High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

We report the first CW Ka-band radio-frequency (RF) power measurements at 35 GHz from a passivated Al 0.82 In 0.18 N/GaN high-electron mobility transistor on SiC with 9.8-nm-thin barrier. This device delivered a maximum of 5.8 W/mm with a power-added efficiency of 43.6% biased at V DS = 20 V and 10%...

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Bibliographic Details
Published in:	IEEE electron device letters Vol. 31; no. 1; pp. 2 - 4
Main Authors:	Crespo, A., Bellot, M.M., Chabak, K.D., Gillespie, J.K., Jessen, G.H., Miller, V., Trejo, M., Via, G.D., Walker, D.E., Winningham, B.W., Smith, H.E., Cooper, T.A., Gao, X., Guo, S.
Format:	Journal Article
Language:	English
Published:	IEEE 01-01-2010
Subjects:	Aluminum indium nitride Chemical vapor deposition Decision support systems Gallium nitride HEMTs high-electron mobility transistor (HEMT) millimeter-wave transistors MODFETs Ohmic contacts Power measurement Radio frequency Silicon carbide Transconductance
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Summary:	We report the first CW Ka-band radio-frequency (RF) power measurements at 35 GHz from a passivated Al 0.82 In 0.18 N/GaN high-electron mobility transistor on SiC with 9.8-nm-thin barrier. This device delivered a maximum of 5.8 W/mm with a power-added efficiency of 43.6% biased at V DS = 20 V and 10% I DSS when matched for power at CW. The device was grown by metal-organic chemical vapor deposition with 2.8-¿m source-drain spacing and a gate length of 160 nm. An excellent ohmic contact was obtained with an R c of 0.62 ¿·mm. The maximum extrinsic transconductance was 354 mS/mm with an I DSS of 1197 mA/mm at a V GS of 0 V, an ft of 79 GHz, and an f max of 113.8 GHz.
Bibliography:	ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2009.2034875