Search Results - "Woo, Byungki"

128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode by Yan Li, Seungpil Lee, Oowada, K., Hao Nguyen, Qui Nguyen, Mokhlesi, N., Hsu, C., Li, J., Ramachandra, V., Kamei, T., Higashitani, M., Pham, T., Honma, M., Watanabe, Y., Ino, K., Binh Le, Byungki Woo, Khin Htoo, Tai-Yuan Tseng, Pham, L., Tsai, F., Kwang-ho Kim, Yi-Chieh Chen, Min She, Jong Yuh, Chu, A., Chen Chen, Puri, R., Hung-Szu Lin, Yi-Fang Chen, Mak, W., Huynh, J., Jim Chan, Watanabe, M., Yang, D., Shah, G., Souriraj, P., Tadepalli, D., Tenugu, S., Gao, R., Popuri, V., Azarbayjani, B., Madpur, R., Lan, J., Yero, E., Feng Pan, Hong, P., Jang Yong Kang, Moogat, F., Yupin Fong, Cernea, R., Huynh, S., Trinh, C., Mofidi, M., Shrivastava, R., Quader, K.

“…This paper addresses challenges with improvements made over previous NAND generations to achieve high performance while maintaining a low fail-bit count (FBC)…”
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Development of a resonant repeater tag for the enhancement of sensitivity and specificity in a wireless eddy current sensing scheme by Woo, Byungki

“…Eddy current sensing has been successfully used in various applications from testing heat exchange tubes for nuclear power plants to assessing dielectric…”
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A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate by Li, Yan, Lee, Seungpil, Fong, Yupin, Pan, Feng, Kuo, Tien-Chien, Park, Jong, Samaddar, Tapan, Nguyen, Hao, Mui, Man, Htoo, Khin, Kamei, Teruhiko, Higashitani, Masaaki, Yero, Emilio, Kwon, Gyuwan, Kliza, Phil, Wan, Jun, Kaneko, Tetsuya, Maejima, Hiroshi, Shiga, Hitoshi, Hamada, Makoto, Fujita, Norihiro, Kanebako, Kazunori, Tam, Eugene, Koh, Anne, Lu, Iris, Kuo, Calvin, Pham, Trung, Huynh, Jonathan, Nguyen, Qui, Chibvongodze, Hardwell, Watanabe, Mitsuyuki, Oowada, Ken, Shah, Grishma, Woo, Byungki, Gao, Ray, Chan, James, Lan, James, Hong, Patrick, Peng, Liping, Das, Debi, Ghosh, Dhritiman, Kalluru, Vivek, Kulkarni, Sanjay, Cernea, Raul, Huynh, Sharon, Pantelakis, Dimitris, Wang, Chi-Ming, Quader, Khandker

“…We present an 8 MB/s 3-bit per cell (D3) NAND flash memory that uses the same number of ECC bytes as 2-bit per cell (D2) NAND. Since no extra columns are added…”
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