Search Results - "Woelk, Egbert"

Performance of a central delivery system for metalorganic precursors by Woelk, Egbert

“…Currently, the III-V compound semiconductor epi industry uses roughly 10,000 kg of TMGa per year. Virtually all of this TMGa is distributed in stainless-steel…”
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Antimony surfactant for epitaxial growth of SiGe buffer layers at high deposition temperatures by Storck, Peter, Vorderwestner, Martin, Kondratyev, Alexey, Talalaev, Roman, Amamchyan, Art, Woelk, Egbert

“…The effect of Sb on the growth behavior and the layer quality of graded SiGe buffer layers was studied at high-temperature CVD conditions. Sb was provided as…”
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Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE by Shenai, Deo V., DiCarlo, Ronald L., Power, Michael B., Amamchyan, Artashes, Goyette, Randall J., Woelk, Egbert

“…Commercial strategy to graded SiGe buffer layers and “strained silicon” involves passing germane (GeH 4) gas or germanium tetrachloride (GeCl 4) vapors as the…”
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Designing novel organogermanium OMVPE precursors for high-purity germanium films by Woelk, Egbert, Shenai-Khatkhate, Deodatta V., DiCarlo, Ronald L., Amamchyan, Artashes, Power, Michael B., Lamare, Bruno, Beaudoin, Grégoire, Sagnes, Isabelle

“…Germanium and gallium arsenide have long been used in semiconductor structures and electronic devices. While organometallic vapor phase epitaxy (OMVPE) of…”
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Stable vapor transportation of solid sources in MOVPE of III–V compound semiconductors by Shenai-Khatkhate, Deodatta V., DiCarlo, Ronald L., Marsman, Charles J., Polcari, Robert F., Ware, Robert A., Woelk, Egbert

“…Trimethylindium (TMI), in spite of being a solid, has remained the precursor of choice for the deposition of indium containing layers by MOVPE. However,…”
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Exceptionally stable vapor delivery of trimethylindium under intense OMVPE growth conditions by Shenai-Khatkhate, Deodatta V., Ware, Robert A., DiCarlo, Ronald L., Polcari, Robert F., Marsman, Charles J., Woelk, Egbert, Keiter, Alan G.

“…Trimethylindium (TMI) is the preferred precursor for the deposition of indium containing layers by organo-metallic vapor phase epitaxy (OMVPE) because of its…”
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Large scale production of indium antimonide film for position sensors in automobile engines by WOELK, E, JÜRGENSEN, H, ROLPH, R, ZIELINSKI, T

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Measurement of low resistive ohmic contacts on semiconductors by Woelk, E.G., Krautle, H., Beneking, H.

“…Macroscopic analog models of planar contacts to semiconductor layers were made and equipotential lines underneath the contact were traced. Voltage drop and…”
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Contacts on GalnAs by Kraulte, H., Woelk, E., Selders, J., Beneking, H.

“…The specific contact resistance ρ c of Ni/Au-Ge/Ni and Ni/Au-Sn/Ni layers on n-GaInAs and Ni/Au-Mg/Ni and Ni/Au-Zu/Ni on p-GaInAs are measured for different…”
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