Search Results - "Wolley, E.D."
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1
Characteristics of fast gate controlled switches
Published in 1964 International Electron Devices Meeting (1964)“…Gate turn-off np np devices have been fabricated and studied under various load current and gate turn-off current conditions. High-speed gate turn-off has been…”
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Conference Proceeding -
2
Fast recovery epitaxial diodes (FRED's)
Published in Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting (1988)“…A p/sup ++/nn/sup +/n/sup ++/ diode has been developed for high-frequency application. The p/sup ++/n junction is very abrupt as a result of a 1 mu m…”
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Conference Proceeding -
3
Dynamic plasma configuration of an inter-digitated thyristor
Published in 1970 International Electron Devices Meeting (1970)“…In order to maximize the dynamic characteristics such as frequency rating, turn-on time, and rate of rise of current rating in a thyristor, it is necessary to…”
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Conference Proceeding -
4
Gate turn-off in p-n-p-n devices
Published in IEEE transactions on electron devices (01-07-1966)“…A simple two-dimensional model for gated turn-off of a p-n-p-n device is used to derive an expression relating the storage time and the turn-off gain. The…”
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Journal Article -
5
Measurement and analysis of charge distributions and their decay in fast switching power rectifiers
Published in 1977 International Electron Devices Meeting (1977)“…A study is made on the effect that various lifetime killing techniques have on: a) the steady state charge distributions within power rectifiers, on b) the…”
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Conference Proceeding -
6
Study of charge dynamics in high speed power devices using free carrier absorption measurements
Published in 1976 International Electron Devices Meeting (1976)“…A technique is described whereby free-carrier infrared absorption can be used to measure the density of injected electrons and holes within a semiconductor…”
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Conference Proceeding -
7
High-voltage planar p-n junctions
Published in Proceedings of the IEEE (01-01-1967)“…A concentric ring junction has been devised to prevent surface breakdown of a planar junction. By properly choosing the spacing between the main junction and…”
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8
High voltage planar p-n junctions
Published in IEEE transactions on electron devices (01-11-1966)Get full text
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9
Measurement and analysis of carrier distribution and lifetime in fast switching power rectifiers
Published in IEEE transactions on electron devices (01-07-1980)“…Charge distributions in fast switching rectifiers are measured by free-carrier infrared absorption in both steady state and during transient operation. The…”
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10
Effect of Monoenergetic Fast Neutrons on n -Type Germanium
Published in Physical review (01-01-1958)Get full text
Journal Article