Search Results - "Wojtczuk, S.J."
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1
Self-biased boron-10 coated high-purity epitaxial GaAs thermal neutron detectors
Published in IEEE transactions on nuclear science (01-08-2000)“…Semiconductor thermal neutron detection devices based on /sup 10/B-coated high-purity GaAs films were investigated. The fundamental device consisted of…”
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Journal Article -
2
Radiation response of InP/Si and InGaP/GaAs space solar cells
Published in Solar energy materials and solar cells (1998)“…An analysis of the radiation response of state-of-the-art InP/Si, InGaP, and dual junction (DJ) InGaP/GaAs space solar cells under both electron and proton…”
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Journal Article -
3
Long-wavelength laser power converters for optical fibers
Published in Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 (1997)“…Measured responsivity and illuminated I-V data are presented for III-V In/sub x/Ga/sub 1-x/As-based photovoltaic cells with bandgaps of 1.42 eV (GaAs), 0.74…”
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Conference Proceeding -
4
Spectral response of InP/Si solar cells irradiated to high proton fluences
Published in Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997 (1997)“…InP/Si solar cells have been irradiated with 3 MeV protons to very large fluences where carrier removal, instead of decreases in minority carrier diffusion…”
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Conference Proceeding -
5
GaAs/Ge tandem-cell space concentrator development
Published in IEEE transactions on electron devices (01-02-1990)“…GaAs/Ge monolithic tandem two-junction concentrators are being developed by optimizing separate one-junction GaAs and Ge cells that simulate the GaAs top cell…”
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Journal Article -
6
Comparison of windows for P-on-N InGaP solar cells
Published in Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9) (1993)“…Indium gallium phosphide (In/sub 0.49/Ga/sub 0.51/P, /spl ap/1.9 eV) lattice matched to GaAs and Ge is useful as a top cell material for tandem solar cells…”
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Conference Proceeding Journal Article -
7
Current status of low-temperature radiator thermophotovoltaic devices
Published in Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 (1996)“…The current performance status of low-temperature radiator (<1000/spl deg/C) thermophotovoltaic (TPV) devices is presented. For low-temperature radiators, both…”
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Conference Proceeding -
8
Development of InP solar cells on inexpensive Si wafers
Published in Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) (1994)“…Both PN and NP InP solar cells on Si wafers were made with AM0 one-sun efficiencies up to 11%. Cells were irradiated to an equivalent fluence of 4/spl…”
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Conference Proceeding -
9
High-efficiency heteroepitaxial solar cells for space power applications
Published in Proceedings of the 24th Intersociety Energy Conversion Engineering Conference (1989)“…The experimental results for several technical approaches aimed at achieving highly efficient solar cells for space-power applications are reported…”
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Conference Proceeding -
10
The radiation response of heteroepitaxial p/sup +/n InP/Si solar cells
Published in Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC) (1994)“…The 1 MeV electron irradiation-induced degradation of both heteroepitaxial and homoepitaxial p/n InP solar cells grown by MOCVD is presented. The…”
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Conference Proceeding -
11
Advances in high-efficiency GaAs solar cells
Published in IEEE Conference on Photovoltaic Specialists (1990)“…The development of GaAs solar cells having a 1-sun, AM1.5 efficiency of 24.8% and a concentrator having an AM1.5 efficiency of 28.7% at 200 suns (both…”
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Conference Proceeding