRAM by Kopperberg, N., Wouters, D. J., Waser, R., Menzel, S., Wiefels, S.

“…Long-term retention is one of the major challenges concerning the reliability of redox-based resistive switching random access memories based on the valence…”
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Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells by Goux, L., Opsomer, K., Degraeve, R., Müller, R., Detavernier, C., Wouters, D. J., Jurczak, M., Altimime, L., Kittl, J. A.

“…In this letter, we explore the influence of the CuxTe1-x layer composition (0.2 < x < 0.8) on the resistive switching of CuxTe1−x/Al2O3/Si cells. While x > 0.7…”
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Analyses of a 1-layer neuromorphic network using memristive devices with non-continuous resistance levels by Siemon, A., Ferch, S., Heittmann, A., Waser, R., Wouters, D. J., Menzel, S.

“…The emerging nonvolatile memory technology of redox-based resistive switching (RS) devices is not only a promising candidate for future high density memories…”
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Relevance of the pulsed capacitance-voltage measurement technique for the optimization of SrBi2Ta2O9/high-k stack combination to be used in FeFET devices by XU, Z, GOUX, L, KACZER, B, VANDER MEEREN, H, WOUTERS, D. J, GROESENEKEN, G

“…The ferroelectric field effect transistor (FeFET) with metal-ferroelectric-insulator-semiconductor (MFIS) structure has attracted a lot of interest recently as…”
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Microstructural analysis of integrated pin-shaped two-dimensional and three-dimensional ferroelectric capacitors from micro-focused synchrotron X-ray techniques by Menou, N., Muller, Ch, Goux, L., Barrett, R., Lisoni, J. G., Schwitters, M., Wouters, D. J.

“…Future development of ferroelectric random access memory requires the integration of three‐dimensional ferroelectric capacitors (FeCAP) in a microelectronic…”
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Developing a conductive oxygen barrier for ferroelectric integration by Johnson, J.A., Lisoni, J.G., Wouters, D.J.

“…For high-density FeRAM memories, the 1T–1C architecture has been proposed. In this scheme, the ferrocapacitor (FeCAP), a metal\ferroelectric film\metal-like…”
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Chemical structure evolution and orientation selection in sol-gel-prepared ferroelectric Pb(Zr,Ti)O3 thin films by Fè, L., Norga, G. J., Wouters, D. J., Maes, H. E., Maes, G.

“…We studied in detail the chemical structure evolution of Pb(Zr1−x, Tix)O3 (PZT) thin films on Pt electrodes during the initial thermal steps of their…”
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Statistical insight into controlled forming and forming free stacks for HfOx RRAM by Raghavan, N., Fantini, A., Degraeve, R., Roussel, P.J., Goux, L., Govoreanu, B., Wouters, D.J., Groeseneken, G., Jurczak, M.

“…•Percolation model used to optimize oxide and cap thickness for forming-free RRAM.•“Hot forming” helps reduce variability in the forming voltage…”
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Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy by Kindsmüller, A., Schmitz, C., Wiemann, C., Skaja, K., Wouters, D. J., Waser, R., Schneider, C. M., Dittmann, R.

“…The switching mechanism of valence change resistive memory devices is widely accepted to be an ionic movement of oxygen vacancies resulting in a valence change…”
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Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems by Goux, L., Opsomer, K., Franquet, A., Kar, G., Jossart, N., Richard, O., Wouters, D.J., Müller, R., Detavernier, C., Jurczak, M., Kittl, J.A.

“…In this article we study the thermal stability of Al2O3\Cu–Te bi-layers up to temperatures used in the back-end-of-line integration process flow of…”
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Hydrogen-Induced Resistive Switching in TiN/ALD HfO2/PEALD TiN RRAM Device by YANG YIN CHEN, GOUX, L, SWERTS, J, TOELLER, M, ADELMANN, C, KITTL, J, JURCZAK, M, GROESENEKEN, G, WOUTERS, D. J

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Deposition of 60 nm thin Sr0.8Bi2.2Ta2O9 layers for application in scaled 1T1C and 1T FeRAM devices by Goux, L., Xu, Z., Kaczer, B., Groeseneken, G., Wouters, D.J.

“…Voltage scaling of 1T1C and 1T FeRAM devices requires the optimization of very thin ferroelectric layers. A current challenge is to deposit thin films on…”
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Effect of crystallization parameters on the properties of Bi3.5La0.5Ti3O12 thin films deposited by aqueous chemical solution deposition by HARDY, A, NELIS, D, VANHOYLAND, G, VAN BAEL, M. K, VAN DEN RUL, H, MULLENS, J, VAN POUCKE, L. C, D'HAEN, J, GOUX, L, WOUTERS, D. J

“…Several crystallization parameters were studied during the fabrication of Bi3.5La0.5Ti3O12 thin films by means of a new aqueous chemical solution deposition…”
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Oxidation kinetics of Ni metallic films: Formation of NiO-based resistive switching structures by Courtade, L., Turquat, Ch, Muller, Ch, Lisoni, J.G., Goux, L., Wouters, D.J., Goguenheim, D., Roussel, P., Ortega, L.

“…Resistive switching controlled by external voltage has been reported in many Metal/Resistive oxide/Metal (MRM) structures in which the resistive oxide was…”
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Organic CuTCNQ integrated in complementary metal oxide semiconductor copper back end-of-line for nonvolatile memories by Müller, R., De Jonge, S., Myny, K., Wouters, D. J., Genoe, J., Heremans, P.

“…Nanowires of the organometallic semiconductor CuTCNQ were grown from TCNQ vapor in 250 nm diameter vias of a Cu back end-of-line process. Corresponding…”
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