Search Results - "Wilmsen, C. W."

VCSELs bonded directly to foundry fabricated GaAs smart pixel arrays by Rui Pu, Hayes, E.M., Jurrat, R., Wilmsen, C.W., Choquette, K.D., Hou, H.Q., Geib, K.M.

“…This letter reports the flip-chip bonding of an 8×8 array of free standing VCSELs to a foundry fabricated GaAs metal-semiconductor field-effect transistor…”
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Optoelectronic exclusive-OR using hybrid integration of phototransistors and vertical cavity surface emitting lasers by Beyette, F.R., Geib, K.M., St. Clair, C.M., Feld, S.A., Wilmsen, C.W.

“…Heterojunction phototransistors and surface-emitting lasers were used to demonstrate two new optoelectronic circuits that implement the exclusive-OR (XOR)…”
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New model for slow current drift in InP metal-insulator-semiconductor field-effect transistors by GOODNICK, S. M, HWANG, T, WILMSEN, C. W

“…The drift in channel current of SiO2/InP metal-insulator-semiconductor field-effect transistors has been calculated using a model in which electrons…”
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Characterization of β‐SiC surfaces and the Au/SiC interface by Mizokawa, Yusuke, Geib, K. M., Wilmsen, C. W.

“…The chemistry of the β‐SiC surface has been studied with Auger electron spectroscopy (AES) and x‐ray photoemission spectroscopy (XPS). The chemically etched…”
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Optoelectronic parallel processing with surface-emitting lasers and free-space interconnects by Irakliotis, L.J., Feld, S.A., Beyette, F.R., Mitkas, P.A., Wilmsen, C.W.

“…Parallel optoelectronic processing that uses smart pixel arrays and free space interconnections may provide an attractive alternative to applications that…”
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Optoelectronic exclusive-OR (XOR) gate by Beyette, F.R., Geib, K.M., Feld, S.A., Hafich, M.J., An, X., Robinson, G.Y., Wilmsen, C.W.

“…An optoelectronic circuit that implements the exclusive-OR (XOR) logic function is described. The circuit uses two unmatched heterojunction phototransistors…”
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Two wavelength optically controlled latch and AND gate by AN, X, GEIB, K. M, HAFICH, M. J, CRUMBAKER, T. E, SILVESTRE, P, BEYETTE, F. R, FELD, S. A, ROBINSON, G. Y, WILMSEN, C. W

“…A new optical device which functions either as a gated latch or an AND gate is demonstrated. This device utilizes two different wavelengths of input light and…”
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Electrical and optical feedback in an InGaAs/InP light-amplifying optical switch (LAOS) by Feld, S.A., Beyette, F.R., Hafich, M.J., Lee, H.Y., Robinson, G.Y., Wilmsen, C.W.

“…A circuit model for optical and electrical feedback has been developed to investigate the cause of negative differential resistance (NDR) switching in a series…”
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The chemistry of sulfur passivation of GaAs surfaces by Shin, J., Geib, K. M., Wilmsen, C. W., Lilliental‐Weber, Z.

“…Recently, sulfur treatments have been reported which electrically passivate the GaAs and InP surfaces. Since then, a variety of analytical techniques have been…”
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Highly compact integrated optical set-reset memory pixels for parallel processing arrays by An, X., Geib, K.M., Hafich, M.J., Beyette, F.R., Field, S.A., Robinson, G.Y., Wilmsen, C.W.

“…An integrated optoelectronic device with a single-mesa structure, which functions as an optical set-reset memory or an optical inverter, is reported. The…”
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Estimation of the band gap of InPO4 by WAGER, J. F, WILMSEN, C. W, KAZMERSKI, L. L

“…The band gap of a thin layer of InPO4 was estimated to be 4.5 eV using a novel approach employing ultraviolet photoelectron spectroscopy and electron energy…”
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Integrated optical NOR gate by Beyette, F.R., Geib, K.M., Feld, S.A., An, X., Hafich, M.J., Robinson, G.Y., Wilmsen, C.W.

“…A two-input optical NOR gate structure is proposed and demonstrated. The NOR gate is fabricated from a vertically integrated heterojunction phototransistor and…”
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Surface roughness at the Si(100)-SiO2 interface by GOODNICK, S. M, FERRY, D. K, WILMSEN, C. W, LILIENTAL, Z, FATHY, D, KRIVANEK, O. L

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Hybrid integration of VCSEL's to CMOS integrated circuits by Pu, R., Duan, C., Wilmsen, C.W.

“…Three hybrid integration techniques for bonding vertical-cavity surface-emitting lasers (VCSELs) to CMOS integrated circuit chips have been developed and…”
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Thermal resistance of VCSELs bonded to integrated circuits by Pu, R., Wilmsen, C.W., Geib, K.M., Choquette, K.D.

“…The thermal resistance of vertical-cavity surface-emitting lasers (VCSELs) flip chip bonded to GaAs substrates and CMOS integrated circuits has been measured…”
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An improved anodic oxide insulator for InP metal-insulated-semiconductor field-effect transistors by Laughlin, D. H., Wilmsen, C. W.

“…Highly insulation oxide layers have been anodically grown on InP. The oxide was grown in an electrolyte of pH<2.5 which causes In203 to dissolve out of the…”
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Switching light with light by Wilmsen, C.W., Feld, S.A., Beyette, F.R., An, X.

“…The basic characteristics of the light amplifying optical switch (LAOS) are explained. The LAOS, as compared to its electronic counterparts, will substantially…”
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Sulfur bonding to GaAs by Shin, J., Geib, K. M., Wilmsen, C. W.

“…This paper presents experimental results on sulfur bonding to etched GaAs surfaces which have an As/Ga ratio ranging from 0.6 to 6.0. The source of the sulfur…”
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Surface topography of oxides on InP thermally grown at high temperatures by McLaren, J. J., Nelson, A., Geib, K., Gann, R., Wilmsen, C. W.

“…The surface topography of the thermal oxides on InP are shown to blister for growth temperatures somewhat above 600 °C. It appears that the oxide softens…”
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Effects of annealing on anodic oxides of GaP by Kato, Y., Geib, K. M., Gann, R. G., Brusenback, P. R., Wilmsen, C. W.

“…The surface topography and the chemical composition of anodic oxides on GaP have been studied. The surface of the as grown anodic oxide was featureless but…”
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