Search Results - "Wisseman, W.R."

Foreword (Dec. 1984 [T-MTT]) by Wisseman, W.R.

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Foreword (Dec. 1984 [T-MTT]) by Wisseman, W.R.

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Foreword by Wisseman, W.R.

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Foreword by Wisseman, W.R.

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Foreword by Wisseman, W.R., Oakes, J.G.

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Foreword by Wisseman, W.R., Oakes, J.G.

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Message from the General Chairman [1985 MCS] by Wisseman, W.R.

“…Presents the introductory welcome message from the conference proceedings…”
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Power GaAs FETs by Wisseman, W.R.

“…This paper reviews progress in the development of GaAs FETs for microwave power applications. At Texas Instruments over 5W cw output power has been achieved…”
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Monolithic Microwave Integrated Circuits: An Historical Perspective by McQuiddy, D.N., Wassel, J.W., LaGrange, J.B., Wisseman, W.R.

“…Monolithic microwave integrated-circuit (MMIC) technology as it exists today has evolved from events that occurred during the middle-to-late 1950's and early…”
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GaAs microwave devices and circuits with submicron electron-beam defined features by Wisseman, W.R., Macksey, H.M., Brehm, G.E., Saunier, P.

“…This paper describes the fabrication and application of GaAs FET's, both as discrete microwave devices and as the key active components in monolithic microwave…”
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GaAs Power MESFET's: Design, Fabrication, and Performance by Dilorenzo, J.V., Wisseman, W.R.

“…This paper reviews the state of the art of power GaAs MESFET's. Items that will be covered are the operating principles of the device from a material and…”
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Dependence of GaAs power MESFET microwave performance on device and material parameters by Macksey, H.M., Adams, R.L., McQuiddy, D.N., Shaw, D.W., Wisseman, W.R.

“…The results of recent X-band measurements on GaAs Power FET's are described. These devices are fabricated with a simple planar process and at least 1-W output…”
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X-Band MIC GaAs FET Power Amplifier by Tserng, H.Q., Sokolov, V., Macksey, H.M., Wisseman, W.R.

“…The microstrip circuit development of an X-band, one watt, 22 dB gain GaAs FET amplifier will be discussed. Microwave performance characteristics such as…”
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GaAs Schottky-Read diodes for x-band operation by Wisseman, W.R., Shaw, D.W., Adams, R.L., Hasty, T.E.

“…High-efficiency performance of GaAs Schottky-Read IMPATT diodes has been observed at X-band frequencies. The highest efficiency measured was 26.1 percent with…”
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Microwave Power GaAs FET Amplifiers by Hua Quen Tserng, Sokolov, V., Macksey, H.M., Wisseman, W.R.

“…The development of broad-band microwave amplifiers using state-of-the-art GaAs power FET's covering the 6-12-GHz frequency band is presented. A unique circuit…”
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X-band MIC GaAs IMPATT amplifier module by McQuiddy, D.N., Wisseman, W.R.

“…A compact (2.0 by 1.6 in), light weight (2.1 oz), microwave integrated circuit (MIC) GaAs IMPATT amplifier module having 3.6-W pulsed output power with a gain…”
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A 12-W GaAs Read-Diode Amplifier at X Band by Hua Quen Tserng, Jr, Coleman, D.J., Doerbeck, F.H., Don W. Shaw, Wisseman, W.R.

“…Multiple-mesa GaAs Read diodes have been incorporated in a single-stage microstrip amplifier module at X band. Stable CW amplification with an output power of…”
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Characterization of GaAs Schottky-read IMPATT diodes by Tserng, H.Q., Wisseman, W.R., Hasty, T.E.

“…In a recent paper, the oscillator performance of GaAs Schottky-Read diodes of the type metal - n 1 n 2 n + was given (4). Efficiencies as high as 26% were…”
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X-band performance of high efficiency GaAs Schottky barrier IMPATT diodes by Wisseman, W.R., Shaw, D.W., Adams, R.L., Hasty, T.E.

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Microwave oscillations in epitaxial layers of GaAs by Hasty, T.E., Cunningham, P.A., Wisseman, W.R.

“…Microwave oscillations of the type reported by Gunn have been observed in samples prepared from epitaxial layers of gallium arsenide. Descriptions of sample…”
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