Search Results - "Wolstenholme, Graham R"

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  1. 1

    A Novel Isolation Scheme for Implementation in Very High Density AMG EPROM and FLASH EEPROM Arrays by Wolstenholme, Graham R., Bergemont, Albert

    “…In this paper a novel isolation scheme for implementation in alternate metal virtual ground (AMG) EPROM and Flash EEPROM arrays is described. It is shown that,…”
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    Conference Proceeding
  2. 2

    A fully modular 1 μm CMOS technology incorporating EEPROM, EPROM and interpoly capacitors by Cacharelis, Philip J, Hart, Michael J, Wolstenholme, Graham R, Carpenter, Roger D, Johnson, Ian F, Manley, Martin H

    “…This paper will describe a modular technology which uses a novel integration scheme to include double poly EEPROM, single poly EPROM and an interpoly…”
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    Conference Proceeding
  3. 3

    Polysilicon emitters for bipolar transistors: a review and re-evaluation of theory and experiment by Post, I.R.C., Ashburn, P., Wolstenholme, G.R.

    Published in IEEE transactions on electron devices (01-07-1992)
    “…A critical review is presented of the theories proposed in the literature to explain the current gain enhancement of polysilicon emitter bipolar transistors…”
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    Journal Article
  4. 4

    Effects of rapid thermal processing on the current gain and emitter resistance of polysilicon emitter bipolar transistors by Castaner, L.M., Ashburn, P., Wolstenholme, G.R.

    Published in IEEE electron device letters (01-01-1991)
    “…Results of measurements of base current and emitter resistance of polysilicon emitter transistors subjected to different rapid thermal anneal processes of the…”
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    Journal Article
  5. 5

    An investigation of the transition from polysilicon emitter to SIS emitter behavior by Wolstenholme, G.R., Browne, D.C., Ashburn, P., Landsberg, P.T.

    Published in IEEE transactions on electron devices (01-11-1988)
    “…The electrical effects of scaling the emitter-base junction depth of polysilicon emitter bipolar transistors are investigated. A range of devices with varying…”
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    Journal Article
  6. 6

    The asymptotes of the base current in bipolar devices by Castaner, L.M., Ashburn, P., Prat Vinas, L., Wolstenholme, G.R.

    Published in IEEE transactions on electron devices (01-11-1988)
    “…Simple analytical equations are derived for the asymptotes of the base current of a bipolar transistor. Three limiting asymptotes are considered, namely, that…”
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    Journal Article