Search Results - "Willems van Beveren, Laurens H"
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Spin–Orbit Interaction in a Two-Dimensional Hole Gas at the Surface of Hydrogenated Diamond
Published in Nano letters (14-01-2015)“…Hydrogenated diamond possesses a unique surface conductivity as a result of transfer doping by surface acceptors. Yet, despite being extensively studied for…”
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Strong and Tunable Spin–Orbit Coupling in a Two-Dimensional Hole Gas in Ionic-Liquid Gated Diamond Devices
Published in Nano letters (08-06-2016)“…Hydrogen-terminated diamond possesses due to transfer doping a quasi-two-dimensional (2D) hole accumulation layer at the surface with a strong, Rashba-type…”
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G-factor and well width variations for the two-dimensional hole gas in surface conducting diamond
Published in Applied physics letters (22-01-2018)“…Hydrogen-terminated diamond possesses a quasi two-dimensional, sub-surface hole accumulation layer with a strong and tunable spin-orbit coupling due to surface…”
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Progress Towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures
Published 12-03-2013“…In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK)…”
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Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs
Published 06-05-2011“…Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on, 221-222 (2010) We demonstrate radio frequency (RF) readout of…”
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Fabrication and Investigation of Nitrogen doped Ultra-Nano-Crystalline Diamond Hall-bar Devices
Published 14-03-2013“…Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a…”
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Low temperature transport on surface conducting diamond
Published 20-03-2013“…Magneto-transport measurements were performed on surface conducting hydrogen-terminated diamond (100) hall bars at temperatures between 0.1-5 K in magnetic…”
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Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime
Published 07-10-2011“…Materials Science Forum Vol. 700, Advanced Materials and Nanotechnology (AMN-5), 2011 conference on, 93-95 (2012) A common issue in low temperature…”
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Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime
Published 16-09-2010“…Appl. Phys. Lett. 97, 152102 (2010) (3 pages) We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows…”
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Development Of nanowire devices with quantum functionalities
Published in 2014 Conference on Optoelectronic and Microelectronic Materials & Devices (01-12-2014)“…We describe a process to fabricate doped silicon nanowires in a 4-terminal setup…”
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Conference Proceeding -
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CMOS-Compatible Nanowire Biosensors
Published 21-02-2013“…Graphene, Carbon Nanotubes, and Nanostructures: Techniques and Applications, ISBN 9781466560567, CRC Press, Taylor & Francis Group. Published February 15, 2013…”
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