Search Results - "Woo, R. L."

Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon by Cheng, S.F., Gao, L., Woo, R.L., Pangan, A., Malouf, G., Goorsky, M.S., Wang, K.L., Hicks, R.F.

“…The selective area, metalorganic vapor-phase epitaxy of gallium arsenide on silicon substrates was investigated. Low-temperature arsenic passivation of the…”
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Direct Semiconductor Bonded 5J Cell for Space and Terrestrial Applications by Chiu, P. T., Law, D. C., Woo, R. L., Singer, S. B., Bhusari, D., Hong, W. D., Zakaria, A., Boisvert, J., Mesropian, S., King, R. R., Karam, N. H.

“…Spectrolab has demonstrated a 2.2/1.7/1.4/1.05/0.73 eV 5J cell with an efficiency of 37.8% under 1 sun AM1.5G spectrum and 35.1% efficiency for 1 sun AM0. The…”
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Red shift in the photoluminescence of indium gallium arsenide nitride induced by annealing in nitrogen trifluoride by Woo, R.L., Malouf, G., Cheng, S.F., Woo, R.N., Goorsky, M., Hicks, R.F.

“…The effect of annealing a 75nm-thick layer of indium gallium arsenide nitride (InGaAsN) in 1.0×10 −6 Torr of nitrogen trifluoride (NF 3) has been studied by…”
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Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (0 0 1)-(2 × 4) surface by Woo, R.L., Das, U., Cheng, S.F., Chen, G., Raghavachari, K., Hicks, R.F.

“…Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (0 0 1)-(2 × 4) surface at 25 °C have been studied by internal reflection infrared…”
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Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride by Cheng, S.F., Woo, R.L., Noori, A.M., Malouf, G., Goorsky, M.S., Hicks, R.F.

“…The metalorganic chemical vapor deposition of In 0.06Ga 0.94As 1− x N x , with x=0.00–0.02, has been examined using nitrogen trifluoride (NF 3) and…”
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35.8% space and 38.8% terrestrial 5J direct bonded cells by Chiu, P. T., Law, D. C., Woo, R. L., Singer, S. B., Bhusari, D., Hong, W. D., Zakaria, A., Boisvert, J., Mesropian, S., King, R. R., Karam, N. H.

“…Spectrolab has fabricated a direct semiconductor bonded space solar cell with an efficiency of 35.8% under the AM0 space spectrum. Using a similar technology,…”
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Recent progress of Spectrolab high-efficiency space solar cells by Law, D. C., Liu, X. Q., Boisvert, J. C., Redher, E. M., Fetzer, C. M., Mesropian, S., King, R. R., Edmondson, K. M., Jun, B., Woo, R. L., Krut, D. D., Chiu, P. T., Bhusari, D. M., Sharma, S. K., Karam, N. H.

“…High-efficiency Inverted Metamorphic (IMM) multi-junction solar cells are being developed at Spectrolab for use in space and near-space applications. Recently,…”
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First demonstration of monolithic InP-based InAlAs/InGaAsP/InGaAs triple junction solar cells by Woo, R. L., Hong, W. D., Mesropian, S., Leite, M. S., Atwater, H. A., Law, D. C.

“…Spectrolab has demonstrated the first lattice matched InAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction…”
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InAlAs epitaxial growth for wide band gap solar cells by Leite, M. S., Woo, R. L., Hong, W. D., Law, D. C., Atwater, H. A.

“…We demonstrate high quality InAlAs epitaxial growth by metalorganic vapor phase epitaxy and wide band gap solar cell fabrication. X-ray diffraction and…”
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