Search Results - "Widianto, Muhammad Yusuf Hakim"

Analysis of band structures of phosphorene and bismuthene based on the double group theory by Widianto, Muhammad Yusuf Hakim, Saito, Mineo

“…Abstract We study band structures of group-V two-dimensional materials, i.e. phosphorene and bismuthene, by carrying out first-principles calculations…”
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Electronic band structures of group-IV two-dimensional materials: Spin-orbit coupling and group theoretical analysis by Putri, Salsabila Amanda, Yamaguchi, Yuki, Ariasoca, Thomas Aquino, Widianto, Muhammad Yusuf Hakim, Tagami, Katsunori, Saito, Mineo

“…•Band structures of group-IV two-dimensional materials are studied by first-principles calculations within SOC.•The method to identify irreducible…”
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Electronic structures of puckered bilayer group-V two-dimensional materials: group theoretical analysis by Widianto, Muhammad Yusuf Hakim, Zaharo, Aflah, Namari, Nuning Anugrah Putri, Saito, Mineo

“…Abstract We systematically study geometries and band structures of two-dimensional group-V bilayer materials, i.e. phosphorene, arsenene and antimonene. Among…”
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Dependence of crystallization of Brownian particles by sedimentation on the force direction by Sato, Masahide, Widianto, Muhammad Yusuf Hakim, Kanatsu, Youhei

“…The formation of a large close-packed colloidal crystal with the fcc structure was observed during the sedimentation of colloidal particles in an inverted…”
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Corrigendum to “Electronic band structures of group-IV two-dimensional materials: Spin-orbit coupling and group theoretical analysis” [Surface Science 714 (2021) 121917] by Widianto, Muhammad Yusuf Hakim, Putri, Salsabila Amanda, Yamaguchi, Yuki, Ariasoca, Thomas Aquino, Tagami, Katsunori, Saito, Mineo

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Spin-polarized cation monovacancies in wurtzite structure semiconductors: first-principles study by Widianto, Muhammad Yusuf Hakim, Kadarisman, Hana Pratiwi, Yatmeidhy, Amran Mahfudh, Saito, Mineo

“…We study spin-polarized cation vacancies in wurtzite structure semiconductors (BeO, ZnO, ZnS, CdS, BN, AlN, GaN and GaP) by using first-principles calculations…”
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