Molybdenum oxide and molybdenum oxide-nitride back contacts for CdTe solar cells

Molybdenum oxide and molybdenum oxide-nitride back contacts for CdTe solar cells

Molybdenum oxide (MoOx) and molybdenum oxynitride (MoON) thin film back contacts were formed by a unique ion-beam sputtering and ion-beam-assisted deposition process onto CdTe solar cells and compared to back contacts made using carbon–nickel (C/Ni) paint. Glancing-incidence x-ray diffraction and x-...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vol. 33; no. 4
Main Authors: Drayton, Jennifer A., Williams, Desiree D., Geisthardt, Russell M., Cramer, Corson L., Williams, John D., Sites, James R.
Format: Journal Article
Language:English
Published: United States 01-07-2015
Subjects:
CADMIUM TELLURIDES
DEPOSITION
DIFFUSION BARRIERS
ELECTROLUMINESCENCE
ENGINEERING
ION BEAMS
MATERIALS SCIENCE
MOLYBDENUM OXIDES
NICKEL
SOLAR CELLS
SOLAR ENERGY
SPUTTERING
STRESSES
TEMPERATURE DEPENDENCE
THIN FILMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY
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Summary:Molybdenum oxide (MoOx) and molybdenum oxynitride (MoON) thin film back contacts were formed by a unique ion-beam sputtering and ion-beam-assisted deposition process onto CdTe solar cells and compared to back contacts made using carbon–nickel (C/Ni) paint. Glancing-incidence x-ray diffraction and x-ray photoelectron spectroscopy measurements show that partially crystalline MoOx films are created with a mixture of Mo, MoO2, and MoO3 components. Lower crystallinity content is observed in the MoON films, with an additional component of molybdenum nitride present. Three different film thicknesses of MoOx and MoON were investigated that were capped in situ in Ni. Small area devices were delineated and characterized using current–voltage (J-V), capacitance–frequency, capacitance–voltage, electroluminescence, and light beam-induced current techniques. In addition, J-V data measured as a function of temperature (JVT) were used to estimate back barrier heights for each thickness of MoOx and MoON and for the C/Ni paint. Characterization prior to stressing indicated the devices were similar in performance. Characterization after stress testing indicated little change to cells with 120 and 180-nm thick MoOx and MoON films. However, moderate-to-large cell degradation was observed for 60-nm thick MoOx and MoON films and for C/Ni painted back contacts.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.4922576