Search Results - "Wolters, R. A. M."

Low-cost and nanoscale non-volatile memory concept for future silicon chips by Lankhorst, Martijn H. R, Ketelaars, Bas W. S. M. M, Wolters, R. A. M

“…Non-volatile 'flash' memories are key components of integrated circuits because they retain their data when power is interrupted. Despite their great…”
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Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD by BOOGAARD, A, KOVALGIN, A. Y, BRUNETS, I, AAMINK, A. A. I, HOLLEMAN, J, WOLTERS, R. A. M, SCHMITZ, J

“…Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150…”
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Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices by Brunets, I., Aarnink, A.A.I., Boogaard, A., Kovalgin, A.Y., Wolters, R.A.M., Holleman, J., Schmitz, J.

“…Non-volatile memory devices are realized using CVD and ALD of all active layers in a cluster tool. The floating gate consists of silicon nanocrystals. A high…”
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On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films by Van Bui, H., Kovalgin, A.Y., Wolters, R.A.M.

“…► We determined the resistivity of ultra-thin TiN films in the thickness range 0.65–20nm using both spectroscopic ellipsometry and electrical test structure…”
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Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range by Stavitski, N., van Dal, M.J.H., Lauwers, A., Vrancken, C., Kovalgin, A.Y., Wolters, R.A.M.

“…We present the data on specific silicide-to-silicon contact resistance (rho c ) obtained using optimized transmission-line model structures, processed for a…”
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Strain characterization of FinFETs using Raman spectroscopy by Kaleli, B., van Hemert, T., Hueting, R.J.E., Wolters, R.A.M.

“…Metal induced strain in the channel region of silicon (Si) fin-field effect transistor (FinFET) devices has been characterized using Raman spectroscopy. The…”
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Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode by Kaleli, B., Nguyen, M.D., Schmitz, J., Wolters, R.A.M., Hueting, R.J.E.

“…[Display omitted] •Thin film PZT/LNO stacks on an encapsulated TiN electrode are studied.•Promising ferroelectric behavior of these thin film layers is…”
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Net negative charge in low-temperature SiO2 gate dielectric layers by BOOGAARD, A, KOVALGIN, A. Y, WOLTERS, R. A. M

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Wafer temperature measurement in PVD systems using the Co–Si reaction by van Graven, A.M., Wolters, R.A.M.

“…It is becoming increasingly important to control the wafer temperature during IC processing, e.g. PVD. To measure the wafer temperature in PVD systems it is…”
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Characterization of titanium nitride layers by grazing-emission X-ray fluorescence spectrometry by Wiener, G., Kidd, S.J., Mutsaers, C.A.H., Wolters, R.A.M., de Bokx, P.K.

“…Grazing-emission X-ray fluorescence spectrometry is a new development in X-ray metrology instrumentation. The combination of wavelength-dispersive detection…”
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Ti/TiN/Ti(N) PVD liners for W-plug applications by Daniels, S, Wolters, R.A.M, van Zijl, J, Schildermans, J

“…A novel scheme for implementing a same chamber Ti/TiN/Ti(N) W-plug liner is introduced. The Ti(N) cap is the result of a TiN-coated target clean in an argon…”
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Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode: Micro/Nano Devices and Systems 2013: An open thematic journal issue by KALELI, B, NGUYEN, M. D, SCHMITZ, J, WOLTERS, R. A. M, HUETING, R. J. E

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Measurement of reaction heats using a polysilicon-based microcalorimetric sensor by Vereshchagina, E., Wolters, R.A.M., Gardeniers, J.G.E.

“…In this work we present a low-cost, low-power, small sample volume microcalorimetric sensor for the measurement of reaction heats. The polysilicon-based…”
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Specific Contact Resistance of Phase Change Materials to Metal Electrodes by Roy, Deepu, Zandt, M A A, Wolters, R A M

“…For phase change random access memory (PCRAM) cells, it is important to know the contact resistance of phase change materials (PCMs) to metal electrodes at the…”
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Small, low-ohmic RF MEMS switches with thin-film package by Wunnicke, O, Kwinten, H, van Leuken-Peters, L, in 't Zandt, M, Reimann, K, Aravindh, V, Suy, H M R, Goossens, M J, Wolters, R A M, Besling, W F A, van Beek, J T M, Steeneken, P G

“…We report on small, low-ohmic RF MEMS switches with a circular membrane actuator design. A low temperature process is used to manufacture both the MEMS switch…”
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An Area-Correction Model for Accurate Extraction of Low Specific Contact Resistance by Kovalgin, A. Y., Tiggelman, N., Wolters, R. A. M.

“…The parasitic factors that strongly influence the measurement accuracy of cross-bridge Kelvin resistors have been extensively discussed during the last few…”
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Silicon out-diffusion and aluminum in-diffusion in deviceswith atomic-layer deposited La 2 O 3 thin films by Jinesh, K. B., Lamy, Y., Wolters, R. A. M., Klootwijk, J. H., Tois, E., Roozeboom, F., Besling, W. F. A.

“…The use of aluminum as an electrode in metal-insulator-semiconductor devices containing lanthanum oxide is impaired by unacceptable leakage current levels…”
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Silicon out-diffusion and aluminum in-diffusion in devices with atomic-layer deposited La2O3 thin films by Jinesh, K. B., Lamy, Y., Wolters, R. A. M., Klootwijk, J. H., Tois, E., Roozeboom, F., Besling, W. F. A.

“…The use of aluminum as an electrode in metal-insulator-semiconductor devices containing lanthanum oxide is impaired by unacceptable leakage current levels…”
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Novel Test Structures for Dedicated Temperature Budget Determination by Faber, E. J., Wolters, R. A. M., Schmitz, J.

“…We present a novel method for determining the temperature budget of the process side of silicon substrates and chips, based on well-known silicide formation…”
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Electrical Characterization of Thin-Film Structures With Redeposited Sidewalls by Roy, D, in 't Zandt, M A A, Wolters, R A M

“…Accurate electrical characterization of test structures and devices requires identification and correction for parasitic current paths in the measurement…”
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