Search Results - "Woods, Keenan N."

Impact of Relative Humidity during Spin-Deposition of Metal Oxide Thin Films from Aqueous Solution Precursors by Plassmeyer, Paul N, Mitchson, Gavin, Woods, Keenan N, Johnson, David C, Page, Catherine J

“…Relative humidity during the spin-processing of thin film solution precursors is often not controlled or measured, and its effect on film thickness is…”
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Solution-Processed Li2O–Al2O3/TiO2 Nanolaminate Stacks Containing Mobile Lithium Ions and with Increased Breakdown Voltages by Clayton, Donald R, Lepage, David, Woods, Keenan N, Page, Catherine J, Lonergan, Mark C

“…An aqueous solution approach has been utilized to prepare nanolaminates of TiO2 and ionically conductive Li2O–Al2O3 (LiAlO). This new approach utilizes low…”
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Aluminum Oxide Thin Films from Aqueous Solutions: Insights from Solid-State NMR and Dielectric Response by Cui, Jinlei, Kast, Matthew G, Hammann, Blake A, Afriyie, Yvonne, Woods, Keenan N, Plassmeyer, Paul N, Perkins, Cory K, Ma, Zayd L, Keszler, Douglas A, Page, Catherine J, Boettcher, Shannon W, Hayes, Sophia E

“…Here, we employ a combination of 27Al solid-state nuclear magnetic resonance (SSNMR) and conventional spectroscopic and microscopic techniques to investigate…”
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High‑κ Lanthanum Zirconium Oxide Thin Film Dielectrics from Aqueous Solution Precursors by Woods, Keenan N, Chiang, Tsung-Han, Plassmeyer, Paul N, Kast, Matthew G, Lygo, Alexander C, Grealish, Aidan K, Boettcher, Shannon W, Page, Catherine J

“…Metal oxide thin films are critical components in modern electronic applications. In particular, high-κ dielectrics are of interest for reducing power…”
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Solution-Processed Li 2 O-Al 2 O 3 /TiO 2 Nanolaminate Stacks Containing Mobile Lithium Ions and with Increased Breakdown Voltages by Clayton, Donald R, Lepage, David, Woods, Keenan N, Page, Catherine J, Lonergan, Mark C

“…An aqueous solution approach has been utilized to prepare nanolaminates of TiO and ionically conductive Li O-Al O (LiAlO). This new approach utilizes low…”
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Correction to Impact of Relative Humidity during Spin-Deposition of Metal Oxide Thin Films from Aqueous Solution Precursors by Plassmeyer, Paul N, Mitchson, Gavin, Woods, Keenan N, Johnson, David C, Page, Catherine J

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Same Precursor, Two Different Products: Comparing the Structural Evolution of In–Ga–O “Gel-Derived” Powders and Solution-Cast Films Using Pair Distribution Function Analysis by Wood, Suzannah R, Woods, Keenan N, Plassmeyer, Paul N, Marsh, David A, Johnson, Darren W, Page, Catherine J, Jensen, Kirsten M. Ø, Johnson, David C

“…Amorphous metal oxides are central to a variety of technological applications. In particular, indium gallium oxide has garnered attention as a thin-film…”
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Nonuniform Composition Profiles in Amorphous Multimetal Oxide Thin Films Deposited from Aqueous Solution by Woods, Keenan N, Thomas, Milana C, Mitchson, Gavin, Ditto, Jeffrey, Xu, Can, Kayal, Donna, Frisella, Kathleen C, Gustafsson, Torgny, Garfunkel, Eric, Chabal, Yves J, Johnson, David C, Page, Catherine J

“…Metal oxide thin films are ubiquitous in technological applications. Often, multiple metal components are used to achieve desired film properties for specific…”
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Non-uniform Composition Profiles in Inorganic Thin Films from Aqueous Solutions by Fairley, Kurtis C, Merrill, Devin R, Woods, Keenan N, Ditto, Jeffrey, Xu, Can, Oleksak, Richard P, Gustafsson, Torgny, Johnson, Darren W, Garfunkel, Eric L, Herman, Gregory S, Johnson, David C, Page, Catherine J

“…A variety of metal oxide films (InGaO x , AlO x , “HafSOx”) prepared from aqueous solutions were found to have non-uniform electron density profiles using…”
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Influence of composition and processing parameters on the properties of solution-processed aluminum phosphate oxide (AlPO) thin films by Norelli, Kevin M., Plassmeyer, Paul N., Woods, Keenan N., Glassy, Benjamin A., Knutson, Christopher C., Beekman, Matt, Page, Catherine J.

“…The effects of precursor solution concentration, composition, and spin-processing parameters on the thickness and electrical properties of ultra-smooth…”
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Thermal atomic layer deposition of ruthenium metal thin films using nonoxidative coreactants by Cwik, Stefan, Woods, Keenan N., Saly, Mark J., Knisley, Thomas J., Winter, Charles H.

“…Atomic layer deposition (ALD) of ruthenium metal films is presented using (η4-2,3-dimethylbutadiene)(tricarbonyl)ruthenium [Ru(DMBD)(CO)3] with the coreactants…”
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Composition-property relationships in high-κ LaxZr1-xOy thin films from aqueous solution by Woods, Keenan N., Hamann, Danielle M., Page, Catherine J.

“…Miniaturization of microelectronic devices has reached a fundamental scaling limit; parasitic electron tunneling through the ultrathin gate dielectric has…”
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Composition-property relationships in high-κ La Zr1-O thin films from aqueous solution by Woods, Keenan N., Hamann, Danielle M., Page, Catherine J.

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Low-Temperature Steam Annealing of Metal Oxide Thin Films from Aqueous Precursors: Enhanced Counterion Removal, Resistance to Water Absorption, and Dielectric Constant by Woods, Keenan N., Plassmeyer, Paul N., Park, Deok-Hie, Enman, Lisa J., Grealish, Aidan K., Kirk, Brenna L., Boettcher, Shannon W., Keszler, Douglas A., Page, Catherine J.

“…Aqueous solution deposition has emerged as a potentially scalable, high-throughput route to functional metal oxide thin films. Aqueous routes, however,…”
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Same Precursor, Two Different Products: Comparing the Structural Evolution of In–Ga–O “Gel-Derived” Powders and Solution-Cast Films Using Pair Distribution Function Analysis by Wood, Suzannah R., Woods, Keenan N., Plassmeyer, Paul N., Marsh, David A., Johnson, Darren W., Page, Catherine J., Jensen, Kirsten M. Ø., Johnson, David C.

“…Amorphous metal oxides are central to a variety of technological applications. In particular, indium gallium oxide has garnered attention as a thin-film…”
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Amorphous Metal Oxide Thin Films from Aqueous Precursors: New Routes to High-kappa Dielectrics, Impact of Annealing Atmosphere Humidity, and Elucidation of Non-Uniform Composition Profiles by Woods, Keenan N

“…Metal oxide thin films serve as critical components in many modern technologies, including microelectronic devices. Industrial state-of-the-art production…”
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