Search Results - "Wicks, GW"

Colliding-pulse passive harmonic mode-locking in a femtosecond Yb-doped fiber laser with a semiconductor saturable absorber by Deng, Y, Koch, M, Lu, F, Wicks, G, Knox, W

“…We demonstrate a passive harmonic mode-locked femtosecond Yb-doped fiber laser employing a semiconductor saturable absorber in a colliding-pulse configuration…”
Get full text

Oxidation study of GaN using x-ray photoemission spectroscopy by Watkins, N. J., Wicks, G. W., Gao, Yongli

“…The oxidation of GaN at room temperature was investigated using x-ray photoemission spectroscopy. The onset of oxidation is observed at 105 Langmuir (L=10−6…”
Get full text

Hot electron relaxation time in GaN by Ye, Hong, Wicks, G. W., Fauchet, P. M.

Get full text

Hot hole relaxation dynamics in p -GaN by Ye, Hong, Wicks, G. W., Fauchet, P. M.

“…The hot hole relaxation dynamics is studied in a Mg-doped p-type GaN film grown by molecular-beam epitaxy on sapphire. A nondegenerate femtosecond pump-probe…”
Get full text

Molecular beam epitaxial growth of BGaAs ternary compounds by GUPTA, V. K, KOCH, M. W, WATKINS, N. J, GAO, Y, WICKS, G. W

“…BxGa1-xAs ternary compounds with B compositions varying up to x = 1% have been grown by MBE. RHEED and double crystal XRD measurements show that grown layers…”
Get full text

Low-voltage InAsP/InAs HBT and metamorphic InAs BJT devices grown by molecular beam epitaxy by Averett, K.L., Wu, X., Koch, M.W., Wicks, G.W.

“…Two advances in InAs-based bipolar transistor technology are reported. Metamorphic InAs bipolar junction transistors (BJTs), grown on semi-insulating GaAs…”
Get full text

Nanofabrication of optical structures and devices for photonics and biophotonics by Boyd, R. W., Heebner, J. E., Lepeshkin, N. N., Park, Q.-H., Schweinsberg, A., Wicks, G. W., Baca, A. S., Fajardo, J. E., Hancock, R. R., Lewis, M. A., Boysel, R. M., Quesada, M., Welty, R., Bleier, A. R., Treichler, J., Slusher, R. E.

“…Nanofabrication offers promise for the design of artificial materials with optical properties unlike those of materials occurring in nature and for the design…”
Get full text

High-order azimuthal spatial modes of concentric-circle-grating surface-emitting semiconductor lasers by Olson, Craig, Greene, Pamela L., Wicks, Gary W., Hall, Dennis G., Rishton, Steve

“…We report the emission properties of concentric-circle-grating, surface-emitting (CCGSE), distributed-feedback semiconductor lasers oscillating in single…”
Get full text

Physical processes of current gain in InAs bipolar junction transistors by Wu, X., Averett, K.L., Maimon, S., Koch, M.W., Wicks, G.W.

“…InAs bipolar junction transistors (BJTs), grown by molecular beam epitaxy, are reported with common emitter current gains ( β's) as large as 400. The factors…”
Get full text

Femtosecond carrier dynamics in low-temperature-grown indium phosphide by Kostoulas, Y., Waxer, L. J., Walmsley, I. A., Wicks, G. W., Fauchet, P. M.

“…Up-conversion luminescence and pump-probe spectroscopy are used to determine the energy distribution and recombination kinetics of photoexcited carriers in…”
Get full text

Electron and hole dynamics in GaN by Ye, Hong, Wicks, G.W., Fauchet, P.M.

“…The hot electron and hot hole dynamics have been studied in n-type and p-type GaN films grown by molecular beam epitaxy on sapphire. A novel non-degenerate…”
Get full text

A study of cracking in GaN grown on silicon by molecular beam epitaxy by JOTHILINGAM, R, KOCH, M. W, POSTHILL, J. B, WICKS, G. W

“…It is observed that GaN layers grown on silicon substrates often crack. The crack characteristics in hexagonal GaN films on Si(111) has been characterized…”
Get full text

Selective area growth of GaN using gas source molecular beam epitaxy by Gupta, V K, Averett, K L, Koch, M W, McIntyre, B L, Wicks, G W

“…Ammonia cracking efficiencies on various surfaces were examined. The following is an ordering of surfaces according to their ammonia cracking efficiencies: GaN…”
Get full text

Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy by WICKS, G. W, KOCH, M. W, VARRIANO, J. A, JOHNSON, F. G, WIE, C. R, KIM, H. M, COLOMBO, P

“…We report on a new method for the generation of phosphorus beams in molecular beam epitaxy: the use of a valved, solid cracker source. The valved solid source…”
Get full text

Femtosecond carrier dynamics in low-temperature grown Ga0.51In0.49P by Kostoulas, Y., Ucer, K. B., Wicks, G. W., Fauchet, P. M.

“…Pump-probe spectroscopy is used to determine the dynamics of carriers in thin films of Ga0.51In0.49P grown at temperatures of 500, 300, and 200 °C. The carrier…”
Get full text

Room-temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices by RALSTON, J. D, O'BRIEN, S, WICKS, G. W, EASTMAN, L. F

“…Substantial increases are observed in the energies of room-temperature exciton transitions in GaAs/AlGaAs superlattices which have been partially intermixed…”
Get full text

Spatial modes of a concentric-circle-grating surface-emitting, AlGaAs/GaAs quantum well semiconductor laser by ERDOGAN, T, KING, O, WICKS, G. W, HALL, D. G, DENNIS, C. L, ROOKS, M. J

“…We demonstrate the fabrication and operation of an AlGaAs surface-emitting semiconductor laser, grown by molecular-beam epitaxy, that incorporates a circularly…”
Get full text

Beryllium diffusion in GaAs/AlGaAs single quantum well separate confinement heterostructure laser active regions by Kohnke, G. E., Koch, M. W., Wood, C. E. C., Wicks, G. W.

“…Beryllium (Be) diffusion into the active layers of single quantum well separate confinement heterostructure lasers grown by molecular beam epitaxy is…”
Get full text

Monolithic integration of an (Al)GaAs laser and an intracavity electroabsorption modulator using selective partial interdiffusion by O'BRIEN, S, SHEALY, J. R, WICKS, G. W

“…The monolithic integration of an intracavity modulator with a multiple quantum well (Al)GaAs laser has been accomplished with the use of selective partial…”
Get full text

Raman study of Al0.54In0.46P/GaAs interfaces grown by solid source molecular beam epitaxy by JOHNSON, F. G, WICKS, G. W

“…An Al0.54In0.46P/GaAs superlattice was grown using a new approach to molecular beam epitaxy that employs solid-source valved crackers to supply the As4 and P2…”
Get full text