Evaluation of High-Temperature High-Frequency GaN-Based LC-Oscillator Components

In this work, an evaluation of the performance of discrete elements intended for an <inline-formula> <tex-math notation="LaTeX">{L} </tex-math></inline-formula>-band high-temperature GaN-based LC -oscillator is carried out between room temperature and 300 °C. GaN hi...

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Bibliographic Details
Published in:	IEEE transactions on electron devices Vol. 67; no. 11; pp. 4587 - 4591
Main Authors:	Ottaviani, A., Palacios, P., Zweipfennig, T., Alomari, M., Beckmann, C., Bierbusse, D., Wieben, J., Ehrler, J., Kalisch, H., Negra, R., Vescan, A., Burghartz, J. N.
Format:	Journal Article
Language:	English
Published:	New York IEEE 01-11-2020 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:	AlGaN/GaN Capacitors Current leakage Frequency measurement Gallium nitrides HEMTs High electron mobility transistors High temperature high-electron mobility transistor (HEMT) Inductors Metals metal–insulator–metal (MIM) capacitors MODFETs oscillator Parameters Performance evaluation planar inductors Q factors Resistors Room temperature Sapphire Semiconductor devices Substrates Temperature Temperature dependence Temperature measurement thin film Thin films
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Summary:	In this work, an evaluation of the performance of discrete elements intended for an <inline-formula> <tex-math notation="LaTeX">{L} </tex-math></inline-formula>-band high-temperature GaN-based LC -oscillator is carried out between room temperature and 300 °C. GaN high-electron mobility transistors (HEMTs) on sapphire substrate, metal-insulator-metal (MIM) capacitors, thin-film inductors, and resistors on sapphire and quartz substrates are fabricated and characterized through dc and <inline-formula> <tex-math notation="LaTeX">{S} </tex-math></inline-formula>-parameter measurements up to 20 GHz. The GaN HEMTs on sapphire achieved <inline-formula> <tex-math notation="LaTeX">{f}_{\text {t}} </tex-math></inline-formula> of 18 GHz and <inline-formula> <tex-math notation="LaTeX">{f}_{\text {max}} </tex-math></inline-formula> of 30 GHz at room temperature and <inline-formula> <tex-math notation="LaTeX">{f}_{\text {t}} </tex-math></inline-formula> of 11 GHz and <inline-formula> <tex-math notation="LaTeX">{f}_{\text {max}} </tex-math></inline-formula> of 21 GHz at 300 °C while maintaining dc gate leakage below 0.1 mA/mm at 300 °C. MIM capacitors are characterized at temperatures up to 300 °C and at frequencies up to 10 MHz, showing stable capacitance values with changes as small as 1.37% over the entire temperature range. Planar spiral inductors are characterized using <inline-formula> <tex-math notation="LaTeX">{S} </tex-math></inline-formula>-parameter measurements up to 20 GHz and 300 °C. While a temperature stable maximum oscillation frequency above 1 GHz is achieved, the quality factor degrades by up to 48% at 300 °C. A detailed analysis of the temperature dependence of the inductor is given.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2020.3016918