Search Results - "Wickenhauser, S."

Lenalidomide with or without erythropoietin in transfusion-dependent erythropoiesis-stimulating agent-refractory lower-risk MDS without 5q deletion by Toma, A, Kosmider, O, Chevret, S, Delaunay, J, Stamatoullas, A, Rose, C, Beyne-Rauzy, O, Banos, A, Guerci-Bresler, A, Wickenhauser, S, Caillot, D, Laribi, K, De Renzis, B, Bordessoule, D, Gardin, C, Slama, B, Sanhes, L, Gruson, B, Cony-Makhoul, P, Chouffi, B, Salanoubat, C, Benramdane, R, Legros, L, Wattel, E, Tertian, G, Bouabdallah, K, Guilhot, F, Taksin, A L, Cheze, S, Maloum, K, Nimuboma, S, Soussain, C, Isnard, F, Gyan, E, Petit, R, Lejeune, J, Sardnal, V, Renneville, A, Preudhomme, C, Fontenay, M, Fenaux, P, Dreyfus, F

“…After failure of erythropoiesis-stimulating agents (ESAs), lenalidomide (LEN) yields red blood cell (RBC) transfusion independence (TI) in 20–30% of lower-risk…”
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Data from French named patient program of quizartinib in relapsed/refractory acute myeloid leukemia by Fodil, S., Raffoux, E., Dumas, P. Y., Desbrosses, Y., Larosa, F., Chantepie, S., Larcher, M. V., Mear, J. B., Peterlin, P., Hunault-Berger, M., Hospital, M. A., Morel, V., Lucas, N., Vidal, V., Salanoubat, C., Michel, J., Mediavilla, C., Ojeda-Uribe, M., Alexis, M., Frayfer, J., Carré, M., Maillard, N., Redjoul, R., Banos, A., Detrait, M., Cluzeau, T., Wickenhauser, S., Chaoui, D., Elassy, M., Pigneux, A., Dombret, H., Récher, C., Bertoli, S.

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O-017 A Phase I/II trial of erlotinib (ERLO) in higher-risk MDS after azacitidine (AZA) failure by Thepot, S, Boehrer, S, Prebet, T, Beyne-Rauzy, O, Wattel, E, Delaunay, J, Raffoux, E, Schmidt, A.L, Wickenhauser, S, Dreyfus, F, Fenaux, P, Adès, L

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A case of rituximab-related urticarial reaction in cutaneous B-cell lymphoma by Rey, J, Wickenhauser, S, Ivanov, V, Coso, D, Gastaut, JA, Bouabdallah, R

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Relaxation mechanism of low temperature SiGe/Si(0 0 1) buffer layers by Vescan, Lili, Wickenhäuser, Susanne

“…A detailed analysis is presented on relaxation mechanism of low temperature Si 1− x Ge x layers deposited on Si(0 0 1) by low pressure chemical vapor…”
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Selectively grown vertical Si MOS transistor with reduced overlap capacitances by Klaes, D, Moers, J, Tönnesmann, A, Wickenhäuser, S, Vescan, L, Marso, M, Grabolla, T, Grimm, M, Lüth, H

“…Vertical p-MOS transistors with channel length of 130 nm have been fabricated using selective epitaxial growth (SEG) to define the channel region. The vertical…”
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Determination of the activation energy for the heterogeneous nucleation of misfit dislocations in Si1−xGex/Si deposited by selective epitaxy by Wickenhäuser, S., Vescan, L., Schmidt, K., Lüth, H.

“…Si 0.84 Ge 0.16 /Si heterostructures with variable finite lateral dimensions (10–300 μm) and different layer thicknesses grown by selective low pressure…”
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Vertical p-MOSFETs with gate oxide deposition before selective epitaxial growth by Moers, J, Klaes, D, Tönnesmann, A, Vescan, L, Wickenhäuser, S, Grabolla, T, Marso, M, Kordoš, P, Lüth, H

“…A novel vertical MOSFET concept using selective epitaxial growth by low pressure chemical vapor deposition is proposed and the first p-channel device…”
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Selective Epitaxial Growth of Si1-xGex for Device Applications and Nanostructures by Vescan, L., Loo, R., Dieker, C., Wickenhauser, S., Hartmann, A., Apetz, R.

“…In this article several features of the selective epitaxial growth of SiGe by LPCVD are discussed, such as the pad size dependence of growth rate, composition…”
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Selectively Grown Vertical Si p-MOS Transistor with Reduced Overlap Capacitances by Klaes, D., Moers, J., Tonnemann, A., Wickenhauser, S., Vescan, L., Marso, M., Kordos, P., Luth, H., Grabolla, T.

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Epitaxial growth by low pressure chemical vapour deposition of Si/sub 1-x/Ge/sub x//Si and applications by Vescan, L., Goryll, M., Grimm, K., Wickenhauser, S., Stoica, T.

“…Low pressure chemical vapour deposition of Si and SiGe was investigated for novel devices for microelectronics and optoelectronics. Results on facet formation,…”
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Strain and misfit dislocation density in finite lateral size Si 1− x Ge x films grownby selective epitaxy by Holländer, B., Vescan, L., Mesters, S., Wickenhäuser, S.

“…Strain and misfit dislocation density in small-area Si 1− x Ge x filmsgrown by selective low-pressure chemical vapour deposition on Si (100)have been…”
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Strain and misfit dislocation density in finite lateral size Si1−x Gex films grownby selective epitaxy by Holländer, B., Vescan, L., Mesters, S., Wickenhäuser, S.

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