Search Results - "Wosinski, Tadeusz"
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Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy
Published in Applied physics letters (12-12-2022)“…Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under…”
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Impact of Bismuth Incorporation into (Ga,Mn)As Dilute Ferromagnetic Semiconductor on Its Magnetic Properties and Magnetoresistance
Published in Materials (01-01-2023)“…The impact of bismuth incorporation into the epitaxial layer of a (Ga,Mn)As dilute ferromagnetic semiconductor on its magnetic and electromagnetic properties…”
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3
Tunable Planar Hall Effect in (Ga,Mn)(Bi,As) Epitaxial Layers
Published in Materials (10-08-2021)“…We have thoroughly investigated the planar Hall effect (PHE) in the epitaxial layers of the quaternary compound (Ga,Mn)(Bi,As). The addition of a small amount…”
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4
Influence of Bi doping on the electronic structure of (Ga,Mn)As epitaxial layers
Published in Scientific reports (12-10-2023)“…The influence of the addition of Bi to the dilute ferromagnetic semiconductor (Ga,Mn)As on its electronic structure as well as on its magnetic and structural…”
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5
Structural Quality and Magnetotransport Properties of Epitaxial Layers of the (Ga,Mn)(Bi,As) Dilute Magnetic Semiconductor
Published in Materials (03-12-2020)“…Structural analysis of epitaxial layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor (DMS), together with investigations of their…”
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6
Phonon-assisted tunnel emission of holes from the double donor level of the EL2 defect
Published in Physica Status Solidi. B: Basic Solid State Physics (01-10-2016)“…Strong electric‐field‐induced enhancement of the thermal emission rate of holes from the doubly ionised charge state of the ΕL2 defect was revealed with the…”
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Misfit-Dislocation Induced Surface Morphology of InGaAs/GaAs Heterostructures
Published in Mikrochimica acta (1966) (01-04-2004)“…The correlation between the surface cross-hatched morphology and the interfacial misfit dislocations in partially relaxed InGaAs/GaAs heterostructures was…”
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Valence Band Dispersion in Bi Doped (Ga,Mn)As Epitaxial Layers
Published in IEEE transactions on magnetics (01-11-2023)“…The impact of incorporating Bi into (Ga,Mn)As layers on their electronic, band structure, magnetic, and structural properties has been studied. The…”
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Domain-wall controlled (Ga,Mn)As nanostructures for spintronic applications
Published in Physica. E, Low-dimensional systems & nanostructures (01-06-2013)“…Valence-band structure and magnetic properties, especially magnetic anisotropies, in the (Ga,Mn)As diluted ferromagnetic semiconductor are shortly discussed…”
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Journal Article Conference Proceeding -
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Remnant magnetoresistance effect at the intersection of two ferromagnetic (Ga,Mn)As nanowires
Published in Physica Status Solidi (b) (01-07-2011)“…Cross‐like nanostructures composed of two perpendicular ferromagnetic (Ga,Mn)As nanowires were fabricated using electron‐beam lithography patterning…”
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Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy
Published 22-08-2022“…Appl.Phys. Lett. 121, 242401 (2022) Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic…”
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12
Domain-wall induced magneto-resistive memory in ferromagnetic (Ga, Mn)As nanostructures
Published in 12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors,2007-09-09 - 2007-09-13 (01-12-2008)“…Novel magneto-resistive memory effect is demonstrated, which appears in lithographically patterned Y-shaped, three-terminal nanostructures, consisting of three…”
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Journal Article Conference Proceeding -
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Investigation of Valence Band Dispersion in (Ga, Mn)(Bi, As) Epitaxial Nanolayers
Published in 2023 IEEE 13th International Conference Nanomaterials: Applications & Properties (NAP) (10-09-2023)“…The impact of incorporating Bi into (Ga,Mn)As layers on their electronic, band structure, magnetic, and structural properties has been studied. The…”
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Conference Proceeding -
14
Electric-field-enhanced electron emission from the EL5 deep-level defect in GaAs
Published in Materials science in semiconductor processing (01-02-2006)“…Double-correlation deep-level transient spectroscopy has been used to study the electric-field-induced thermal emission of electrons from the EL5 defect in…”
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Journal Article Conference Proceeding -
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Valence Band Dispersion in Mn, Bi and In doped GaAs
Published in 2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers) (01-05-2023)“…Impact of Bi and In incorporation into (Ga,Mn)As layers on their electronic- and band-structures as well as their magnetic and structural properties has been…”
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Conference Proceeding -
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Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications
Published 24-12-2019“…Semicond. Sci. Technol. 36, 045022 (2021) Structural defects in the p-ZnTe/i-CdTe/n-CdTe single-crystalline heterojunctions designed for photovoltaic…”
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