Search Results - "Woong-Ki Hong"
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Thermochromic Vanadium Dioxide Nanostructures for Smart Windows and Radiative Cooling
Published in Chemistry : a European journal (01-08-2024)“…The pursuit of energy‐saving materials and technologies has garnered significant attention for their pivotal role in mitigating both energy consumption and…”
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2
Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes
Published in Small (Weinheim an der Bergstrasse, Germany) (11-10-2013)“…A highly flexible and transparent transistor is developed based on an exfoliated MoS2 channel and CVD‐grown graphene source/drain electrodes. Introducing the…”
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3
Thermodynamically Stable Synthesis of Large‐Scale and Highly Crystalline Transition Metal Dichalcogenide Monolayers and their Unipolar n–n Heterojunction Devices
Published in Advanced materials (Weinheim) (01-09-2017)“…Transition metal dichalcogenide (TMDC) monolayers are considered to be potential materials for atomically thin electronics due to their unique electronic and…”
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4
Electric Stress-Induced Threshold Voltage Instability of Multilayer MoS2 Field Effect Transistors
Published in ACS nano (24-09-2013)“…We investigated the gate bias stress effects of multilayered MoS2 field effect transistors (FETs) with a back-gated configuration. The electrical stability of…”
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5
Dual Mode Optoelectronic Devices Based on 2D Single Crystalline VO2 Films with Controlled Metallic Domain Regime Induced Variable Hysteresis
Published in Advanced optical materials (01-07-2024)“…The multimode optoelectronic operation in a single component device is an attractive design strategy for future optoelectronics, which demands unique and…”
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6
Photoelectron Spectroscopic Imaging and Device Applications of Large-Area Patternable Single-Layer MoS2 Synthesized by Chemical Vapor Deposition
Published in ACS nano (27-05-2014)“…Molybdenum disulfide (MoS2) films, which are only a single atomic layer thick, have been synthesized by chemical vapor deposition (CVD) and have gained…”
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7
Nanostructured Vanadium Dioxide Materials for Optical Sensing Applications
Published in Sensors (Basel, Switzerland) (27-07-2023)“…Vanadium dioxide (VO ) is one of the strongly correlated materials exhibiting a reversible insulator-metal phase transition accompanied by a structural…”
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8
Robust and stretchable indium gallium zinc oxide-based electronic textiles formed by cilia-assisted transfer printing
Published in Nature communications (01-06-2016)“…Electronic textile (e-textile) allows for high-end wearable electronic devices that provide easy access for carrying, handling and using. However, the related…”
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9
Plasmonic Core-Shell-Satellites with Abundant Electromagnetic Hotspots for Highly Sensitive and Reproducible SERS Detection
Published in International journal of molecular sciences (11-11-2021)“…In this work, we develop a Ag@Al O @Ag plasmonic core-shell-satellite (PCSS) to achieve highly sensitive and reproducible surface-enhanced Raman spectroscopy…”
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10
Electrical Properties of Surface-Tailored ZnO Nanowire Field-Effect Transistors
Published in IEEE transactions on electron devices (01-11-2008)“…A review on the tunable electrical properties of ZnO nanowire field-effect transistors (FETs) is presented. The FETs made from surface-tailored ZnO nanowire…”
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11
Passivation effects on ZnO nanowire field effect transistors under oxygen, ambient, and vacuum environments
Published in Applied physics letters (30-06-2008)“…We investigated the passivation effects on the electrical characteristics of ZnO nanowire field effect transistors (FETs) under the various oxygen environments…”
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12
Tunable Electronic Transport Characteristics of Surface-Architecture-Controlled ZnO Nanowire Field Effect Transistors
Published in Nano letters (01-03-2008)“…Surface-architecture-controlled ZnO nanowires were grown using a vapor transport method on various ZnO buffer film coated c-plane sapphire substrates with or…”
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13
Piezoelectric Effect on the Electronic Transport Characteristics of ZnO Nanowire Field-Effect Transistors on Bent Flexible Substrates
Published in Advanced materials (Weinheim) (02-12-2008)“…Inorganic field‐effect transistors are fabricated using ZnO and In2O3 nanowires on flexible plastic substrates and their electronic characteristics are…”
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14
Hydrogen-Induced Morphotropic Phase Transformation of Single-Crystalline Vanadium Dioxide Nanobeams
Published in Nano letters (10-04-2013)“…We report a morphotropic phase transformation in vanadium dioxide (VO2) nanobeams annealed in a high-pressure hydrogen gas, which leads to the stabilization of…”
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15
Suppression of Phosphorous Out-Diffusion in PH3 Plasma Immersion Ion-Implanted Germanium Epilayer Grown on Silicon (100) Substrate through SiOx Capping Layer
Published in MATERIALS TRANSACTIONS (01-01-2020)“…The PH3 plasma immersion ion implantation (PIII) process was used to introduce phosphorus (P) atoms in a germanium (Ge) film epitaxially grown on a silicon…”
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16
Nonvolatile Memory Functionality of ZnO Nanowire Transistors Controlled by Mobile Protons
Published in ACS nano (25-01-2011)“…We demonstrated the nonvolatile memory functionality of ZnO nanowire field effect transistors (FETs) using mobile protons that are generated by high-pressure…”
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17
Influence of surface structure on the phonon-assisted emission process in the ZnO nanowires grown on homoepitaxial films
Published in Applied physics letters (26-01-2009)“…We carried out temperature-dependent photoluminescence measurements to investigate the influence of surface roughness on the phonon-assisted emission of the…”
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18
Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams
Published in Scientific reports (04-06-2015)“…Single-crystalline vanadium dioxide (VO 2 ) nanostructures have recently attracted great attention because of their single domain metal-insulator transition…”
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19
Fabrication of TiO2 nanotubes by using electrodeposited ZnO nanorod template and their application to hybrid solar cells
Published in Electrochimica acta (2008)“…Vertically aligned TiO2 nanotubes have been fabricated on the indium-doped tin oxide (ITO) by a simple and versatile technique using the electrochemically…”
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20
Characteristics of light-induced electron transport from P3HT to ZnO-nanowire field-effect transistors
Published in Applied physics letters (25-11-2013)“…We fabricated ZnO-nanowire (NW) field-effect transistors (FETs) coated with poly(3-hexylthiophene) (P3HT) and characterized the electron-transfer…”
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