Search Results - "Wong, Thomas T. Y"

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  1. 1

    Development and Integration Testing of a Power Coupler for a 3.9-GHz Superconducting Multicell Cavity Resonator by Jianjian Li, Harms, Elvin R, Hocker, Andy, Khabiboulline, Timergali N, Solyak, Nikolay, Wong, Thomas T Y

    “…A coaxial power coupler for a superconducting multicell cavity resonator at 3.9 GHz has been developed. The cavity is intended to be employed as an accelerator…”
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    Journal Article
  2. 2

    Bandwidth Enhancement of a Compact Transverse Bilateral Helical Antenna With Parasitic Element for Mobile Device Applications by Celebi, Adem, Kenkel, Mark, Wong, Thomas T. Y.

    “…An electrically small antenna (ESA) designed for portable communication device applications is described. The antenna structure is based on the introduction of…”
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    Journal Article
  3. 3

    A New Characterization Technique for Extracting Parasitic Inductances of SiC Power MOSFETs in Discrete and Module Packages Based on Two-Port S-Parameters Measurement by Liu, Tianjiao, Wong, Thomas T. Y., Shen, Z. John

    Published in IEEE transactions on power electronics (01-11-2018)
    “…The parasitic inductances of silicon carbide (SiC) power mosfets have a major influence on their operation and circuit performance. They incur negative effects…”
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    Journal Article
  4. 4

    A Survey on Switching Oscillations in Power Converters by Liu, Tianjiao, Wong, Thomas T. Y., Shen, Z. John

    “…High-frequency power converters enabled by wide bandgap (WBG) and silicon semiconductor devices offer distinct advantages in power density and dynamic…”
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    Journal Article
  5. 5

    Modeling and Analysis of SiC MOSFET Switching Oscillations by Tianjiao Liu, Runtao Ning, Wong, Thomas T. Y., Shen, Z. John

    “…SiC MOSFETs exhibit extremely fast switching characteristics, which are unfortunately accompanied by undesirable switching oscillations. In this paper,…”
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    Journal Article
  6. 6

    Polarization Enhancement and Resonance Tuning Inferred From Theoretical Consideration and Numerical Simulation for a Semiconductor Nanoparticle With a Dielectric Shell by Yanlin Li, Zhijing Hu, Wong, Thomas T. Y.

    Published in IEEE transactions on nanotechnology (01-09-2018)
    “…Electric polarizations in metallic nanoparticles have enabled them to be employed in a variety of applications such as sensors, light trapping, polarizer,…”
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    Journal Article
  7. 7

    Charge Polarization and Current Distribution in a Conductive Particle in the Rayleigh Region by Tao Shen, Ming Yan, Wong, Thomas T. Y.

    “…An investigation of the interaction of a conductive sphere with an electromagnetic wave with attention given to space-charge effects would appear timely, as…”
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    Journal Article
  8. 8

    A new characterization technique for extracting parasitic inductances of fast switching power MOSFETs using two-port vector network analyzer by Tianjiao Liu, Runtao Ning, Wong, Thomas T. Y., Shen, Z. John

    “…This paper discusses a new technique to accurately characterize parasitic inductances of discrete fast switching MOSFETs based on S-parameters measurement…”
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    Conference Proceeding
  9. 9
  10. 10

    Experimental and Modeling Comparison of Different Damping Techniques to Suppress Switching Oscillations of SiC MOSFETs by Liu, Tianjiao, Zhou, Yuanfeng, Feng, Yanjun, Wong, Thomas T. Y., John Shen, Z.

    “…The switching oscillations associated with the ultrafast switching characteristics of silicon carbide (SiC) MOSFETs seriously limit the potential of high…”
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    Conference Proceeding
  11. 11

    Equivalent circuit models and model validation of SiC MOSFET oscillation phenomenon by Tianjiao Liu, Runtao Ning, Wong, Thomas T. Y., Shen, Z. John

    “…SiC MOSFETs are known to provide a better performance compared to Si IGBTs. However, they can also introduce undesirable behaviors like switching oscillations…”
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    Conference Proceeding
  12. 12

    Comparison of Impedance Measurement Techniques for Extracting Parasitic Inductance of SiC MOSFETs by Liu, Tianjiao, Feng, Yanjun, Zhou, Yuanfeng, Ning, Runtao, Wong, Thomas T.Y., Shen, Z. John

    “…The parasitic inductances of silicon carbide (SiC) MOSFETs have a significant influence on device performance, and limit the switching frequency and power…”
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    Conference Proceeding
  13. 13

    Extraction of parasitic inductances of SiC MOSFET power modules based on two-port S-parameters measurement by Tianjiao Liu, Yanjun Feng, Runtao Ning, Wendi Wang, Wong, Thomas T. Y., Shen, Z. John

    “…With silicon carbide (SiC) MOSFETs becoming commercial available, high switching frequency is a prevailing trend to increase the power density and efficiency…”
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    Conference Proceeding
  14. 14

    Extracting parasitic inductances of IGBT power modules with two-port S-parameter measurement by Tianjiao Liu, Yanjun Feng, Runtao Ning, Wong, Thomas T. Y., Shen, Z. John

    “…Parasitic inductances of IGBT power modules have a major influence in device operation and circuit performance. They often incur negative effects such as…”
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    Conference Proceeding
  15. 15

    A phase-shifting frequency discriminator employing dielectric resonator by Yuksel, Emine Yesim, Wong, Thomas T. Y.

    Published in Microwave and optical technology letters (20-01-2003)
    “…A planar circuit realization of a frequency discriminator based on single‐mode operation of the dielectric resonator is presented. Drawing on the…”
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    Journal Article
  16. 16

    Prospects of CMOS technology for millimeter-wave radio-over-fiber applications by Yong Zhang, Wong, Thomas T Y

    “…Millimeter-wave (mm-wave) Radio-over-Fiber (RoF) can be described as mm-wave wireless links in combination with large bandwidth fiber optic interconnections…”
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    Conference Proceeding
  17. 17

    Development of a chip-based micromachined THz-spectrometer by Xiaohuan Fu, Attenkofer, K., Wong, T. T. Y.

    “…We present a coplanar waveguide design with integrated photoconductive transceivers; the system is fabricated on a 1.4-μm-thick SiO 2 /Si 3 N 4 membrane…”
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    Conference Proceeding