Search Results - "Wojtczuk, S.J."

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  1. 1

    Self-biased boron-10 coated high-purity epitaxial GaAs thermal neutron detectors by McGregor, D.S., Vernon, S.M., Gersch, H.K., Markham, S.M., Wojtczuk, S.J., Wehe, D.K.

    Published in IEEE transactions on nuclear science (01-08-2000)
    “…Semiconductor thermal neutron detection devices based on /sup 10/B-coated high-purity GaAs films were investigated. The fundamental device consisted of…”
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    Journal Article
  2. 2

    Radiation response of InP/Si and InGaP/GaAs space solar cells by Walters, R.J., Cotal, H.L, Messenger, S.R., Burke, E.A., Wojtczuk, S.J., Serreze, H.B., Sharps, P.R., Timmons, M.L., Iles, P., Yeh, Y.C.M.

    “…An analysis of the radiation response of state-of-the-art InP/Si, InGaP, and dual junction (DJ) InGaP/GaAs space solar cells under both electron and proton…”
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    Journal Article
  3. 3

    Long-wavelength laser power converters for optical fibers by Wojtczuk, S.J.

    “…Measured responsivity and illuminated I-V data are presented for III-V In/sub x/Ga/sub 1-x/As-based photovoltaic cells with bandgaps of 1.42 eV (GaAs), 0.74…”
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    Conference Proceeding
  4. 4

    Spectral response of InP/Si solar cells irradiated to high proton fluences by Messenger, S.R., Xapsos, M.A., Walters, R.J., Cotal, H.L., Wojtczuk, S.J., Serreze, H.B., Summers, G.P.

    “…InP/Si solar cells have been irradiated with 3 MeV protons to very large fluences where carrier removal, instead of decreases in minority carrier diffusion…”
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    Conference Proceeding
  5. 5

    GaAs/Ge tandem-cell space concentrator development by Wojtczuk, S.J., Tobin, S.P., Keavney, C.J., Bajgar, C., Sanfacon, M.M., Geoffroy, L.M., Dixon, T.M., Vernon, S.M., Scofield, J.D., Ruby, D.S.

    Published in IEEE transactions on electron devices (01-02-1990)
    “…GaAs/Ge monolithic tandem two-junction concentrators are being developed by optimizing separate one-junction GaAs and Ge cells that simulate the GaAs top cell…”
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    Journal Article
  6. 6

    Comparison of windows for P-on-N InGaP solar cells by Wojtczuk, S.J., Vernon, S.M., Sanfacon, M.M.

    “…Indium gallium phosphide (In/sub 0.49/Ga/sub 0.51/P, /spl ap/1.9 eV) lattice matched to GaAs and Ge is useful as a top cell material for tandem solar cells…”
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    Conference Proceeding Journal Article
  7. 7

    Current status of low-temperature radiator thermophotovoltaic devices by Charache, G.W., Egley, J.L., Danielson, L.R., DePoy, D.M., Baldasaro, P.F., Campbell, B.C., Hui, S., Fraas, L.M., Wojtczuk, S.J.

    “…The current performance status of low-temperature radiator (<1000/spl deg/C) thermophotovoltaic (TPV) devices is presented. For low-temperature radiators, both…”
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    Conference Proceeding
  8. 8

    Development of InP solar cells on inexpensive Si wafers by Wojtczuk, S.J., Karam, N.H., Gouker, P., Colter, P., Vernon, S.M., Summers, G.P., Walters, R.L., Statler, R.

    “…Both PN and NP InP solar cells on Si wafers were made with AM0 one-sun efficiencies up to 11%. Cells were irradiated to an equivalent fluence of 4/spl…”
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    Conference Proceeding
  9. 9

    High-efficiency heteroepitaxial solar cells for space power applications by Vernon, S.M., Tobin, S.P., Keavney, C.J., Wojtczuk, S.J.

    “…The experimental results for several technical approaches aimed at achieving highly efficient solar cells for space-power applications are reported…”
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    Conference Proceeding
  10. 10

    The radiation response of heteroepitaxial p/sup +/n InP/Si solar cells by Walters, R.J., Messenger, S.R., Panunto, M., Summers, G.P., Wojtczuk, S.J., Gouker, P.

    “…The 1 MeV electron irradiation-induced degradation of both heteroepitaxial and homoepitaxial p/n InP solar cells grown by MOCVD is presented. The…”
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    Conference Proceeding
  11. 11

    Advances in high-efficiency GaAs solar cells by Tobin, S.P., Vernon, S.M., Wojtczuk, S.J., Bajgar, C., Sanfacon, M.M., Dixon, T.M.

    “…The development of GaAs solar cells having a 1-sun, AM1.5 efficiency of 24.8% and a concentrator having an AM1.5 efficiency of 28.7% at 200 suns (both…”
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    Conference Proceeding